公开(公告)号：US20190157053A1

公开(公告)日：2019-05-23

申请号：US15902837

申请日：2018-02-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoichi ISOMURA ,  Yuusaku SAKKA ,  Kouhei SATOU ,  Takashi UEMURA ,  Satoshi YAMAMOTO ,  Hiromichi KAWASAKI

IPC: H01J37/32 ,  H01L21/677 ,  H01J37/18 ,  H01J37/34 ,  H01L21/67 ,  H01L21/687

Abstract: There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower member of which the position is fixed within a range of the angle at which the lower member is capable of turning, and the upper member is suspended.

公开(公告)号：US20140202995A1

公开(公告)日：2014-07-24

申请号：US13956492

申请日：2013-08-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masatoshi MIYAKE ,  Ken'etsu YOKOGAWA ,  Takashi UEMURA ,  Hiromichi KAWASAKI

IPC: H01L21/324 ,  H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/1608

Abstract: A plasma heat treatment apparatus, provided for enabling a control of temperature distribution within electrode surfaces, without accompanying an increase of an electric power to be inputted therein, even in case when heating is made on a sample to be heated, having a large diameter thereof, with applying plasma, comprises a treatment chamber 100 for heat the sample 101 to be treated therein, a first electrode 102, which is disposed within the treatment chamber, a plate-shaped second electrode 103, which is disposed opposing to the first electrode 102, a radio-frequency power supply 111 for supplying radio-frequency electric power to the first electrode 102 or the second electrode 103, and a gas introducing means 113 for supplying a gas within the treatment chamber, wherein the first electrode 102 has an opening portion therein.

Abstract translation: 一种等离子体热处理装置，其特征在于，即使在对具有大直径的加热用样品进行加热的情况下，也可以控制电极表面内的温度分布，而不伴随着输入电力的增加。 在施加等离子体的情况下，包括用于加热待处理样品101的处理室100，设置在处理室内的第一电极102，与第一电极102相对设置的板状第二电极103 用于向第一电极102或第二电极103提供高频电力的射频电源111和用于在处理室内供给气体的气体引入装置113，其中第一电极102具有开口部分 其中。

公开(公告)号：US20190267219A1

公开(公告)日：2019-08-29

申请号：US16111752

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi UEMURA ,  Takamasa ICHINO ,  Kazunori NAKAMOTO ,  Kohei SATO

IPC: H01J37/32

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

公开(公告)号：US20160372305A1

公开(公告)日：2016-12-22

申请号：US15050685

申请日：2016-02-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Takashi UEMURA ,  Susumu TAUCHI ,  Kohei SATOU

IPC: H01J37/32

Abstract: A plasma processing apparatus has a vacuum container having a processing chamber in which a wafer is processed by plasma and at least one member constituting the vacuum container movable and detachable in a horizontal direction with respect to a base plate. The plasma processing apparatus includes a lifter arranged at a side of the vacuum container across the vacuum container on the base plate, coupled to an end portion on the opposite side of a vacuum transfer chamber on which the wafer is transferred in a decompressed interior, and having a vertical shaft to move the detachable member vertically. The lifter includes: a coupling portion coupled to the vertical shaft and the detachable member and moved along the vertical shaft; and a turning shaft being a joint portion arranged at the coupling portion and having a vertical rotational shaft, the detachable member being horizontally turned around the turning shaft.

Abstract translation: 等离子体处理装置具有真空容器，该真空容器具有处理室，其中通过等离子体处理晶片，并且构成真空容器的至少一个构件相对于基板在水平方向上可移动和拆卸。 等离子体处理装置包括一个升降机，该升降器布置在真空容器的一侧，穿过基板上的真空容器，该升降器与真空传送室的相反侧的端部连接，真空传送室上的晶片被转移到减压内部， 具有垂直轴以垂直地移动可拆卸构件。 升降机包括：耦合部分，其联接到垂直轴和可拆卸构件并沿着竖直轴移动; 以及转轴，其是设置在所述联接部上并具有垂直旋转轴的接合部，所述可拆卸构件围绕所述转动轴水平转动。

