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    Multilayered wiring structure, method of forming buried wiring, semiconductor device, method of manufacturing semiconductor device, semiconductor mounted device, and method of manufacturing semiconductor mounted device
    3.
    发明申请
    Multilayered wiring structure, method of forming buried wiring, semiconductor device, method of manufacturing semiconductor device, semiconductor mounted device, and method of manufacturing semiconductor mounted device 审中-公开
    多层布线结构，掩埋布线的形成方法，半导体器件，半导体器件的制造方法，半导体安装器件以及制造半导体安装器件的方法

    公开(公告)号：US20050170641A1

    公开(公告)日：2005-08-04

    申请号：US11014883

    申请日：2004-12-20

    申请人： Seiichi Kondo ,  Kaori Misawa

    发明人： Seiichi Kondo ,  Kaori Misawa

    IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/532

    CPC分类号： H01L21/7684 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a buried wiring in a low-k dielectric film, includes: forming a low-k dielectric film having a dielectric constant of 3 or less on an underlayer; removing the low-k dielectric film by a first width from an edge of the underlayer; forming a cap film on the low-k dielectric film, after removing the low-k dielectric film by the first width; forming a groove in the cap film and the low-k dielectric film; forming a conductive film in the groove and on the cap film; removing the conductive film by a second width, different from the first width by 1 mm or more, from the edge of the underlayer; and polishing unnecessary portions of the conductive film on the cap film, after removing the conductive film by the second width.

    摘要翻译： 在低k电介质膜中形成掩埋布线的方法包括：在底层上形成介电常数为3以下的低k电介质膜; 从底层的边缘去除第一宽度的低k电介质膜; 在将低k电介质膜除去第一宽度之后，在低k电介质膜上形成盖膜; 在盖膜和低k电介质膜中形成凹槽; 在槽和盖膜中形成导电膜; 从所述底层的边缘除去所述导电膜的距离不同于所述第一宽度1mm以上的第二宽度; 并且在将导电膜除去第二宽度之后，在盖膜上抛光导电膜的不需要的部分。

    Management Service Device, Backup Service Device, Communication Terminal Device, and Storage Medium
    4.
    发明申请
    Management Service Device, Backup Service Device, Communication Terminal Device, and Storage Medium 审中-公开
    管理服务设备，备份服务设备，通信终端设备和存储介质

    公开(公告)号：US20080260156A1

    公开(公告)日：2008-10-23

    申请号：US11660105

    申请日：2004-08-19

    申请人： Akihiro Baba ,  Shouji Sakurai ,  Seiichi Kondo ,  Tatsuji Munaka ,  Mariko Sawamura

    发明人： Akihiro Baba ,  Shouji Sakurai ,  Seiichi Kondo ,  Tatsuji Munaka ,  Mariko Sawamura

    IPC分类号： H04L9/06 ,  G06F21/00

    CPC分类号： G06F21/6209 ,  G06F11/1458 ,  G06F11/1464 ,  G06F11/1469 ,  G06F21/34 ,  G06F21/88 ,  G06F2221/2103 ,  G06F2221/2129

    摘要： It is an object to provide a method for invalidation and new registration of a storage medium, a method for backup of data stored in a storage medium and for restoration of backup data to a storage medium, and a method for encryption of and application of an electronic signature to data to be backed up, and for decryption of backup data to be restored and verification of a signature. A service device includes a reception unit for receiving a request for data processing regarding a storage medium from a communication terminal device connected to the storage medium, an authentication unit for performing authentication of whether or not the storage medium connected to the communication terminal device is valid, and a database for storing a public key of the storage medium, wherein, when the reception unit receives a request for invalidation of the first storage medium from the communication terminal device, and the authentication unit authenticates the second storage medium connected to the communication terminal device as a valid storage medium, the database deletes the public key of the first storage medium stored in the database.

    摘要翻译： 本发明的目的是提供一种用于存储介质的无效和新的注册的方法，用于备份存储在存储介质中的数据的方法以及用于将备份数据恢复到存储介质的方法，以及用于对存储介质进行加密和应用的方法 对要备份的数据进行电子签名，以及解密要恢复的备份数据和签名的验证。 服务设备包括：接收单元，用于从连接到存储介质的通信终端设备接收关于存储介质的数据处理的请求;认证单元，用于执行与通信终端设备连接的存储介质是否有效的认证 以及用于存储所述存储介质的公开密钥的数据库，其中，当所述接收单元从所述通信终端设备接收到所述第一存储介质的无效请求时，所述认证单元认证连接到所述通信终端的所述第二存储介质 设备作为有效的存储介质，数据库删除存储在数据库中的第一个存储介质的公开密钥。

    PROCESS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    5.
    发明申请
    PROCESS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    制造半导体集成电路器件的工艺

    公开(公告)号：US20080233736A1

    公开(公告)日：2008-09-25

    申请号：US12127564

    申请日：2008-05-27

    申请人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

    发明人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/0209 ,  G09G5/399 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

    摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

    摘要翻译： 为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层 含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

    Process for manufacturing semiconductor integrated circuit device
    7.
    发明申请
    Process for manufacturing semiconductor integrated circuit device 有权
    半导体集成电路器件制造工艺

    公开(公告)号：US20060141792A1

    公开(公告)日：2006-06-29

    申请号：US11357181

    申请日：2006-02-21

    申请人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

    发明人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

    IPC分类号： H01L21/44

    CPC分类号： H01L21/0209 ,  G09G5/399 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

    摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP). method, a process for manufacturing. a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

    摘要翻译： 为了提供通过化学机械抛光（CMP）形成的金属配线的防腐蚀技术。 方法，制造方法。 根据本发明的半导体集成电路器件包括以下步骤：在晶片的主面上形成Cu（或含有Cu作为主要成分的Cu合金）的金属层，然后通过化学机械抛光使金属层平坦化 （CMP）方法形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

    Process for manufacturing semiconductor integrated circuit device
    8.
    发明授权
    Process for manufacturing semiconductor integrated circuit device 有权
    半导体集成电路器件制造工艺

    公开(公告)号：US06800557B2

    公开(公告)日：2004-10-05

    申请号：US10369716

    申请日：2003-02-21

    申请人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

    发明人： Naofumi Ohashi ,  Junji Noguchi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada ,  Kenji Hinode ,  Yoshio Homma ,  Seiichi Kondo

    IPC分类号： H01L21302

    CPC分类号： H01L21/0209 ,  G09G5/399 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

    摘要： In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

    摘要翻译： 为了提供通过化学机械抛光（CMP）方法形成的金属配线的防腐蚀技术，根据本发明的半导体集成电路器件的制造方法包括以下步骤：形成Cu（或Cu合金）的金属层 含有Cu作为主要成分），然后通过化学机械抛光（CMP）方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态，使其不会变干; 并将晶片的主要表面保持在潮湿状态。

    Polishing method
    10.
    发明授权
    Polishing method 有权
    抛光方法

    公开(公告)号：US06596638B1

    公开(公告)日：2003-07-22

    申请号：US09618999

    申请日：2000-07-18

    申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    IPC分类号： H01L21302

    CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

    摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。 在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。