公开(公告)号：US20120049157A1

公开(公告)日：2012-03-01

申请号：US13221456

申请日：2011-08-30

申请人： Hajime NAGO ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

摘要翻译： 根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。 在第一包层上形成有源层，并且包括含In氮化物半导体。 在有源层上形成GaN层。 第一AlGaN层形成在GaN层上，并具有第一Al组成比。 在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组分比的第二Al组分比，并且含有比GaN层和第一AlGaN层更大量的Mg。 第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

公开(公告)号：US08436395B2

公开(公告)日：2013-05-07

申请号：US13405961

申请日：2012-02-27

申请人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/36

CPC分类号： H01L33/24 ,  H01L33/382 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

公开(公告)号：US20130001584A1

公开(公告)日：2013-01-03

申请号：US13405961

申请日：2012-02-27

申请人： Takahiro SATO ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Takahiro SATO ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/24 ,  H01L33/382 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

公开(公告)号：US20120217524A1

公开(公告)日：2012-08-30

申请号：US13206649

申请日：2011-08-10

申请人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/50 ,  H01L33/40

CPC分类号： H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

公开(公告)号：US08704268B2

公开(公告)日：2014-04-22

申请号：US13404531

申请日：2012-02-24

申请人： Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/30

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

公开(公告)号：US20120292650A1

公开(公告)日：2012-11-22

申请号：US13220072

申请日：2011-08-29

申请人： Naoharu SUGIYAMA ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Naoharu SUGIYAMA ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/24 ,  H01L33/26 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。 发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。 透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

公开(公告)号：US08878213B2

公开(公告)日：2014-11-04

申请号：US13220072

申请日：2011-08-29

申请人： Naoharu Sugiyama ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L33/22 ,  H01L33/08

CPC分类号： H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。 发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。 透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

公开(公告)号：US08766311B2

公开(公告)日：2014-07-01

申请号：US13206649

申请日：2011-08-10

申请人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

CPC分类号： H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

公开(公告)号：US08816367B2

公开(公告)日：2014-08-26

申请号：US13727147

申请日：2012-12-26

申请人： Jumpei Tajima ,  Kotaro Zaima ,  Hiroshi Ono ,  Shinji Yamada ,  Shigeya Kimura ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Jumpei Tajima ,  Kotaro Zaima ,  Hiroshi Ono ,  Shinji Yamada ,  Shigeya Kimura ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极，第一和第二半导体层以及发光层。 第一电极包括第一区域，第二区域和设置在它们之间的第三区域。 第一半导体层包括第一区域上的第一部分和第二区域上的第二部分。 发光层包括第一部分上的第三部分和第二部分上的第四部分。 第二半导体层包括第三部分上的第五部分和第四部分上的第六部分。 绝缘层设置在第三区域上的第一和第二部分之间以及第三和第四部分之间。 第二电极包括设置在绝缘层上的第七部分，与第五和第六部分的侧表面接触的第八和第九部分。

公开(公告)号：US20130328055A1

公开(公告)日：2013-12-12

申请号：US13724007

申请日：2012-12-21

申请人： Jumpei TAJIMA ,  Kotaro Zaima ,  Shigeya Kimura ,  Hiroshi Ono ,  Shinji Yamada ,  Satoshi Mitsugi ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Jumpei TAJIMA ,  Kotaro Zaima ,  Shigeya Kimura ,  Hiroshi Ono ,  Shinji Yamada ,  Satoshi Mitsugi ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/40

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极，第一，第二和第三半导体层以及发光层。 第一导电类型的第一半导体层设置在第一电极上。 发光层设置在第一半导体层上。 第二导电类型的第二半导体层设置在发光层上。 具有低杂质浓度的第三半导体层设置在第二半导体层的一部分上。 第二电极包括焊盘部分和窄线部分。 焊盘部设置在第三半导体层上。 窄线部分从焊盘部分延伸出并且包括沿垂直于堆叠方向的平面延伸的延伸部分。 窄线部分与第二半导体层接触。