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    Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam
    22.
    发明授权
    Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam 失效
    具有检查用于成形电子束的电子掩模的图案的能力的电子束曝光系统

    公开(公告)号：US5180919A

    公开(公告)日：1993-01-19

    申请号：US761454

    申请日：1991-09-18

    申请人： Yoshihisa Oae ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    发明人： Yoshihisa Oae ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    IPC分类号： H01J37/304 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/0451 ,  H01J2237/30455 ,  H01J2237/31776

    摘要： An electron beam exposure system having a capability of checking a pattern to be written on an object comprises an electron beam source for producing an electron beam along an optical axis toward the object, a block mask provided on the optical axis and having selectable aperture patterns therein for correspondingly shaping the electron beam, an addressing deflector fixture for selectively passing the electron beam through a desired aperture on the block mask, an electron optical system for focusing the electron beam shaped by the block mask on the object such that an image of the aperture of the block mask is projected on the object, a screen provided along the optical axis between the block mask and the object for interrupting the electron beam when the electron beam is offset from the alignment with the optical axis, the screen having a through-hole in alignment with the optical axis for passing the electron beam therethrough a controller for controlling the electron optical system such that an image of the aperture of the beam shaping means through which the electron beam has passed is projected on the screen when checking the pattern of the apertures on the block mask, and a detection unit for detecting the image of the aperture that is projected on the screen.

    摘要翻译： 具有检查要写在物体上的图案的能力的电子束曝光系统包括用于沿着光轴向物体产生电子束的电子束源，设置在光轴上并具有可选孔径图案的块掩模 为了对应地形成电子束，用于选择性地使电子束通过块掩模上的所需孔的寻址偏转器固定装置，用于将由掩模掩模形成的电子束聚焦在物体上的电子光学系统，使得孔径的图像 块屏蔽物投影在物体上，当电子束偏离与光轴对准时，沿着光轴设置在屏蔽掩模和物体之间的屏幕，用于中断电子束，屏幕具有通孔 与用于使电子束通过的光轴对准用于控制电子光学系统的控制器 使得当检查块掩模上的孔的图案时，电子束已经通过的光束整形装置的孔径的图像被投影在屏幕上;以及检测单元，用于检测投影的光圈的图像 屏幕上。

    Electron beam exposure system with increased efficiency of exposure operation
    23.
    发明授权
    Electron beam exposure system with increased efficiency of exposure operation 失效
    电子束曝光系统具有更高的曝光效率

    公开(公告)号：US5175435A

    公开(公告)日：1992-12-29

    申请号：US782251

    申请日：1991-10-25

    申请人： Kiichi Sakamoto ,  Shunsuke Fueki ,  Hiroshi Yasuda

    发明人： Kiichi Sakamoto ,  Shunsuke Fueki ,  Hiroshi Yasuda

    IPC分类号： H01L21/027 ,  H01J37/302

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/30422 ,  H01J2237/31776

    摘要： An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.

    摘要翻译： 电子束曝光系统包括图形数据发生器，用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据， 第一和第二图案数据的时间顺序混合。 将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。 然后，判断数据是第一图案数据还是第二图案数据，并且当数据是第二图案数据时，紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径 模式数据，传输到另一个输出路径。 由此，第一和第二图案数据形成并行数据。 这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

    Charged particle beam lithography system and a method thereof
    25.
    发明授权
    Charged particle beam lithography system and a method thereof 失效
    带电粒子束光刻系统及其方法

    公开(公告)号：US5051556A

    公开(公告)日：1991-09-24

    申请号：US429500

    申请日：1989-10-31

    申请人： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Akio Yamada

    发明人： Kiichi Sakamoto ,  Hiroshi Yasuda ,  Akio Yamada

    IPC分类号： H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/15 ,  H01J2237/30411 ,  H01J2237/31776

    摘要： A charged particle beam lithography system comprises a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is moved over the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask, wherein the addressing system comprises an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through selected one of the plurality of apertures except for the predetermined aperture.

    摘要翻译： 带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的束形成孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交叉点 光轴，第二聚焦系统，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间，用于偏转电子束的光束偏转系统，使得光束在该光轴上移动 物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束通过掩模上的选定孔径， 其中寻址系统包括用于可变成形带电粒子束和电磁体的静电偏转器 用于偏转带电粒子束，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的选定的一个孔。

    Photo-cathode image projection apparatus for patterning a semiconductor device
    26.
    发明授权
    Photo-cathode image projection apparatus for patterning a semiconductor device 失效
    用于图案化半导体器件的光阴图像投影设备

    公开(公告)号：US5023462A

    公开(公告)日：1991-06-11

    申请号：US327728

    申请日：1989-03-23

    申请人： Akio Yamada ,  Kiichi Sakamoto ,  Jinko Kudou ,  Hiroshi Yasuda

    发明人： Akio Yamada ,  Kiichi Sakamoto ,  Jinko Kudou ,  Hiroshi Yasuda

    IPC分类号： G03F7/20 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70375 ,  G03F7/70725 ,  H01J37/3175 ,  H01J2237/0206 ,  H01J2237/0262 ,  H01J2237/153 ,  H01J2237/303 ,  H01J2237/30455 ,  H01J2237/31779

    摘要： A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at an electrical potential level that is identical to the electrical potential level of the stage, so that the object supported on the stage is electrically shielded from the photoelectron mask by the acceleration electrode.

    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device
    28.
    发明授权
    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
    掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置

    公开(公告)号：US5952155A

    公开(公告)日：1999-09-14

    申请号：US119593

    申请日：1998-07-21

    申请人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    发明人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    IPC分类号： G03F1/20 ,  H01J37/317 ,  G03F9/00 ,  A61N5/00 ,  G03C5/00 ,  G21K5/10

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31788

    摘要： A device exposing an object to an electron beam employs a mask formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has a respective single aperture or respective plural, spaced apertures formed therein and having a total area size selected to be smaller than the area size of the aperture defining region, in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

    摘要翻译： 将物体暴露于电子束的装置使用由阻挡电子束的材料板形成的掩模，并且其中限定有多个图案曝光块，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形 的电子束通过其中以使物体上的相应图案曝光。 根据控制电子束通过的电流水平，每个孔限定区域具有形成在其中的相应的单个孔或相应的多个间隔开的孔，并且其总面积尺寸被选择为小于孔限定区域的面积尺寸 同时减少通过孔的电子束或图案曝光块的每个孔限定部分的孔的库仑相互作用。