公开(公告)号：US06991999B2

公开(公告)日：2006-01-31

申请号：US09948461

申请日：2001-09-07

申请人： Li Fu ,  Shulin Wang ,  Luo Lee ,  Steven A. Chen ,  Errol Sanchez

发明人： Li Fu ,  Shulin Wang ,  Luo Lee ,  Steven A. Chen ,  Errol Sanchez

IPC分类号： H01L29/04

CPC分类号： H01L21/28035 ,  H01L29/4925 ,  Y10S438/969

摘要： A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

公开(公告)号：US20050255714A1

公开(公告)日：2005-11-17

申请号：US11152501

申请日：2005-06-14

申请人： R. Iyer ,  Sean Seutter ,  Sanjeev Tandon ,  Errol Sanchez ,  Shulin Wang

发明人： R. Iyer ,  Sean Seutter ,  Sanjeev Tandon ,  Errol Sanchez ,  Shulin Wang

IPC分类号： C23C16/34 ,  H01L21/31 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R′2)—Si(R′2)—NR2 (amino(di)silanes), R3—Si—N═N═N (silyl azides), R′3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

摘要翻译： 本发明的实施方案通常提供一种沉积含有硅（Si）和氮（N）的膜的方法。 在一个实施例中，该方法包括将设置在处理室中的基板加热至低于约650摄氏度的温度，使含氮气体流入处理室，使含硅气体流入处理室，并将 衬底上的含SiN层。 含硅气体是被鉴定为NR 2 -Si（R'2）-Si（R'2）-Si（R'2）-Si ）-NR 2（氨基（二）硅烷），R 3 -Si-NNN（甲硅烷基叠氮化物），R'3 -Si- NR-NR 2（甲硅烷基肼）或1,3,4,5,7,8-六甲基四硅氮烷，其中R和R'包含至少一个选自以下的官能团：卤素， 具有一个或多个双键的有机基团，具有一个或多个三键的有机基团，脂肪族烷基，环状烷基，芳族基团，有机硅基团，烷基氨基或含有N或Si的环状基团。

公开(公告)号：US09570328B2

公开(公告)日：2017-02-14

申请号：US13155943

申请日：2011-06-08

申请人： Kailash Patalay ,  Errol Sanchez

发明人： Kailash Patalay ,  Errol Sanchez

IPC分类号： F24J3/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67115 ,  H01L21/68735 ,  H01L21/68742

摘要： Apparatus for use with multi-zonal heating sources are provided. In some embodiments, a substrate support may have a pocket disposed in a surface of the substrate support and a lip disposed about the pocket to receive an edge of a substrate and to support the substrate over the pocket such that a gap is defined between a pocket surface and a backside surface of the substrate when the substrate is disposed on the lip; a plurality of features to operate in combination with a plurality of heating zones provided by a multi-zonal heating source to provide a desired temperature profile on a frontside surface of a substrate when the substrate is disposed on the lip, and wherein the plurality of features are alternatingly disposed above and below a baseline surface profile of the pocket surface in a radial direction from a central axis of the substrate support.

摘要翻译： 提供了用于多区域加热源的设备。 在一些实施例中，衬底支撑件可以具有设置在衬底支撑件的表面中的口袋和设置在口袋周围的唇缘，以容纳衬底的边缘并且将衬底支撑在口袋上，使得在口袋 当衬底设置在唇缘上时，衬底的表面和背面; 多个特征，其与由多区域加热源提供的多个加热区组合操作，以在基板设置在唇缘上时在基板的前侧表面上提供期望的温度分布，并且其中多个特征 交替地设置在从衬底支撑件的中心轴线的径向方向上的袋表面的基线表面轮廓之上和之下。

公开(公告)号：US07737007B2

公开(公告)日：2010-06-15

申请号：US12201681

申请日：2008-08-29

申请人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

发明人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

摘要翻译： 在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体， 和氢气以在其上沉积第一含硅层。 第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被​​蚀刻掉在衬底的电介质材料的表面上。 随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

公开(公告)号：US07732269B2

公开(公告)日：2010-06-08

申请号：US11742932

申请日：2007-05-01

申请人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

发明人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.

