摘要:
A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.
摘要:
In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.
摘要:
In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要:
A method for producing a polarizer patterned with a plural number of portions having a polarizing ability or direction of polarization comprising the first step of producing a surface oriented in a pre-determined direction on a substrate, the second step of producing a polymerizable molecular layer which comprises polymerizable molecules on the above surface, the third step of polymerizing the molecules in said polymerizable molecular layer into a desired pattern and the fourth step of removing the unpolymerized portion of said polymerizable molecular layer. For example, the following procedure is repeated on one surface of a substrate to be given a polarizing ability: (1) An organic thin film uniformly oriented in a particular direction is produced by the Langmuir-Blodgett method, (2) a polymerizable molecular layer is produced on the above thin film, (3) the molecules in the polymerizable molecular layer is polymerized into a desired pattern and (4) the portion left unpolymerized of the polymerizable molecular layer is removed. By this treatment, a polarizer having as many orientation directions as the number of repetitions is obtained. The orientational order can also be given by rubbing in place of the Langmuir-Blodgett method.
摘要:
An information processing apparatus issuing qualification information that is used by a terminal apparatus in using a service includes an authenticating unit configured to receive an authentication request, which includes organization information, domain information, and account information in an on-premises environment, from the terminal apparatus, and search for a user belonging to an organization identified by the organization information from user administration information based on the account information in the on-premises environment in response to a correspondence between the organization information and the domain information inside organization administration information, which causes the organization information and the domain information to correspond; and a qualification information issuing unit configured to issue the qualification information to the searched user.
摘要:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要:
In order to resolve problems of an increase in cost of transportation and vessels for polishing solutions to polish metal films, and of aging change of the polishing solutions, apparatus for preparing and mixing solutions of polishing materials without including abrasive are installed at a site the same as a site of polishing apparatus, an abrasive free slurry is supplied to the polishing apparatus and a metal film on a wiring substrate is polished to thereby form embedded metal wirings by which the cost of polishing metal can significantly be reduced and stability of the polishing solution is promoted.
摘要:
A polishing method comprising mechanically polishing the surface of a metal film by the use of a polishing solution comprising an oxidizer, a substance which renders an oxide water-soluble, a thickener and water, is suitable for polishing the metal film at a high removal rate with suppressed scratching, delamination, dishing and erosion, and can be applied to production of semiconductors, etc.