Method of making an electrostatic chuck with reduced plasma penetration and arcing
    21.
    发明授权
    Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
    制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法

    公开(公告)号:US08108981B2

    公开(公告)日:2012-02-07

    申请号:US11888327

    申请日:2007-07-31

    IPC分类号: B23P17/00

    摘要: A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

    摘要翻译: 一种制造静电卡盘的方法,包括将板定位在主体中的通道中以形成气室,并将电介质部件插入板中的开口中,其中介电部件限定了来自气室的通道的一部分。 此后,沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中,抛光工艺形成通过介电层的开口,以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中,电介质层的至少一部分在绝缘元件附近是多孔的,使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中,穿过电介质层形成孔,并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

    PLASMA SOURCE DESIGN
    22.
    发明申请
    PLASMA SOURCE DESIGN 有权
    等离子体源设计

    公开(公告)号:US20110115378A1

    公开(公告)日:2011-05-19

    申请号:US12905940

    申请日:2010-10-15

    IPC分类号: H05B31/26

    CPC分类号: H01J37/3211 H01J37/32357

    摘要: Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

    摘要翻译: 本发明的实施例通常提供一种等离子体源装置及其使用方法,其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子,所述等离子体产生区域围绕磁芯元件对称地定位 资源。 通常,等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。 通常,等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积,蚀刻和/或清洁过程。

    PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    24.
    发明申请
    PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
    电介质加工室

    公开(公告)号:US20070289534A1

    公开(公告)日:2007-12-20

    申请号:US11754858

    申请日:2007-05-29

    IPC分类号: C23C16/452

    摘要: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

    摘要翻译: 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室,用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统,其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括辐射加热系统以加热包括至少一个光源的基板,其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。 该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。 还可以包括原位等离子体产生系统,以从沉积室中提供的电介质前体在沉积室中产生等离子体。

    PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    25.
    发明申请
    PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
    电介质加工室

    公开(公告)号:US20070277734A1

    公开(公告)日:2007-12-06

    申请号:US11754916

    申请日:2007-05-29

    IPC分类号: C23C16/00

    摘要: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

    摘要翻译: 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室,用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统,其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统,其包括位于衬底台上方的双通道喷头。 喷头可以具有面板,其具有第一组开口,反应性自由基前体通过该开口进入沉积室,以及第二组开口,第二介电体前体通过该开口进入沉积室。 还可以包括原位等离子体产生系统,以从沉积室中提供的电介质前体在沉积室中产生等离子体。

    Electrochemical processing cell
    26.
    发明授权
    Electrochemical processing cell 失效
    电化学处理池

    公开(公告)号:US07247222B2

    公开(公告)日:2007-07-24

    申请号:US10268284

    申请日:2002-10-09

    IPC分类号: C25B9/00 C25C7/04 C25B9/08

    摘要: Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

    摘要翻译: 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池,流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极,阳极具有穿过其形成的多个平行通道,以及构造成容纳阳极的基座构件,底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件,其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上,所述膜支撑组件具有形成在其中的多个通道和孔。

    Apparatus for electroless deposition of metals onto semiconductor substrates
    27.
    发明申请
    Apparatus for electroless deposition of metals onto semiconductor substrates 有权
    用于将金属无电沉积到半导体衬底上的装置

    公开(公告)号:US20050260345A1

    公开(公告)日:2005-11-24

    申请号:US11175251

    申请日:2005-07-06

    摘要: An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

    摘要翻译: 提供无电沉积系统和无电沉积站。 该系统包括处理主机,位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境控制的处理外壳,被配置为清洁和激活基板的表面的第一处理站,被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭 第一和第二处理站之间的基板。 无电沉积站还包括各种流体输送和基板温度控制装置,以执行无污染和均匀的无电沉积工艺。

    Electroless plating system
    29.
    发明授权
    Electroless plating system 有权
    无电镀系统

    公开(公告)号:US06824612B2

    公开(公告)日:2004-11-30

    申请号:US10036321

    申请日:2001-12-26

    IPC分类号: B05C502

    摘要: A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

    摘要翻译: 一种用于电镀基板的方法和装置,其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。 提供与中心基板传送外壳连通的基板激活室,并且可由至少一个基板传送机器人访问。 提供与中心基板传送外壳连通的基板电镀室,并且可由至少一个基板传送机器人访问。 提供与中央基板传送外壳连通的基板旋转漂洗干燥室,并且可由至少一个基板传送机器人访问,并且提供与中央基板传送外壳连通的退火室,并且可由至少一个 基板传送机器人。 还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

    Method and apparatus for plasma processing
    30.
    发明授权
    Method and apparatus for plasma processing 失效
    等离子体处理方法和装置

    公开(公告)号:US06592709B1

    公开(公告)日:2003-07-15

    申请号:US09545744

    申请日:2000-04-05

    申请人: Dmitry Lubomirsky

    发明人: Dmitry Lubomirsky

    IPC分类号: H05H100

    摘要: The present invention provides a method and apparatus for processing substrates. A processing system includes a chamber having a top mounted pumping assembly. The chamber comprises a ceiling disposed on a chamber body and having an opening formed therein. The pumping assembly is connected to the ceiling and registered with the opening. The pumping assembly operates to evacuate the chamber to a desired pressure. One or more gases are supplied to the chamber via a gas distribution chamber and are exhausted from the chamber via the opening formed in the ceiling.

    摘要翻译: 本发明提供一种处理衬底的方法和装置。 处理系统包括具有顶部安装的泵送组件的室。 该室包括设置在室主体上并具有形成在其中的开口的顶棚。 泵送组件连接到天花板并与开口对齐。 泵送组件操作以将室抽空到期望的压力。 一个或多个气体经由气体分配室供应到室,并且经由形成在天花板中的开口从室排出。