公开(公告)号：US20050030003A1

公开(公告)日：2005-02-10

申请号：US10495864

申请日：2003-01-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G01R17/10 ,  G05B20060101 ,  G06F17/00 ,  H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32275 ,  H01J37/32192 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253

Abstract: An equipment status monitoring system and method of operating thereof is described. The equipment status monitoring system includes at least one microwave mirror in a plasma processing chamber forming a multi-modal resonator. A power source is coupled to a mirror and configured to produce an excitation signal extending along an axis generally perpendicular to a substrate. A detector is coupled to a mirror and configured to measure an excitation signal. A control system is connected to the detector that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment.

Abstract translation: 描述了设备状态监视系统及其操作方法。 设备状态监测系统包括形成多模谐振器的等离子体处理室中的至少一个微波反射镜。 电源耦合到反射镜并且被配置为产生沿着大致垂直于衬底的轴延伸的激励信号。 检测器耦合到反射镜并且被配置为测量激励信号。 控制系统连接到检测器，其将测量的激励信号与正常激励信号进行比较，以便确定材料处理设备的状态。

公开(公告)号：US07540305B2

公开(公告)日：2009-06-02

申请号：US11201109

申请日：2005-08-11

Applicant: Eric Strang

Inventor： Eric Strang

IPC: B01F5/06

CPC classification number: C23C16/45512 ,  B01F3/02 ,  B01F5/0256 ,  B01J4/001 ,  B01J19/26 ,  C23C16/455 ,  C23G5/00 ,  Y10T137/87652

Abstract: A chemical processing system includes a mixing chamber coupled to the chemical processing system. A stream of first process gas and a stream of second process gas are introduced into the mixing chamber. The stream of first process gas and the stream of second process gas interact with each other to form a mixed process gas, which is supplied to the substrate for processing thereof. A method of mixing process gas in a mixing chamber of a chemical processing system is provided. The method includes injecting a stream of first process gas and a stream of second process gas into the mixing chamber, causing the streams of the first process gas and the second process gas to interact and mixing the first process gas and the second process gas in the mixing chamber to form a mixed process gas. A mixing system is also provided.

Abstract translation: 化学处理系统包括耦合到化学处理系统的混合室。 将第一工艺气体流和第二工艺气体流引入混合室。 第一工艺气体流和第二工艺气体流彼此相互作用以形成混合工艺气体，其被供应到衬底进行处理。 提供了一种在化学处理系统的混合室中混合处理气体的方法。 该方法包括将第一工艺气体流和第二工艺气体流注入到混合室中，使得第一工艺气体和第二工艺气体的流在第一工艺气体和第二工艺气体之间相互作用并混合 混合室以形成混合工艺气体。 还提供混合系统。

公开(公告)号：US20070192059A1

公开(公告)日：2007-08-16

申请号：US11736789

申请日：2007-04-18

Applicant: Andrej Mitrovic ,  Eric Strang

Inventor： Andrej Mitrovic ,  Eric Strang

IPC: G06F15/00

CPC classification number: G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract translation: 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US07199327B2

公开(公告)日：2007-04-03

申请号：US10512862

申请日：2003-06-27

Applicant: Paul Moroz ,  Eric Strang

Inventor： Paul Moroz ,  Eric Strang

IPC: B23K10/00

CPC classification number: H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/0206

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract translation: 一种用于等离子体处理的电弧抑制系统，其包括耦合到所述等离子体处理系统的至少一个传感器，以及耦合到所述至少一个传感器的控制器。 控制器提供至少一种算法，用于使用从至少一个传感器产生的至少一个信号来确定与衬底接触的等离子体的状态，并控制等离子体处理系统以抑制电弧事件。 当传感器之间的电压差超过目标差异时，等离子体处理系统被确定为容易产生电弧。 在这种情况下，通知操作员，并且可以做出继续处理，修改处理或停止处理的决定。

公开(公告)号：US20060090850A1

公开(公告)日：2006-05-04

申请号：US11233077

申请日：2005-09-23

Applicant: Arthur Laflamme ,  Jay Wallace ,  Eric Strang

Inventor： Arthur Laflamme ,  Jay Wallace ,  Eric Strang

IPC: H01L21/306 ,  C23C16/00 ,  G01L21/30

CPC classification number: H01L21/67069 ,  C23C16/45565

Abstract: A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

Abstract translation: 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。

公开(公告)号：US20060060303A1

公开(公告)日：2006-03-23

申请号：US11236535

申请日：2005-09-28

Applicant: Steven Fink ,  Paul Moroz ,  Eric Strang ,  Andrej Mitrovic

Inventor： Steven Fink ,  Paul Moroz ,  Eric Strang ,  Andrej Mitrovic

IPC: B08B6/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/3244 ,  H01J2237/022

Abstract: A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.

