公开(公告)号：US09537458B2

公开(公告)日：2017-01-03

申请号：US14666163

申请日：2015-03-23

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sang Heung Lee ,  Dong Min Kang ,  Seong Il Kim ,  Ho Kyun Ahn ,  Hyung Sup Yoon ,  Jong Won Lim ,  Chull Won Ju

IPC: H03F3/08 ,  H03G1/00 ,  H03F1/08 ,  H03G3/12

CPC classification number: H03G1/0088 ,  H03F1/083 ,  H03F3/08 ,  H03F2200/153 ,  H03G3/12

Abstract: Provided herein is a feedback amplifier including an amplifier circuit configured to amplify an input signal input from an input terminal and output the amplified input signal to an output terminal; a feedback circuit configured to apply a feedback resistance value to a signal output to the output terminal, and to control a gain of the amplifier circuit by adjusting the input signal by a bias voltage applied with a feedback resistance value determined; a packet signal sensor configured to generate a fixed resistance control signal for controlling a fixed resistance value included in the feedback resistance value through a comparison between the output from the output terminal with a minimum signal level; and a fixed resistance controller configured to control the fixed resistance value included in the feedback resistance value in response to the fixed resistance control signal.

Abstract translation: 本文提供了一种反馈放大器，包括：放大器电路，被配置为放大从输入端输入的输入信号，并将放大的输入信号输出到输出端; 反馈电路，被配置为向输出端子输出的信号施加反馈电阻值，并且通过利用所确定的反馈电阻值施加的偏置电压来调节所述输入信号来控制所述放大器电路的增益; 分组信号传感器，被配置为通过比较来自所述输出端子的输出与最小信号电平之间的比较，产生用于控制所述反馈电阻值中包括的固定电阻值的固定电阻控制信号; 以及固定电阻控制器，其被配置为响应于所述固定电阻控制信号来控制包括在所述反馈电阻值中的所述固定电阻值。

公开(公告)号：US09166011B2

公开(公告)日：2015-10-20

申请号：US14328247

申请日：2014-07-10

Applicant: Electronics and Telecommunications Research Institute

Inventor： Seong Il Kim ,  Dong Min Kang ,  Sang Heung Lee ,  Ho Kyun Ahn ,  Hyung Sup Yoon ,  Byoung Gue Min ,  Jong Won Lim

IPC: H01L21/338 ,  H01L29/423 ,  H01L29/778 ,  H01L21/283 ,  H01L21/28

CPC classification number: H01L29/42312 ,  H01L21/28114 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/42316 ,  H01L29/66863 ,  H01L29/778 ,  H01L29/812

Abstract: Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 μm or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device.

Abstract translation: 公开了一种具有稳定的栅极结构的半导体器件及其制造方法，其中通过在栅极头的宽度方向上的栅极头附近还包括多个栅极脚来稳定栅极结构，以作为支撑体 在包括具有0.2μm或更小的长度的精细栅极脚的栅极结构中，并且栅极头具有预定尺寸。 因此，可以防止半导体器件的栅电极塌陷，并且在半导体器件的处理期间或之后提高半导体器件的可靠性。

公开(公告)号：US09012920B2

公开(公告)日：2015-04-21

申请号：US13867328

申请日：2013-04-22

Applicant: Electronics and Telecommunications Research Institute

Inventor： Chull Won Ju ,  Hae Cheon Kim ,  Hyung Sup Yoon ,  Woo Jin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Jong-Won Lim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong Min Lee ,  Eun Soo Nam

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L23/00

CPC classification number: H01L29/2003 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L29/41758 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/06135 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00014

Abstract: Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride compound element formed by being grown on a wafer; a contact pad including a source, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the nitride gallium compound element is flip-chip bonded; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are flip-chip bonded. By this configuration, it is possible to reduce the process costs by forming the bump on the substrate based on the wafer level, rapidly emit the heat generated from an AlGaN HEMT device by forming the sub source contact pad and the sub drain contact pad of the substrate in the active region, and efficiently emit the heat generated from the AlGaN HEMT device by forming a via hole on the substrate and filling the via hole with the conductive metal.

Abstract translation: 公开了一种GaN（氮化镓）复合功率半导体器件及其制造方法。 氮化镓化合物功率半导体器件包括：通过在晶片上生长形成的氮化镓复合元素; 包括源极，漏极和与氮化镓复合元件连接的栅极的接触焊盘; 将氮化镓化合物元件倒装芯片接合的模块基板; 形成在所述模块基板上的焊盘; 以及形成在模块基板的焊盘上的凸点，使得接触焊盘和焊盘被倒装芯片接合。 通过这种结构，可以通过基于晶片级在基板上形成凸块来降低处理成本，通过形成子源接触焊盘和子漏极接触焊盘，快速地发射由AlGaN HEMT器件产生的热量 衬底，并且通过在衬底上形成通孔并用导电金属填充通孔，从而有效地发射由AlGaN HEMT器件产生的热量。

公开(公告)号：US08841969B2

公开(公告)日：2014-09-23

申请号：US13670016

申请日：2012-11-06

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang-Heung Lee ,  Seong-Il Kim ,  Dong Min Kang ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Chull Won Ju ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H03G3/12

CPC classification number: H03G1/0082 ,  H03G1/0088 ,  H03G3/3084

Abstract: Disclosed is an automatic gain control feedback amplifier that can arbitrarily control a gain even when a difference in input signal is large. The automatic gain control feedback amplifier includes: an amplification circuit unit configured to amplify voltage input from an input terminal and output the amplified voltage to an output terminal; a feedback circuit unit connected between the input terminal and the output terminal and including a feedback resistor unit of which a total resistance value is determined by one or more control signals and a feedback transistor connected to the feedback resistor unit in parallel; and a bias circuit unit configured to supply predetermined bias voltage to the feedback transistor.

Abstract translation: 公开了一种自动增益控制反馈放大器，其即使当输入信号的差异大时也可以任意地控制增益。 自动增益控制反馈放大器包括：放大电路单元，被配置为放大从输入端输入的电压，并将放大的电压输出到输出端; 连接在输入端子和输出端子之间的反馈电路单元，包括反馈电阻器单元，其总电阻值由一个或多个控制信号确定，反馈晶体管并联连接到反馈电阻器单元; 以及偏置电路单元，被配置为向所述反馈晶体管提供预定的偏置电压。