公开(公告)号：US08895839B2

公开(公告)日：2014-11-25

申请号：US12864994

申请日：2009-02-02

申请人： Eric Mazur ,  Mark Winkler ,  Brian R. Tull

发明人： Eric Mazur ,  Mark Winkler ,  Brian R. Tull

IPC分类号： H01L31/06 ,  H01L31/18 ,  H01L31/076 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/0216

CPC分类号： H01L31/076 ,  H01L31/02167 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/548

摘要： Photovoltaic devices (e.g., solar cells) are disclosed that include at least three radiation absorbing layers, each capable of absorbing radiation over a different wavelength range of the solar radiation spectrum. Any two of these three wavelength ranges can be partially overlapping, or alternatively they can be distinct. The layers are disposed relative to one another so as to form two junctions, each of which includes a depletion region. In some cases, the radiation absorbing layers can collectively absorb radiation over a wavelength range that spans at least about 60%, or 70%, or 80%, and preferably 90% of the solar radiation wavelength spectrum. By way of example, in some embodiments, one layer can exhibit significant absorption of solar radiation (e.g., it can absorb at least one radiation wavelength at an absorptance greater than about 90%) at wavelengths less than about 0.7 microns while another layer can exhibit significant absorption of the solar radiation at wavelengths in a range of about 0.7 microns to about 1 micron. The third layer can in turn exhibit a significant absorption of solar radiation at wavelengths greater than about 1 micron.

摘要翻译： 公开了包括至少三个辐射吸收层的光伏器件（例如，太阳能电池），每个辐射吸收层能够吸收太阳辐射光谱的不同波长范围上的辐射。 这三个波长范围中的任何两个可以部分重叠，或者它们可以是不同的。 这些层相对于彼此设置以形成两个结，其中每一个包括耗尽区。 在一些情况下，辐射吸收层可以共同地吸收在太阳辐射波长谱的至少约60％，或70％，或80％，优选90％的波长范围内的辐射。 作为示例，在一些实施例中，一个层可以在小于约0.7微米的波长下显示太阳辐射的显着吸收（例如，其可以以大于约90％的吸收率吸收至少一个辐射波长），而另一层可以展现 太阳辐射在约0.7微米至约1微米范围内的波长的显着吸收。 此外，第三层可以在大于约1微米的波长下表现出太阳辐射的显着吸收。

公开(公告)号：US08603902B2

公开(公告)日：2013-12-10

申请号：US12864967

申请日：2009-02-02

申请人： Eric Mazur ,  Mark Winkler

发明人： Eric Mazur ,  Mark Winkler

IPC分类号： H01L21/265

CPC分类号： H01L21/223 ,  H01L21/268 ,  H01L31/0288 ,  H01L31/101 ,  Y02E10/50

摘要： Methods and apparatus for processing a substrate (e.g., a semiconductor substrate) is disclosed that includes irradiating at least a portion of the substrate surface with a plurality of short radiation pulses while the surface portion is exposed to a dopant compound. The pulses are selected to have a fluence at the substrate surface that is greater than a melting fluence threshold (a minimum fluence needed for the radiation pulse to cause substrate melting) and less than an ablation fluence threshold (a minimum fluence needed for the radiation pulse to cause substrate ablation). In this manner a quantity of the dopant can be incorporated into the substrate while ensuring that the roughness of the substrate's surface is significantly less than the wavelength of the applied radiation pulses.

摘要翻译： 公开了用于处理衬底（例如，半导体衬底）的方法和装置，其包括在表面部分暴露于掺杂剂化合物的同时，用多个短辐射脉冲照射衬底表面的至少一部分。 脉冲被选择为在衬底表面上具有大于熔融注量阈值（辐射脉冲引起衬底熔化所需的最小注量））和小于消融注量阈值（辐射脉冲所需的最小注量） 引起基底消融）。 以这种方式，可以将一定量的掺杂剂掺入衬底中，同时确保衬底表面的粗糙度显着小于施加的辐射脉冲的波长。

公开(公告)号：US08598051B2

公开(公告)日：2013-12-03

申请号：US13021409

申请日：2011-02-04

申请人： Eric Mazur ,  Mengyan Shen

发明人： Eric Mazur ,  Mengyan Shen

IPC分类号： H01L21/268 ,  G21K5/10

CPC分类号： H01L21/268 ,  B23K26/1224 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02686 ,  H01L21/2252 ,  H01L21/302 ,  H01L21/67075 ,  Y10S438/94

摘要： The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

摘要翻译： 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米尺寸表面特征的半导体衬底。 一方面，公开了一种处理半导体衬底的方法，其包括将衬底的至少一部分表面与流体接触，并将该表面部分暴露于一个或多个飞秒脉冲，以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。