公开(公告)号：US20150156856A1

公开(公告)日：2015-06-04

申请号：US14552813

申请日：2014-11-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Masatoshi MIYAKE ,  Kenetsu YOKOGAWA ,  Takashi UEMURA ,  Hiromichi KAWASAKI

IPC: H05H1/24

CPC classification number: H01J37/32568 ,  H01J37/32091

Abstract: A heat treatment apparatus includes a heat treatment chamber to conduct heat treatment of a heated sample, a planar first electrode disposed in the heat treatment chamber, a planar second electrode to create plasma in a space between the first and second electrodes and to heat the heated sample, a radio-frequency power source to supply the first electrode with radio-frequency power to create the plasma, and a sample stage opposing the first electrode with the second electrode placed between the first electrode and the sample stage, to mount thereon the heated sample, wherein the first electrode is lower in thermal emissivity than the second electrode.

Abstract translation: 一种热处理设备包括：热处理室，用于对加热的样品进行热处理，设置在热处理室中的平面第一电极;平面第二电极，用于在第一和第二电极之间的空间中产生等离子体，并加热加热的 样品，用于向第一电极提供射频功率以产生等离子体的射频电源，以及与第一电极相对的样品台，其中第二电极位于第一电极和样品台之间，以在其上安装加热的 样品，其中所述第一电极的热发射率低于所述第二电极。

公开(公告)号：US20140008352A1

公开(公告)日：2014-01-09

申请号：US13928708

申请日：2013-06-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi UEMURA ,  Ken'etsu YOKOGAWA ,  Masatoshi MIYAKE ,  Hiromichi KAWASAKI

IPC: H05B6/02

CPC classification number: H05B6/02 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32724 ,  H05B6/62

Abstract: In order to provide a heat treatment apparatus that is high in thermal efficiency, and can reduce a surface roughness of a specimen surface even when a specimen is heated at 1200° C. or higher, in a heat treatment apparatus that conducts a heat treatment by the aid of plasma, a heat treatment chamber includes a heating plate that heats a specimen by the aid of the plasma, and an electrode that is applied with a plasma generation radio-frequency power. The heating plate includes a beam, and is connected to the heat treatment chamber through the beam and the thermal expansion absorption member, and the thermal expansion absorption member has an elastic member.

Abstract translation: 为了提供一种热效率高的热处理装置，即使在1200℃以上的试样被加热的情况下，也能够降低试样表面的表面粗糙度，在进行热处理的热处理装置中 等离子体的辅助，热处理室包括借助等离子体加热样品的加热板和施加有等离子体产生射频功率的电极。 加热板包括梁，并且通过梁和热膨胀吸收构件连接到热处理室，并且热膨胀吸收构件具有弹性构件。

公开(公告)号：US20190189403A1

公开(公告)日：2019-06-20

申请号：US16216455

申请日：2019-03-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Luke Joseph HIMBELE ,  Yasushi SONODA ,  Takashi UEMURA ,  Tomoyoshi ICHIMARU ,  Junya SASAKI

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  F16K31/12 ,  F16K31/06 ,  F16K51/02

CPC classification number: H01J37/32449 ,  C23C16/45536 ,  F16K31/0603 ,  F16K31/0675 ,  F16K31/12 ,  F16K51/02 ,  H01J37/32192 ,  H01L21/3065

Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.

公开(公告)号：US20160217976A1

公开(公告)日：2016-07-28

申请号：US14846732

申请日：2015-09-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Takashi UEMURA ,  Susumu TAUCHI ,  Kohei SATO ,  Eiji MARUYAMA

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32899 ,  H01L21/6719

Abstract: A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.

Abstract translation: 提供了具有优异的加工均匀性并且即使当待处理物体具有增加的直径时也能够有效地执行常规和非常规维护的真空处理设备。 在具有真空传送室的真空处理设备中，该设备包括具有圆柱形形状的下部容器，包括样品台的样品台单元和具有相对于中心轴线对称布置的支撑梁的环形样品台架基座 样品台，具有圆柱形状的上容器，以及移动机构，其固定到样品台基座，并且能够使样本台单元沿垂直方向和水平方向移动。