公开(公告)号：US20120114293A1

公开(公告)日：2012-05-10

申请号：US13250019

申请日：2011-09-30

申请人： Joong-Seon Choe ,  Duk Jun Kim ,  Chun Ju Youn ,  Jong-Hoi Kim ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

发明人： Joong-Seon Choe ,  Duk Jun Kim ,  Chun Ju Youn ,  Jong-Hoi Kim ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC分类号： G02B6/036 ,  B05D5/06

CPC分类号： G02B6/32 ,  G02B6/12 ,  G02B6/4214

摘要： The present disclosure relates to a planar optical waveguide element, and more particularly, to an optical waveguide end structure for effective optical signal connection with a light source, a light receiving element, or a different type of optical waveguide element.According to an exemplary embodiment of the present disclosure, there is disclosed an optical waveguide structure, including: a planar optical waveguide including a lower clad, a waveguide core formed on the lower clad, and a clad layer formed on the waveguide core; and an optical lens formed on a surface of the clad layer.One end of the optical waveguide forms an inclined surface having a predetermined inclination angle.

摘要翻译： 本发明涉及一种平面光波导元件，更具体地，涉及一种用于与光源，光接收元件或不同类型的光波导元件的有效光信号连接的光波导端结构。 根据本公开的示例性实施例，公开了一种光波导结构，包括：平面光波导，包括下包层，形成在下包层上的波导芯和形成在波导芯上的覆层; 以及形成在包层的表面上的光学透镜。 光波导的一端形成具有预定倾斜角的倾斜面。

公开(公告)号：US20110135319A1

公开(公告)日：2011-06-09

申请号：US12773573

申请日：2010-05-04

申请人： Chun Ju YOUN ,  Yong-Hwan Kwon ,  Eun Soo Nam ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi

发明人： Chun Ju YOUN ,  Yong-Hwan Kwon ,  Eun Soo Nam ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi

IPC分类号： H04B10/06 ,  H04L27/06

CPC分类号： H04J14/00 ,  H04B10/6971 ,  H04L27/2096 ,  H04L27/2649 ,  H04L27/2697 ,  H04L2025/03375

摘要： Provided is an optical OFDM receiver. The optical OFDM receiver receives an optical signal dependent on the nonlinearity of a transmitter. The optical OFDM receives includes an optical down converter, a nonlinearity compensator, and an OFDM demodulator. The optical down converter converts the optical signal into an electrical signal. The nonlinearity compensator filters the electrical signal, for compensating distortion which is added to the optical signal when the transmitter performs optical modulation. The OFDM demodulator demodulates the distortion-compensated electrical signal in an OFDM scheme.

摘要翻译： 提供了一种光学OFDM接收机。 光OFDM接收机根据发射机的非线性接收光信号。 光OFDM接收包括光下变频器，非线性补偿器和OFDM解调器。 光学下变频器将光信号转换成电信号。 非线性补偿器对电信号进行滤波，用于补偿当发射机执行光调制时加到光信号上的失真。 OFDM解调器以OFDM方案解调失真补偿电信号。

公开(公告)号：US20110096855A1

公开(公告)日：2011-04-28

申请号：US12772350

申请日：2010-05-03

申请人： Chun Ju YOUN ,  Yong-Hwan Kwon ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Kyoungwoo Heo ,  Eun Soo Nam

发明人： Chun Ju YOUN ,  Yong-Hwan Kwon ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Kyoungwoo Heo ,  Eun Soo Nam

IPC分类号： H04L27/28 ,  H04L1/02 ,  H04L27/00

CPC分类号： H04L25/0226 ,  H04B10/532 ,  H04B10/548 ,  H04J14/06 ,  H04L27/2613

摘要： Provided is a polarization division multiplexed optical OFDM transmitter. The polarization division multiplexed optical OFDM transmitter includes a data demultiplexer, a training symbol generation unit and an optical up-converter and polarization division multiplexing unit. The data demultiplexer divides a transmission signal into a plurality of groups. The training symbol generation unit allocates a plurality of training symbols for each OFDM data which is included in the respective multiplexed groups, and allocates repetitive data in a time domain for the respective training symbols for data of 0 to periodically appear for the respective training symbols in a frequency domain. The optical up-converter and polarization division multiplexing unit performs optical frequency band conversion and polarization division multiplexing on an output of the training symbol generation unit to output a polarization division multiplexed optical OFDM signal corresponding to a plurality of polarization components.

