公开(公告)号：US20050138992A1

公开(公告)日：2005-06-30

申请号：US10750199

申请日：2003-12-30

申请人： Hok-Kin Choi ,  Robert Meagley

发明人： Hok-Kin Choi ,  Robert Meagley

IPC分类号： G01N30/02 ,  H01L21/768 ,  G01N30/00

CPC分类号： H01L21/76808 ,  G01N30/02 ,  G01N2030/027

摘要： Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.

摘要翻译： 公开了用于测定牺牲材料的方法的许多实施例。 在一个实施方案中，可以通过高效液相色谱分析牺牲材料。 可以鉴定与牺牲材料中的材料污染物相关的化学标记。

公开(公告)号：US20050124152A1

公开(公告)日：2005-06-09

申请号：US10985510

申请日：2004-11-10

申请人： Robert Meagley ,  Michael Goodner

发明人： Robert Meagley ,  Michael Goodner

IPC分类号： H01L21/31 ,  H01L21/311 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L29/02 ,  H01L47/00

CPC分类号： H01L21/76808

摘要： A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.

摘要翻译： 复合牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 复合牺牲材料包括其中混合有填料的聚合物或低聚物基质。 填充材料可以是可以用于在半导体加工期间修饰复合牺牲材料的一种或多种性质的颗粒物质。

公开(公告)号：US20050084794A1

公开(公告)日：2005-04-21

申请号：US10688109

申请日：2003-10-16

申请人： Robert Meagley ,  Ernisse Putna ,  Wang Yueh

发明人： Robert Meagley ,  Ernisse Putna ,  Wang Yueh

IPC分类号： G03C1/76 ,  G03F7/039 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/0392

摘要： Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

摘要翻译： 本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。 对于本发明的一个实施例，提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体（IML）之间的扩散的组成成分的光致抗蚀剂。 对于其中IML为水的这种实施方案，提供了疏水性的光致抗蚀剂组分，从而减少光致抗蚀剂和水之间的扩散。 在本发明的各种替代实施例中，提供具有一种或多种构成组分的光致抗蚀剂，其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。 对于其中IML为水的这种实施方案，提供具有一种或多种亲水组分的光致抗蚀剂。

公开(公告)号：US20050070096A1

公开(公告)日：2005-03-31

申请号：US10676294

申请日：2003-09-30

申请人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

发明人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.

摘要翻译： 描述了一种形成方法和包括具有单向导电材料的互连结构的器件。 单向导电材料可以覆盖互连材料，和/或可以围绕互连材料，例如通过衬套沟槽和通孔的壁和底座。 单向导电材料可以被配置为在对应于与接触点的突出物相对应的方向上导电，并且覆盖在单向导电材料上方的导电材料，但是在其它方向上没有实质的导电性。 此外，单向导电材料可以在垂直于其形成的表面的方向或沿着或跨平面的方向上导电，但在其它方向上不具有实质的导电性。 最后，单向导电材料可能具有倾向于减少金属扩散，减少电子迁移，提供粘附或粘结和/或用作蚀刻停止的性质。

公开(公告)号：US20070207403A1

公开(公告)日：2007-09-06

申请号：US11366344

申请日：2006-03-02

申请人： Robert Meagley

发明人： Robert Meagley

IPC分类号： G03C1/00

CPC分类号： G03F7/0752 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0755 ,  G03F7/165 ,  Y10S430/109

摘要： By using a branched long chained chain scission polymer as a photoresist for high resolution extreme ultraviolet (EUV), e-beam or 193 nanometer lithography applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.

摘要翻译： 通过使用支链长链断裂聚合物作为用于高分辨率极紫外（EUV），电子束或193纳米光刻应用的光致抗蚀剂，可以实现具有良好机械性能的相对较高分子量的聚合物。 另外，通过使用断链技术，线边缘粗糙度和分辨率可以同时提高。

公开(公告)号：US20060228884A1

公开(公告)日：2006-10-12

申请号：US11321127

申请日：2005-12-28

申请人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

发明人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.

摘要翻译： 描述了一种形成方法和包括具有单向导电材料的互连结构的器件。 单向导电材料可以覆盖互连材料，和/或可以围绕互连材料，例如通过衬套沟槽和通孔的壁和底座。 单向导电材料可以被配置为在对应于与接触点的突出物相对应的方向上导电，并且覆盖在单向导电材料上方的导电材料，但是在其它方向上没有实质的导电性。 此外，单向导电材料可以在垂直于其形成的表面的方向或沿着或跨平面的方向上导电，但在其它方向上不具有实质的导电性。 最后，单向导电材料可能具有倾向于减少金属扩散，减少电子迁移，提供粘附或粘结和/或用作蚀刻停止的性质。