摘要翻译： 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

公开(公告)号：US07439142B2

公开(公告)日：2008-10-21

申请号：US11539775

申请日：2006-10-09

申请人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

发明人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

IPC分类号： H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7848

摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

摘要翻译： 在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体， 和氢气以在其上沉积第一含硅层。 第一含硅层可以被选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被​​蚀刻掉在衬底的电介质材料的表面上。 随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

公开(公告)号：US07838431B2

公开(公告)日：2010-11-23

申请号：US12143606

申请日：2008-06-20

申请人： Errol Sanchez

发明人： Errol Sanchez

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  B23K26/1224 ,  H01L21/3221 ,  H01L21/67115

摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate having at least one of a defect or a contaminant disposed on or near a surface of the substrate; and selectively annealing a portion of the substrate with a laser beam in the presence of a process gas comprising hydrogen. The laser beam may be moved over the substrate or continuously, or in a stepwise fashion. The laser beam may be applied in a continuous wave or pulsed mode. The process gas may further comprise an inert gas, such as, at least one of helium, argon, or nitrogen. A layer of material may be subsequently deposited atop the annealed substrate.

摘要翻译： 本文提供了用于处理衬底的方法和设备。 在一些实施例中，处理衬底的方法可以包括提供具有设置在衬底的表面上或附近的缺陷或污染物中的至少一种的衬底; 以及在包含氢气的工艺气体存在下用激光束选择性地退火所述衬底的一部分。 激光束可以在衬底上或连续地或以逐步的方式移动。 可以以连续波或脉冲模式施加激光束。 工艺气体还可包括惰性气体，例如氦气，氩气或氮气中的至少一种气体。 随后可以将一层材料沉积在退火的衬底上。

公开(公告)号：US20090011578A1

公开(公告)日：2009-01-08

申请号：US12201681

申请日：2008-08-29

申请人： ARKADII V. SAMOILOV ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

发明人： ARKADII V. SAMOILOV ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

IPC分类号： H01L21/203

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

摘要翻译： 在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体， 和氢气以在其上沉积第一含硅层。 第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被​​蚀刻掉在衬底的电介质材料的表面上。 随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

公开(公告)号：US20070256627A1

公开(公告)日：2007-11-08

申请号：US11742932

申请日：2007-05-01

申请人： YIHWAN KIM ,  Majeed Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

发明人： YIHWAN KIM ,  Majeed Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

IPC分类号： C30B23/00 ,  C23C16/00 ,  B05D3/02 ,  C30B25/00

CPC分类号： H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.

摘要翻译： 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

公开(公告)号：US20050079692A1

公开(公告)日：2005-04-14

申请号：US10845984

申请日：2004-05-14

申请人： Arkadii Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas Dalida

发明人： Arkadii Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas Dalida

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/36

CPC分类号： H01L21/823814 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7848

摘要： In one embodiment, a method for fabricating a silicon-based device on a substrate surface is provided which includes depositing a first silicon-containing layer by exposing the substrate surface to a first process gas comprising Cl2SiH2, a germanium source, a first etchant and a carrier gas and depositing a second silicon-containing layer by exposing the first silicon-containing layer to a second process gas comprising SiH4 and a second etchant. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing a first silicon-containing layer on the substrate surface with a first germanium concentration of about 15 at % or more. The method further provides depositing on the first silicon-containing layer a second silicon-containing layer wherein a second germanium concentration of about 15 at % or less, exposing the substrate surface to air to form a native oxide layer, removing the native oxide layer to expose the second silicon-containing layer, and depositing a third silicon-containing layer on the second silicon-containing layer. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing epitaxially a first silicon-containing layer on the substrate surface with a first lattice strain, and depositing epitaxially on the first silicon-containing layer a second silicon-containing layer with a second lattice strain greater than the first lattice strain.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上制造硅基器件的方法，其包括通过将衬底表面暴露于包括Cl 2 SiH 2，锗源，第一蚀刻剂和第二蚀刻剂的第一工艺气体来沉积第一含硅层 载气并通过将第一含硅层暴露于包含SiH 4和第二蚀刻剂的第二工艺气体而沉积第二含硅层。 在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以约15at％或更多的第一锗浓度在衬底表面上沉积第一含硅层。 该方法进一步提供了在第一含硅层上沉积第二含硅层，其中第二锗浓度为约15原子％或更低，将基底表面暴露于空气中以形成天然氧化物层，将天然氧化物层去除 暴露第二含硅层，并在第二含硅层上沉积第三含硅层。 在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以第一晶格应变在衬底表面上外延沉积第一含硅层，并且在第一含硅层上外延沉积 第二含硅层具有大于第一晶格应变的第二晶格应变。