摘要翻译： 提供了一种偏振分复用光OFDM传输器。 偏振分复用光OFDM传输器包括数据解复用器，训练符号生成单元和光上变频器和偏振分割复用单元。 数据解复用器将发送信号分成多个组。 训练符号生成单元为包含在各个多路复用组中的每个OFDM数据分配多个训练符号，并且在时域中分配针对各个训练符号的各个训练符号的重复数据，以针对各个训练符号周期性出现 频域。 光学上变频器和偏振分光复用单元在训练符号生成单元的输出上执行光频带转换和偏振分割复用，以输出对应于多个偏振分量的偏振复用光OFDM信号。

公开(公告)号：US08586462B2

公开(公告)日：2013-11-19

申请号：US13307069

申请日：2011-11-30

申请人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L29/808 ,  H01L21/283

CPC分类号： H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

摘要： Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

摘要翻译： 公开了一种制造场效晶体管的方法。 所公开的方法包括：提供半导体衬底; 在半导体衬底的一侧上形成源极欧姆金属层; 在所述半导体衬底的另一侧上形成漏极欧姆金属层; 在所述源欧姆金属层和所述漏极欧姆金属层之间形成栅电极，在所述半导体衬底的上部; 在包括源欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上形成绝缘膜; 以及在绝缘膜的上部形成多个场电极，其中各个场电极下方的绝缘膜具有不同的厚度。

公开(公告)号：US20110133843A1

公开(公告)日：2011-06-09

申请号：US12960153

申请日：2010-12-03

申请人： Seong-Il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Seong-Il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H03F3/68

CPC分类号： H03F3/245 ,  H03F1/0261 ,  H03F1/52 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451

摘要： Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.

摘要翻译： 提供了一种功率放大器装置。 功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传递的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器， 多个晶体管。

公开(公告)号：US20110049698A1

公开(公告)日：2011-03-03

申请号：US12764330

申请日：2010-04-21

申请人： Woojin CHANG ,  Soon II Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Woojin CHANG ,  Soon II Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L23/538 ,  H01L23/02 ,  H01L21/50

CPC分类号： H01L23/5389 ,  H01L23/3107 ,  H01L24/83 ,  H01L24/90 ,  H01L25/03 ,  H01L2224/90 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2224/83851 ,  H01L2924/00

摘要： A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

摘要翻译： 提供半导体封装。 半导体封装包括封装体，多个半导体芯片和外部连接端子。 封装体与设置有导电图案和通孔的多个片层叠。 多个半导体芯片被插入到从封装主体的一个表面延伸的插入槽中。 外部连接端子设置在与封装主体的一个表面相对的另一表面上。 这里，多个半导体芯片电连接到外部连接端子。

公开(公告)号：US07855094B2

公开(公告)日：2010-12-21

申请号：US12428575

申请日：2009-04-23

申请人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

摘要翻译： 一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。 光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。 在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。 隔离区域和化合物半导体层的表面位于同一水平。 隔离区域可以是Fe杂质区域。

公开(公告)号：US07638856B2

公开(公告)日：2009-12-29

申请号：US11872137

申请日：2007-10-15

申请人： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

IPC分类号： H01L29/00

CPC分类号： H01L31/18 ,  B82Y20/00 ,  G02F1/017

摘要： Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

摘要翻译： 提供了一种光电（OE）发射器集成电路（IC）及其使用选择性生长工艺制造它的方法。 在OE发射机IC中，包括双异质结双极晶体管（DHBT）的驱动电路并放大接收的电信号以驱动电吸收（EA）调制器，并且具有多量子阱（MQW）吸收层的EA调制器是 在半绝缘基板上集成为单芯片。 EA调制器的MQW吸收层和DHBT的MQW插入层使用选择性MOCVD生长工艺彼此形成为不同的厚度。

公开(公告)号：US20050170549A1

公开(公告)日：2005-08-04

申请号：US11012699

申请日：2004-12-16

申请人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

发明人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

IPC分类号： H01L21/331 ,  H01L31/109 ,  H01L31/11 ,  H01L21/00 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L31/109 ,  H01L31/1105

摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

摘要翻译： 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。

公开(公告)号：US08304859B2

公开(公告)日：2012-11-06

申请号：US12847174

申请日：2010-07-30

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L21/02 ,  H01L27/14

CPC分类号： H01L25/167 ,  G02B6/124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.

摘要翻译： 提供了一种光互连装置。 光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出​​光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。