公开(公告)号：US08294891B2

公开(公告)日：2012-10-23

申请号：US12523567

申请日：2008-01-22

申请人： Eric Mazur ,  Eric Diebold

发明人： Eric Mazur ,  Eric Diebold

IPC分类号： G01N21/03 ,  G01J3/44

CPC分类号： G01N21/658 ,  B65D79/02 ,  B65D2203/02 ,  G01N33/02

摘要： In one aspect, a system for use in product packaging is disclosed that includes a polymeric sensing substrate coupled to a package such that a front sensing surface thereof is in contact with a portion of a product, e.g., a fungible product, stored in the package and a back surface thereof is accessible via an environment external to the package. The system further includes a radiation source adapted to direct radiation to the substrate's back surface such that the radiation would interact with one or more molecular species of the product that are in contact with the substrate's sensing surface. The system also includes a detector that is adapted to detect radiation returning from the substrate in response to its illumination by the radiation source. The front surface of the sensing substrate can comprise a plurality of micron-sized or submicron-sized ridges having a discontinuous or continuous metal coating, e.g., a metallic layer with a thickness in a range of about 10 nm to about 1000 nm (and preferably in a range of about 50 nm to about 120 nm), disposed thereon.

摘要翻译： 在一个方面，公开了一种用于产品包装的系统，其包括耦合到包装的聚合物感测衬底，使得其前感测表面与存储在包装中的产品（例如，可替代产品）的一部分接触 并且其后表面可通过包装外部的环境访问。 该系统还包括适于将辐射引导到衬底的背表面的辐射源，使得辐射将与与衬底的感测表面接触的产品的一种或多种分子种类相互作用。 该系统还包括检测器，其适于检测响应于其由辐射源照射的从衬底返回的辐射。 感测基板的前表面可以包括具有不连续或连续金属涂层的多个微米尺寸或亚微米尺寸的脊，例如厚度在约10nm至约1000nm范围内的金属层（优选地， 在约50nm至约120nm的范围内）。

公开(公告)号：US20110045244A1

公开(公告)日：2011-02-24

申请号：US12864967

申请日：2009-02-02

申请人： Eric Mazur ,  Mark Winkler

发明人： Eric Mazur ,  Mark Winkler

IPC分类号： B32B3/00 ,  H01S3/00 ,  C23C14/22 ,  H01L21/268

CPC分类号： H01L21/223 ,  H01L21/268 ,  H01L31/0288 ,  H01L31/101 ,  Y02E10/50

摘要： Methods and apparatus for processing a substrate (e.g., a semiconductor substrate) is disclosed that includes irradiating at least a portion of the substrate surface with a plurality of short radiation pulses while the surface portion is exposed to a dopant compound. The pulses are selected to have a fluence at the substrate surface that is greater than a melting fluence threshold (a minimum fluence needed for the radiation pulse to cause substrate melting) and less than an ablation fluence threshold (a minimum fluence needed for the radiation pulse to cause substrate ablation). In this manner a quantity of the dopant can be incorporated into the substrate while ensuring that the roughness of the substrate's surface is significantly less than the wavelength of the plied radiation pulses.

摘要翻译： 公开了用于处理衬底（例如，半导体衬底）的方法和装置，其包括在表面部分暴露于掺杂剂化合物的同时，用多个短辐射脉冲照射衬底表面的至少一部分。 脉冲被选择为在衬底表面上具有大于熔融注量阈值（辐射脉冲引起衬底熔化所需的最小注量））和小于消融注量阈值（辐射脉冲所需的最小注量） 引起基底消融）。 以这种方式，可以将一定量的掺杂剂掺入到衬底中，同时确保衬底表面的粗糙度显着小于合并的辐射脉冲的波长。

公开(公告)号：US07568365B2

公开(公告)日：2009-08-04

申请号：US10136160

申请日：2002-05-01

申请人： Chris Schaffer ,  André Brodeur ,  Rafael R. Gattass ,  Jonathan B. Ashcom ,  Eric Mazur

发明人： Chris Schaffer ,  André Brodeur ,  Rafael R. Gattass ,  Jonathan B. Ashcom ,  Eric Mazur

IPC分类号： C03B32/00

CPC分类号： C03C23/0025 ,  G02B6/125 ,  G02B6/13 ,  G02B2006/1215

摘要： Thermal 3-D microstructuring of photonic structures is provided by depositing laser energy by non-linear absorption into a focal volume about each point of a substrate to be micromachined at a rate greater than the rate that it diffuses thereout to produce a point source of heat in a region of the bulk larger than the focal volume about each point that structurally alters the region of the bulk larger than the focal volume about each point, and by dragging the point source of heat thereby provided point-to-point along any linear and non-linear path to fabricate photonic structures in the bulk of the substrate. Exemplary optical waveguides and optical beamsplitters are thermally micromachined in 3-D in the bulk of a glass substrate. The total number of pulses incident to each point is controlled, either by varying the rate that the point source of heat is scanned point-to-point and/or by varying the repetition rate of the laser, to select the mode supported by the waveguide or beamsplitter to be micromachined. A wide range of passive and active optical and other devices may be thermally micromachined.

