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21.发明授权Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor 有权具有吸收器的平面化极紫外光刻印刷机及其制造系统公开(公告)号：US09581889B2
公开(公告)日：2017-02-28
申请号：US14620123
申请日：2015-02-11
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
Abstract translation: 极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的由基板处理平台接近的多个子室，包括：用于形成多层堆叠的第一子室，在超低膨胀基板上方，用于反射极紫外（EUV） 光; 并且形成在多层叠层上方的用于吸收波长13.5nm的EUV光的双层吸收体的第二子室提供小于1.9％的反射率。
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22.发明申请SYSTEM AND METHOD FOR MANUFACTURING PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK 审中-公开用于制造平面超极化层析层析系统和方法公开(公告)号：US20160274454A1
公开(公告)日：2016-09-22
申请号：US15167740
申请日：2016-05-27
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed Foad , Timothy Michaelson
IPC: G03F1/24
CPC classification number: G03F1/24 , G03F7/70958
Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。
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23.发明申请公开(公告)号：US20160011500A1
公开(公告)日：2016-01-14
申请号：US14620123
申请日：2015-02-11
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
Abstract translation: 极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的由基板处理平台接近的多个子室，包括：用于形成多层堆叠的第一子室，在超低膨胀基板上方，用于反射极紫外（EUV） 光; 并且形成在多层叠层上方的用于吸收波长13.5nm的EUV光的双层吸收体的第二子室提供小于1.9％的反射率。
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24.发明申请EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR 审中-公开极致超紫外线掩膜掩模制造系统及其操作方法公开(公告)号：US20140272684A1
公开(公告)日：2014-09-18
申请号：US14139415
申请日：2013-12-23
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Cara Beasley , Majeed Foad
CPC classification number: G03F1/22 , C23C14/50 , C23C16/4583 , G03F7/16 , H01J37/32715 , H01J37/32899 , H01J37/3405 , H01J37/3417 , H01J37/3447
Abstract: A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
Abstract translation: 一种处理系统包括：真空室; 附接在真空室周围的多个处理系统; 以及真空室中的晶片处理系统，用于在多个处理系统之间移动晶片而不退出真空。 一种用于制造极紫外线空白的物理气相沉积系统，包括：包含钼，钼合金或其组合的靶。
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25.发明申请公开(公告)号：US20190130731A1
公开(公告)日：2019-05-02
申请号：US16220351
申请日：2018-12-14
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
IPC: G08B25/00 , G06F17/15 , G08B13/196 , G06F16/44 , G06F16/435 , G06Q50/00 , G06F16/2457 , G06F16/25 , G08B31/00 , G06F16/248
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
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Patent Agency Ranking
26.发明授权公开(公告)号：US10197907B2
公开(公告)日：2019-02-05
申请号：US15438248
申请日：2017-02-21
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
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27.发明授权公开(公告)号：US10012908B2
公开(公告)日：2018-07-03
申请号：US15410048
申请日：2017-01-19
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Vinayak Vishwanath Hassan , Cara Beasley , Majeed A. Foad
IPC: G03F1/24 , G02B1/14 , G03F7/20 , C23C16/44 , H01J37/32 , H01J37/34 , C23C14/06 , C23C14/14 , G21K1/06 , G03F1/48 , G03F1/52 , G02B5/08
CPC classification number: G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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28.发明授权公开(公告)号：US09690016B2
公开(公告)日：2017-06-27
申请号：US14696331
申请日：2015-04-24
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Cara Beasley , Vinayak Vishwanath Hassan , Majeed A. Foad
CPC classification number: G02B5/0891 , C23C14/06 , C23C14/14 , C23C16/24 , C23C16/45525 , G02B5/0833 , G02B5/0875 , G03F7/7015 , G03F7/70316 , G03F7/70958 , G21K1/062 , G21K2201/067 , H05G2/008
Abstract: An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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29.发明申请公开(公告)号：US20170131627A1
公开(公告)日：2017-05-11
申请号：US15405860
申请日：2017-01-13
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed Foad , Cara Beasley , Ralf Hofmann
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
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30.发明授权公开(公告)号：US09612522B2
公开(公告)日：2017-04-04
申请号：US14620114
申请日：2015-02-11
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
CPC classification number: G03F1/24 , C23C14/042 , C23C16/042 , C23C28/00 , C23C28/322 , C23C28/34 , C23C28/42 , C23C28/44 , G03F1/22 , G03F1/54 , G03F7/70033
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
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