Method of manufacturing a cloverleaf microgyroscope and cloverleaf microgyroscope
    21.
    发明授权
    Method of manufacturing a cloverleaf microgyroscope and cloverleaf microgyroscope 失效
    三叶草微镜和三叶草微陀螺的制作方法

    公开(公告)号:US07202100B1

    公开(公告)日:2007-04-10

    申请号:US10933853

    申请日:2004-09-03

    IPC分类号: H01L21/00

    CPC分类号: G01C19/5719

    摘要: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, attaching the resonator wafer to a base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer. The present invention relates further to a gyroscope containing an integrated post with on or off-chip electronics.

    摘要翻译: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺仪的方法,该方法包括:将后晶片连接到共振器晶片,从后晶片形成底柱,附着于谐振晶片,将谐振晶片连接到基片 其中所述底柱装配到所述基底晶片中的柱孔中,从所述谐振器晶片形成顶部柱,其中所述底部和顶部柱围绕相同的轴线对称地形成,并且将盖子晶片附接在所述基底晶片的顶部上。 本发明还涉及一种包含具有片上或片外电子器件的集成柱的陀螺仪。

    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
    22.
    发明授权
    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects 失效
    具有晶片间互连的三叶草微型陀螺仪和具有贯穿晶片互连的三叶草微型制造器的制造方法

    公开(公告)号:US07015060B1

    公开(公告)日:2006-03-21

    申请号:US11008721

    申请日:2004-12-08

    IPC分类号: H01L21/00

    CPC分类号: G01C19/5719 H01L21/76898

    摘要: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

    摘要翻译: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法,其特征在于,包括:将后晶片连接到谐振晶片,从后晶片形成底柱,附着于谐振晶片,制备带晶圆的基晶片 互连,将谐振器晶片连接到基底晶片,其中底部支架装配到基底晶片中的柱孔中,从谐振器晶片形成顶部柱,其中底部和顶部柱围绕相同的轴线对称地形成,并且附接 在基底晶片顶部的盖子晶片。

    Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
    23.
    发明授权
    Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same 失效
    单晶,隧道和电容,三轴传感器采用共晶接合及其制作方法

    公开(公告)号:US06835587B2

    公开(公告)日:2004-12-28

    申请号:US10639289

    申请日:2003-08-11

    IPC分类号: H01L2100

    摘要: A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer.

    摘要翻译: 第一轴MEM隧道/电容传感器及其制造方法。 至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被限定在第一基板或晶片上,所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 还限定了至少第三传感器的谐振器结构,第三传感器在正交于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的灵敏度。 至少两个正交布置的传感器的接触结构与第二衬底或晶片上的配合结构一起形成,第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。

    Supercapacitor cells and micro-supercapacitors
    24.
    发明授权
    Supercapacitor cells and micro-supercapacitors 有权
    超级电容器和微型超级电容器

    公开(公告)号:US08503161B1

    公开(公告)日:2013-08-06

    申请号:US13070467

    申请日:2011-03-23

    IPC分类号: H01G9/00 H01G9/08

    摘要: This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.

    摘要翻译: 本发明提供了具有高能量密度和高功率密度的微型超级电容器。 在一些变型中,涂覆有金属氧化物(例如氧化钌)的碳纳米管结构,例如在不含隔板的超级电容器腔中生长。 使用接合工艺将盖结合到腔体以形成气密密封。 根据所公开的方法,这些微超级电容器可以由绝缘体上硅晶片制造。 示例性的微超级电容器是长度为约50-100μm的立方体。 没有分离器可以转换为更高的能量存储容量,并且在超级电容器单元内减少浪费的空间。 在各种实施例中,微超级电容器的能量密度可以超过150J / cm 3,峰值输出功率密度可以在约2-20W / cm 3的范围内。

    Planar RF electromechanical switch
    25.
    发明授权
    Planar RF electromechanical switch 有权
    平面RF机电开关

    公开(公告)号:US08485417B1

    公开(公告)日:2013-07-16

    申请号:US13470082

    申请日:2012-05-11

    IPC分类号: B23K31/00 B23K31/02

    CPC分类号: H01H55/00

    摘要: A micromachined switch is provided including a base substrate, a bond pad on the base substrate, a cantilever arm connected to the bond pad, the cantilever arm having a conductive via from the bond pad, a first actuation electrode on the base substrate, and a second actuation electrode on the cantilever arm connected to the bond pad by way of the conductive via, positioned such that an actuation voltage applied between the first actuation electrode and the second actuation electrode will deform the cantilever arm, wherein the first actuation electrode is facing a side of the cantilever arm opposite the second actuation electrode.

