公开(公告)号：US20180090345A1

公开(公告)日：2018-03-29

申请号：US15468259

申请日：2017-03-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Yutaka KOUZUMA ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kenetsu YOKOGAWA ,  Tomoyuki WATANABE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/3211 ,  H01J37/32724 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/67115

Abstract: A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.

公开(公告)号：US20180068835A1

公开(公告)日：2018-03-08

申请号：US15437040

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Kenetsu YOKOGAWA ,  Tadayoshi KAWAGUCHI ,  Takamasa ICHINO

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32651 ,  C23C16/509 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069

Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

公开(公告)号：US20170011890A1

公开(公告)日：2017-01-12

申请号：US15204183

申请日：2016-07-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01J37/32 ,  C23C16/46 ,  C23C16/50

CPC classification number: H01J37/32532 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/511 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32715 ,  H01J37/32724

Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

Abstract translation: 一种等离子体处理装置，其包括设置在真空容器中并在内部减压的处理室，设置在处理室中并且处理对象的样品被放置并保持在其上的样品台，以及等离子体形成单元 其使用处理气体形成等离子体，并且使用等离子体处理样品，并且等离子体处理装置包括：电介质膜，其设置在构成样品台并连接到地面的金属基底上，并且包括提供高的膜状电极 内部电力供电; 多个元件，其设置在基座中的空间中并具有发热或冷却功能; 以及向多个元件供电的馈送路径，其中在馈送路径上不设置用于抑制高频的滤波器。

公开(公告)号：US20150156856A1

公开(公告)日：2015-06-04

申请号：US14552813

申请日：2014-11-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Masatoshi MIYAKE ,  Kenetsu YOKOGAWA ,  Takashi UEMURA ,  Hiromichi KAWASAKI

IPC: H05H1/24

CPC classification number: H01J37/32568 ,  H01J37/32091

Abstract: A heat treatment apparatus includes a heat treatment chamber to conduct heat treatment of a heated sample, a planar first electrode disposed in the heat treatment chamber, a planar second electrode to create plasma in a space between the first and second electrodes and to heat the heated sample, a radio-frequency power source to supply the first electrode with radio-frequency power to create the plasma, and a sample stage opposing the first electrode with the second electrode placed between the first electrode and the sample stage, to mount thereon the heated sample, wherein the first electrode is lower in thermal emissivity than the second electrode.

Abstract translation: 一种热处理设备包括：热处理室，用于对加热的样品进行热处理，设置在热处理室中的平面第一电极;平面第二电极，用于在第一和第二电极之间的空间中产生等离子体，并加热加热的 样品，用于向第一电极提供射频功率以产生等离子体的射频电源，以及与第一电极相对的样品台，其中第二电极位于第一电极和样品台之间，以在其上安装加热的 样品，其中所述第一电极的热发射率低于所述第二电极。