摘要:
A metal alkoxide compound represented by the following general formula (1), wherein each of R1 to R8 is independently a hydrogen atom or a methyl group; M is a titanium, a zirconium or a hafnium atom.
摘要:
A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.
摘要:
Provided are a battery state monitoring circuit in which charging of a secondary battery in an over-charge detection state is prevented to improve safety, and a battery device including the battery state monitoring circuit. A circuit for consuming a leakage current is provided in the battery state monitoring circuit to prevent the secondary battery from being charged with the leakage current.
摘要:
To provide a voltage regulator capable of securely being turned off even if the regulator is used under a high temperature and an impedance of an external load is large. A voltage regulator is provided, which includes a voltage divider circuit that can divide a potential difference between an output voltage terminal and a reference terminal, wherein when the voltage divider circuit inputs an on signal, the voltage divider circuit outputs a constant voltage between the output voltage terminal and the reference terminal, and wherein when the voltage divider circuit inputs an OFF signal, the voltage divider circuit can reduce the impedance thereof.
摘要:
A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.
摘要:
A heat-resistant container molding apparatus and method which are compact and inexpensive and can reliably increase the crystallinity, reduce the residual stress in a container filled with a hot content such as thermally sterilized fruit juice, and prevent a thermal deformation with improved container stability at a raised temperature. The apparatus has a receiving and removing unit for receiving primary moldings obtained by blow-molding preforms and for removing final products, a heat treatment section for heating the primary moldings by bringing the primary moldings into contact with the inner wall of a heat treatment mold while pressurizing the interior of the primary moldings within the heat treatment mold, a final molding section for blow molding intermittent moldings into final products within a final blow mold, and a rotary plate, neck support fixing plate and neck support member for conveying the moldings through the receiving and removing unit, heat treatment section and final molding section.
摘要:
The present invention provides a battery state monitoring circuit having a divided battery voltage monitor circuit, and a battery apparatus employing the same. The configuration is adopted in which a divided battery voltage monitor circuit is provided in order to be able to output the divided voltage value of the total voltage of a plurality of secondary batteries. As a result, the number of switches for use in a change-over switch circuit is decreased and a differential amplifier circuit having the high withstanding voltage becomes unnecessary. Thus, it is possible to monitor the battery voltages of the secondary batteries with a simple circuit.
摘要:
A highly integrated light valve is formed with a composite substrate formed of a quartz substrate and a monocrystalline silicon thin film layer bonded to the quartz substrate, in which an X driving circuit and a Y driving circuit are integrated utilizing very large scale integration processing. Driving electrodes are arranged in a matrix format on the composite substrate for providing signals output from the X driving circuit and the Y driving circuit to respective transistors and display pixel electrodes arranged at each intersection of the driving electrodes in the matrix. A control circuit for supplying timing signals to the X driving circuit and the Y driving circuit and a display data generating circuit for generating display data in order to display an image are also integrated on the composite substrate. A light source element driving circuit for driving a light source element is provided thereon for projecting a displayed image. A liquid crystal layer is sealed in a gap between the composite substrate and a second, opposed substrate with a sealing agent. The sealing agent is, for example, a resin which is stiffened by ultraviolet radiation and is supplied along a predetermined seal region. The present invention provides an improved structure for a light valve device having a high reliability, compact size, high pixel density and high resolution.
摘要:
To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
摘要:
A ferroelectric thin-film device comprises: a single crystal substrate; a conductive thin film formed on the single crystal substrate; and an oriented ferroelectric oxide thin film having a perovskite structure formed on the conductive thin film. The oriented ferroelectric thin film comprises a first layer having a composition changing from the interface with the conductive thin film in the thickness direction and a second layer having a constant composition formed on the first layer. The composition of the first layer and the composition of the second layer are substantially the same at the boundary between the first layer and the second layer.