    摘要翻译: 提供一种微加工开关,包括基底基板,基底基板上的接合焊盘,连接到接合焊盘的悬臂,悬臂臂具有来自接合焊盘的导电通孔,基底基板上的第一致动电极和 悬臂上的第二致动电极通过导电通孔连接到接合焊盘,定位成使得施加在第一致动电极和第二致动电极之间的致动电压将使悬臂变形,其中第一致动电极面向 悬臂的一侧与第二致动电极相对。

    Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same
    26.
    发明授权
    Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same 有权
    具有频率选择性时隙的多频带子波长IR检测器及其制造方法

    公开(公告)号:US07923689B2

    公开(公告)日:2011-04-12

    申请号:US12433631

    申请日:2009-04-30

    IPC分类号: G01J5/02

    摘要: In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

    摘要翻译: 在一个实施例中,多频带红外(IR)检测器阵列包括具有多个周期性谐振结构的金属表面,其被配置为在不同频带中共振地传输电磁能。 阵列上的多个像素包括至少对应于第一和第二波长的第一和第二谐振结构。 对于每个像素,第一和第二谐振结构具有相关联的检测器,并且被布置成使得第一波长的电磁能量基本上全部通过第一谐振结构到第一检测器上,并且基本上所有的第二电磁能量 波长通过第二谐振结构到第二检测器。 在一个实施例中,谐振结构是孔或狭缝,并且IR检测器可以是被配置为吸收8-12μm带中的辐射的巯基碲化物。 可以通过适当的缩放来实现超过两个波长的检测。 还公开了形成IR检测器阵列的方法。

    Device having integrated MEMS switches and filters
    27.
    发明授权
    Device having integrated MEMS switches and filters 有权
    集成了MEMS开关和滤波器的器件

    公开(公告)号:US07830227B1

    公开(公告)日:2010-11-09

    申请号:US12233232

    申请日:2008-09-18

    IPC分类号: H03H9/54 H03H9/70 H01P1/10

    摘要: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

    摘要翻译: 一种用于制造集成的MEMS开关和滤波器的方法包括在硅衬底中形成空腔,将石英衬底上的第一图案金属化以形成第一开关和滤波器元件,将石英衬底接合到硅衬底,使得第一开关和滤波器元件 位于一个空腔内,使石英衬底变薄,在石英衬底中形成导电通孔,在石英衬底的第二表面上金属化第二图案以形成第二开关和滤光元件,蚀刻石英衬底以将MEMS开关与过滤器分离 在主机基板上形成突起,在主机基板上形成金属化第三金属图案以形成金属锚和第三开关元件,将主机基板上的金属锚固件压接到第二开关和滤波元件,形成信号线以集成MEMS开关 并过滤并去除硅衬底。

    Method of fabricating an ultra thin quartz resonator component
    29.
    发明授权
    Method of fabricating an ultra thin quartz resonator component 有权
    制造超薄石英谐振器元件的方法

    公开(公告)号:US07802356B1

    公开(公告)日:2010-09-28

    申请号:US12034852

    申请日:2008-02-21

    IPC分类号: H04R31/00

    CPC分类号: H03H9/172 H03H3/04

    摘要: A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

    摘要翻译: 在本申请中提出了一种用于制造谐振器的方法。 该方法包括提供处理衬底,提供主体衬底,提供包括与第二表面相对的第一表面的石英衬底,将中介层膜施加到石英衬底的第一表面,将石英衬底接合到处理衬底,其中插入膜 设置在石英基板和手柄基板之间,使石英基板的第二表面变薄,去除一部分键合的石英基板以暴露中间层膜的一部分,将石英基板接合到主基板,并且移除手柄 基板和内插膜,从而释放石英基板。

    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
    30.
    发明授权
    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects 失效
    具有晶片间互连的三叶草微型陀螺仪和具有贯穿晶片互连的三叶草微型制造器的制造方法

    公开(公告)号:US07671431B1

    公开(公告)日:2010-03-02

    申请号:US11330376

    申请日:2006-01-10

    IPC分类号: H01L23/00

    CPC分类号: G01C19/5719 H01L21/76898

    摘要: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

    摘要翻译: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法,其特征在于,包括:将后晶片连接到谐振晶片,从后晶片形成底柱,附着于谐振晶片,制备带晶圆的基晶片 互连,将谐振器晶片连接到基底晶片,其中底部支架装配到基底晶片中的柱孔中,从谐振器晶片形成顶部柱,其中底部和顶部柱围绕相同的轴线对称地形成,并且附接 在基底晶片顶部的盖子晶片。