公开(公告)号：US20050260790A1

公开(公告)日：2005-11-24

申请号：US10853307

申请日：2004-05-24

申请人： Michael Goodner ,  Paul Koning ,  James Matabayas ,  Robert Meagley

发明人： Michael Goodner ,  Paul Koning ,  James Matabayas ,  Robert Meagley

IPC分类号： H01L21/44 ,  H01L21/48 ,  H05K3/00 ,  H05K3/10 ,  H05K3/46

CPC分类号： H01L21/4846 ,  H05K3/005 ,  H05K3/107 ,  H05K3/465 ,  H05K2201/09036 ,  H05K2203/0108 ,  H05K2203/1189

摘要： A method of making an electronics substrate is provided. A material is deposited on a base component. The material has a first composition and includes a polymer. A pattern is imprinted into the material by contacting the material with a die and moving a profile of the die into the material. The material is then modified while being held in the profile of the die to cause at least partial curing of the material due to a change in composition of the material from a first composition to a second composition. The die is then removed from the material. Electric conductors are then formed in trenches of the pattern.

摘要翻译： 提供一种制造电子基板的方法。 材料沉积在基底部件上。 该材料具有第一组成并且包括聚合物。 通过使材料与模具接触并将模具的轮廓移动到材料中，将图案压印到材料中。 然后在将材料保持在模具的轮廓中的同时将材料改性以由于材料从第一组合物到第二组合物的组成的变化而使材料至少部分固化。 然后将模具从材料中取出。 然后在图案的沟槽中形成导电体。

公开(公告)号：US20050258107A1

公开(公告)日：2005-11-24

申请号：US10850414

申请日：2004-05-20

申请人： Bob Leet ,  Robert Meagley ,  Michael Goodner ,  Michael McSwiney

发明人： Bob Leet ,  Robert Meagley ,  Michael Goodner ,  Michael McSwiney

IPC分类号： B03C1/00 ,  C02F1/26 ,  C02F1/30 ,  C02F1/32 ,  C02F1/68 ,  C22B3/24 ,  C22B3/26

CPC分类号： C02F1/683 ,  C02F1/26 ,  C02F1/30 ,  C02F1/32 ,  C02F2101/20 ,  C22B3/0097 ,  C22B3/24 ,  Y02P10/234 ,  Y02W10/37 ,  Y10T436/25375

摘要： Methods and systems for the concentration and removal of metal ions from aqueous solutions are described, comprising treating the aqueous solutions with photoswitchable ionophores.

摘要翻译： 描述了从水溶液中浓缩和去除金属离子的方法和系统，包括用可光开关的离子载体处理水溶液。

公开(公告)号：US20050221220A1

公开(公告)日：2005-10-06

申请号：US10816502

申请日：2004-03-31

申请人： Robert Meagley

发明人： Robert Meagley

IPC分类号： G03C1/492 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/143

摘要： Carborane based PAG's are bulky, produce a strong and large superacid, and have polarities that are compatible with the chemically amplified polymers typically used in photoresists. Carborane based PAG's also provide another broad class of bulky PAG's that may be used in photoresist formulations that offer flexibility in acid strength and polarity through changes in chemical structure. These PAG's may be used with EUV wavelengths, 157 nm, or 193 nm. Resolution and critical dimension control may be improved through the use of carborane based PAG's.

摘要翻译： 基于碳硼烷的PAG是体积庞大的，产生强大且超大的超强酸，并且具有与通常用于光致抗蚀剂中的化学增强聚合物相容的极性。 基于碳硼烷的PAG还提供另外一大类庞大的PAG，可用于光刻胶配方中，通过化学结构的变化提供酸强度和极性的灵活性。 这些PAG可以与EUV波长，157nm或193nm一起使用。 通过使用基于碳硼烷的PAG可以改善分辨率和关键尺寸控制。

公开(公告)号：US20050084807A1

公开(公告)日：2005-04-21

申请号：US10688521

申请日：2003-10-17

申请人： Robert Meagley ,  Michael Goodner ,  E. Putna ,  Shan Clark ,  Wang Yueh

发明人： Robert Meagley ,  Michael Goodner ,  E. Putna ,  Shan Clark ,  Wang Yueh

IPC分类号： G03F7/32 ,  G03F7/40 ,  G03C5/18

CPC分类号： G03F7/32 ,  G03F7/40

摘要： Line edge roughness may be reduced by treating a patterned photoresist with a plasticizer. The plasticizer may be utilized in a way to surface treat the photoresist after development. Thereafter, the plasticized photoresist may be subjected to a heating step to reflow the photoresist. The reflow process may reduce the line edge roughness of the patterned, developed photoresist.

摘要翻译： 可以通过用增塑剂处理图案化的光致抗蚀剂来减少线边缘粗糙度。 增塑剂可以以显影处理光刻胶的方式使用。 此后，可以对塑化的光致抗蚀剂进行加热步骤以回流光致抗蚀剂。 回流工艺可以降低图案化显影的光致抗蚀剂的线边缘粗糙度。