公开(公告)号：US07504702B2

公开(公告)日：2009-03-17

申请号：US11445900

申请日：2006-06-02

申请人： Eric Mazur ,  James Edward Carey, III

发明人： Eric Mazur ,  James Edward Carey, III

IPC分类号： H01L31/06

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

摘要翻译： 一方面，本发明提供一种硅光电检测器，其具有掺杂有平均浓度在约0.5原子％至约1.5原子％范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压，以便于响应于表面层的照射而产生电信号，例如光电流。 对于约250nm至约1050nm范围内的入射波长，光电探测器表现出大于约1A / W的响应度，对于较长波长（例如高达约3.5微米），响应度大于约0.1A / W。

公开(公告)号：US20090046283A1

公开(公告)日：2009-02-19

申请号：US12017720

申请日：2008-01-22

申请人： Eric Mazur ,  Eric Diebold ,  Steven M. Ebstein

发明人： Eric Mazur ,  Eric Diebold ,  Steven M. Ebstein

IPC分类号： G01J3/44 ,  H01L21/00

CPC分类号： B81B1/006 ,  B01L3/5023 ,  B01L3/5027 ,  B01L3/5088 ,  B01L2200/12 ,  B01L2300/165 ,  B81C1/00206 ,  B82Y15/00 ,  B82Y30/00 ,  G01N21/658

摘要： In one aspect, the present invention generally provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with a thin metallic layer, e.g., one having a thickness in a range of about 10 nm to about 1000 nm.

摘要翻译： 一方面，本发明通常提供用于制造用于各种分析和/或诊断应用的基底的方法。 可以通过将半导体表面（例如，硅表面）暴露于多个短激光脉冲以在表面上产生微米尺寸且优选亚微米尺寸的结构来产生这种基板。 然后可以用薄金属层涂覆结构化表面，例如具有在约10nm至约1000nm范围内的厚度的金属层。

公开(公告)号：US20090003783A1

公开(公告)日：2009-01-01

申请号：US12169173

申请日：2008-07-08

申请人： Eric Mazur ,  Limin Tong ,  Rafael Gattass

发明人： Eric Mazur ,  Limin Tong ,  Rafael Gattass

IPC分类号： G02B6/04

CPC分类号： G02B6/107 ,  B82Y20/00 ,  C03B37/025 ,  C03B37/027 ,  C03B37/15 ,  C03B2201/02 ,  C03B2201/34 ,  G02B6/2552 ,  G02B6/2835

摘要： The present invention provides nanometer-sized diameter silica fibers that exhibit high diameter uniformity and surface smoothness. The silica fibers can have diameters in a range of a about 20 nm to about 1000 nm. An exemplary method according to one embodiment of the invention for generating such fibers utilizes a two-step process in which in an initial step a micrometer sized diameter silica preform fiber is generated, and in a second step, the silica preform is drawn while coupled to a support element to form a nanometer sized diameter silica fiber. The portion of the support element to which the preform is coupled is maintained at a temperature suitable for drawing the nansized fiber, and is preferably controlled to exhibit a temporally stable temperature profile.

摘要翻译： 本发明提供了纳米级直径的二氧化硅纤维，其表现出高直径均匀性和表面光滑度。 二氧化硅纤维的直径可以在约20nm至约1000nm的范围内。 根据用于产生这种纤维的本发明的一个实施方案的示例性方法利用两步法，其中在初始步骤中产生微米尺寸直径的二氧化硅预制纤维，并且在第二步骤中，将二氧化硅预制件拉制，同时连接到 形成纳米尺寸直径的二氧化硅纤维的支撑元件。 将预型件连接到的支撑元件的部分保持在适于拉制纳米纤维的温度，并且优选地被控制以呈现时间上稳定的温度分布。

公开(公告)号：US07442629B2

公开(公告)日：2008-10-28

申请号：US11196929

申请日：2005-08-04

申请人： Eric Mazur ,  Mengyan Shen

发明人： Eric Mazur ,  Mengyan Shen

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/268 ,  B23K26/1224 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02686 ,  H01L21/2252 ,  H01L21/302 ,  H01L21/67075 ,  Y10S438/94

摘要： The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

摘要翻译： 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米尺寸表面特征的半导体衬底。 一方面，公开了一种处理半导体衬底的方法，其包括将衬底的至少一部分表面与流体接触，并将该表面部分暴露于一个或多个飞秒脉冲，以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。