公开(公告)号：US11626308B2

公开(公告)日：2023-04-11

申请号：US17319146

申请日：2021-05-13

Applicant: ASM IP Holding B.V.

Inventor： Surojit Ganguli ,  Todd Robert Dunn ,  Ankit Kimtee

IPC: H01L21/68 ,  G01N21/03 ,  H01L29/06

Abstract: A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may include: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

公开(公告)号：US20230061477A1

公开(公告)日：2023-03-02

申请号：US17895370

申请日：2022-08-25

Applicant: ASM IP Holding B.V.

Inventor： Thomas Fitzgerald ,  Rohan Rane ,  Jereld Winkler ,  Ankit Kimtee ,  Todd Robert Dunn

IPC: C23C16/458 ,  C23C16/455

Abstract: A reaction chamber may comprise a reaction chamber volume enclosed within the reaction chamber; a susceptor configured to support a substrate disposed in the reaction chamber volume; a reaction space above the susceptor, and a lower chamber space below the susceptor, within the reaction chamber volume; and/or a sealing system causing the reaction space and the lower chamber space to be at least partially fluidly separate. A sealing system may comprise a spacer plate surrounding and coupled to the susceptor; and/or a spring coupled to the spacer plate and the susceptor having a spring bias toward a compressed position or an extended position, such that the spring bias facilitates creation of at least a partial seal between the spacer plate and the susceptor, causing at least partial fluid separation between the reaction space and the lower chamber space as the susceptor moves up and down within the reaction chamber.

公开(公告)号：US20210210373A1

公开(公告)日：2021-07-08

申请号：US17140661

申请日：2021-01-04

Applicant: ASM IP Holding B.V.

Inventor： Govindarajasekhar Singu ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Shankar Swaminathan ,  Bhushan Zope ,  Carl Louis White

IPC: H01L21/687 ,  H01L21/683

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

公开(公告)号：US20150240359A1

公开(公告)日：2015-08-27

申请号：US14188760

申请日：2014-02-25

Applicant: ASM IP Holding B.V.

Inventor： Lucian C. Jdira ,  Herbert Terhorst ,  Michael Halpin ,  Carl White ,  Todd Robert Dunn ,  Eric Shero ,  Melvin Verbass ,  Christopher Wuester ,  Kyle Fondurulia

IPC: C23C16/455 ,  H01L21/02

Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Abstract translation: 用于晶片处理反应器的气体入口系统包括适于连接到晶片处理反应器的气体入口的管状气体歧管管道; 以及包括用于将第一气体输送到管状气体歧管导管中的第一进料和用于将第二气体供给到管状气体歧管导管中的第二进料的气体进料。 每个进料具有在管状气体歧管导管的第一轴向位置处连接到管状气体歧管导管的两个或更多个喷射端口，并且每个气体进料的喷射端口沿管状气体歧管导管的圆周均匀分布 第一个轴向位置。

公开(公告)号：US20250079223A1

公开(公告)日：2025-03-06

申请号：US18817440

申请日：2024-08-28

Applicant: ASM IP Holding B.V.

Inventor： Shubham Garg ,  Hang Zhang ,  Todd Robert Dunn ,  George B. Jackson

IPC: H01L21/683

Abstract: Various embodiments of the present technology may provide a susceptor assembly. The susceptor assembly may include a susceptor plate and a cap disposed on a surface of the susceptor plate. The cap may have electrodes embedded within it. The susceptor plate may have heating elements embedded within it. The cap may be separated from the susceptor plate by an air gap formed by a plurality of dielectric spacers. The plurality of dielectric spacers may be sized for minimal contact on the cap.

公开(公告)号：US20240401190A1

公开(公告)日：2024-12-05

申请号：US18673554

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Do Han Kim ,  Jereld Lee Winkler ,  Amit Mishra ,  Paul Ma ,  Todd Robert Dunn ,  Moataz Bellah Mousa

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

公开(公告)号：US20240191352A1

公开(公告)日：2024-06-13

申请号：US18530321

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Jacqueline Wrench ,  Paul Ma ,  Todd Robert Dunn ,  Jonathan Bakke ,  Eric James Shero ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4485 ,  C23C16/45561

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

公开(公告)号：US20240133033A1

公开(公告)日：2024-04-25

申请号：US18403024

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Jacqueline Wrench ,  Shuaidi Zhang ,  Arjav Prafulkumar Vashi ,  Shubham Garg ,  Todd Robert Dunn ,  Moataz Bellah Mousa ,  Jonathan Bakke ,  Ibrahim Mohamed ,  Paul Ma ,  Bo Wang ,  Eric Shero ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45561 ,  C23C16/52

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

公开(公告)号：US11781221B2

公开(公告)日：2023-10-10

申请号：US16860973

申请日：2020-04-28

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III ,  Todd Robert Dunn

IPC: C23C16/40 ,  C23C16/52 ,  G01F23/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B25/16 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/4408 ,  C23C16/4583 ,  C23C16/45525 ,  C30B25/14 ,  C30B25/165 ,  G01F23/0007

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

公开(公告)号：US20230183863A1

公开(公告)日：2023-06-15

申请号：US18079247

申请日：2022-12-12

Applicant: ASM IP Holding B.V.

Inventor： Shreyans Kedia ,  Dinkar Nandwana ,  Kyle Fondurulia ,  Todd Robert Dunn ,  Jereld Lee Winkler

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45561 ,  C23C16/45565

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold comprising heater blocks with heater elements mounted on a manifold body. Advantageously, the heater blocks are detachably mounted for easy replacement.