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    Dopant precursors for mono-layer doping
    25.
    发明授权
    Dopant precursors for mono-layer doping 有权

    公开(公告)号：US09929014B2

    公开(公告)日：2018-03-27

    申请号：US15037940

    申请日：2014-11-22

    Applicant: Entegris, Inc.

    Inventor： Thomas M. Cameron ,  Emanuel I. Cooper ,  Sung Han

    IPC: H01L21/22 ,  H01L21/225 ,  H01L21/228

    CPC classification number: H01L21/2225 ,  H01L21/2254 ,  H01L21/228

    Abstract: A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate. The film of dopant material is applied from a dopant composition selected from among: (i) dopant compositions comprising an aqueous or glycol solution comprising an inorganic dopant compound; (ii) dopant compositions comprising an arsenic, phosphorus, boron, or antimony compound in which ligands or moieties coordinated to an arsenic, phosphorus, boron, or antimony central atom have coordination bond energies that are lower than those associated with coordinating bonds of said central atom to oxygen or carbon; (iii) dopant compositions comprising a coordinated moiety that selectively and covalently bonds to the substrate; (iv) dopant compositions comprising a compound that undergoes hydrolysis and alcoholysis to covalently bond a dopant functionality to the substrate in said film of dopant material; (v) dopant compositions comprising precursor vapor of an organodopant compound; (vi) dopant compositions interactive with a surface functionality of the substrate to bind the dopant composition to the substrate, wherein the substrate comprises a silicon surface comprising said surface functionality; (vii) dopant compositions interactive with the substrate to covalently bond with a pretreated and/or modified silicon surface thereof; and (viii) dopant compositions interactive with the substrate to bond with the substrate on a silicon surface thereof that has been modified by a treatment comprising at least one of: (A) contacting the silicon surface with a chemical solution; (B) exposing the silicon surface to plasma; and (C) exposing the silicon surface to ultraviolet radiation.

    Ruthenium etching composition and method
    29.
    发明授权
    Ruthenium etching composition and method 有权

    公开(公告)号：US11346008B2

    公开(公告)日：2022-05-31

    申请号：US16692834

    申请日：2019-11-22

    Applicant: ENTEGRIS, INC.

    Inventor： Steven Lippy ,  Emanuel I. Cooper

    IPC: C23F1/40 ,  C23F1/30 ,  C23F1/38 ,  C23F1/34 ,  C09K13/04 ,  C09K13/02

    Abstract: The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 Å/min, while minimizing etch rates of dielectrics (

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