Abstract translation: 等离子体处理系统包括容纳等离子体处理区域的腔室和构造和布置成在处理区域内的腔室内支撑衬底的卡盘。 等离子体处理系统还包括至少一个与室连通的气体注入通道，并且构造成便于通过吹扫气体从腔室中除去颗粒。 在一个实施例中，等离子体处理系统可以包括电极，其被配置为当电极用DC或RF功率偏置时通过静电力吸引或排斥腔室中的颗粒。 一种在等离子体处理系统中处理衬底的方法，包括通过与室连通的至少一个气体注入通道供应净化气体来去除等离子体处理系统的腔室中的颗粒。

公开(公告)号：US20050284370A1

公开(公告)日：2005-12-29

申请号：US10875949

申请日：2004-06-25

Applicant: Eric Strang

Inventor： Eric Strang

IPC: C23C16/00 ,  C23C16/40

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45574

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract translation: 一种用于执行原子层沉积（ALD）的处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为将第一处理气体和第二处理气体供应到处理室的气体注入系统。 气体注入系统被配置为在第一位置和第二位置处将第一处理气体和第二处理气体引入处理室，其中第一处理气体和第二处理气体中的至少一个交替地并且顺序地介于 第一个位置和第二个位置。

公开(公告)号：US20050189069A1

公开(公告)日：2005-09-01

申请号：US11082246

申请日：2005-03-17

Applicant: Audunn Ludviksson ,  Eric Strang ,  Andrej Mitrovic

Inventor： Audunn Ludviksson ,  Eric Strang ,  Andrej Mitrovic

IPC: C23F1/00 ,  H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32871 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J2237/022 ,  H01J2237/028

Abstract: A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.

Abstract translation: 提供了一种与等离子体处理系统一起操作诊断系统的等离子体处理系统和方法。 诊断系统与等离子体处理系统的等离子体处理室通信，并且包括用于检测等离子体处理条件的诊断传感器。 诊断系统被配置为基本上减少诊断传感器的污染。 该方法包括显着减少诊断传感器的污染并检测处理室中的等离子体处理和/或衬底的状况。

公开(公告)号：US20050098106A1

公开(公告)日：2005-05-12

申请号：US10705225

申请日：2003-11-12

Applicant: Steven Fink ,  Eric Strang ,  Michael Landis

Inventor： Steven Fink ,  Eric Strang ,  Michael Landis

IPC: H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32605 ,  H01J37/32009 ,  H01J37/3244

Abstract: An electrode plate, configured to be coupled to an electrode in a plasma processing system, comprises a plurality of gas injection holes configured to receive gas injection devices. The electrode plate comprises three or more mounting holes, wherein the electrode plate is configured to be coupled with an electrode in the plasma processing system by aligning and coupling the three or more mounting holes with three or more mounting screws attached to the electrode.

Abstract translation: 构造成耦合到等离子体处理系统中的电极的电极板包括被配置为接收气体注入装置的多个气体注入孔。 电极板包括三个或更多个安装孔，其中电极板被配置为通过将三个或更多个安装孔与附接到电极的三个或更多个安装螺钉对准并联接在等离子体处理系统中与电极耦合。

公开(公告)号：US20050071037A1

公开(公告)日：2005-03-31

申请号：US10673506

申请日：2003-09-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: H01L20060101 ,  G06F19/00

CPC classification number: G05B19/41885 ,  G05B2219/32364 ,  G05B2219/32385 ,  G05B2219/45031 ,  Y02P90/26 ,  Y02P90/86

Abstract: A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.

Abstract translation: 一种用于分析由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型进行第一原理模拟，以提供第一原理模拟结果; 并且第一原理模拟结果用于确定由半导体处理工具执行的过程中的故障。