利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

51 条记录 (耗时 0.023 秒)

    Photodetector using photomultiplier and gain control method
    21.
    发明授权
    Photodetector using photomultiplier and gain control method 有权
    光电检测器采用光电倍增管和增益控制方式

    公开(公告)号：US07323674B2

    公开(公告)日：2008-01-29

    申请号：US11506204

    申请日：2006-08-18

    申请人： Hisaki Kato ,  Hideki Shimoi ,  Kazuya Horiuchi ,  Toshiaki Ushizu

    发明人： Hisaki Kato ,  Hideki Shimoi ,  Kazuya Horiuchi ,  Toshiaki Ushizu

    IPC分类号： H01J40/14 ,  H01J43/00

    CPC分类号： H01J43/22 ,  H01J40/14 ,  H01J43/045

    摘要： The present invention relates to a photodetector that has a structure capable of realizing a wide range gain adjustment for each of electron multiplier channels respectively assigned to a plurality of light incidence regions of a multi-anode multiplier. The photodetector comprises a multi-anode photomultiplier, and a bleeder circuit unit. The multi-anode multiplier has a dynode unit constituted by N (an integer or no less than 3) dynode plates, and n-th (an integer of no less then 2) dynode plate is constituted by a plurality of control plates respectively corresponding to the multiplier channels. The bleeder circuit unit has a primary section setting each potential of a first to (n−1)-th and (n+1)-th to N-th dynode plates, and a secondary section for individually setting a potential of each control plate at any potential within the range wider than a potential difference between the (n−1)-th and (n+1) dynode plates. By expanding the potential setting range for the control plates rather than the potential difference between the dynode plates adjacent to the n-th dynode plate, the gain of each electron multiplier channel can be controlled by two digits or more.

    摘要翻译： 本发明涉及一种具有能够实现对分别分配给多阳极倍增器的多个入射区域的每个电子倍增器通道的宽范围增益调整的结构的光电检测器。 光电检测器包括多阳极光电倍增管和泄放电路单元。 多阳极倍增器具有由N（整数或不小于3）倍增极板构成的倍增电极单元，并且第n（不小于2的整数）倍增极板由分别对应于 乘数通道。 泄放电路单元具有设定第一至第（n-1）和第（n + 1）至第N倍增电极板的每个电位的主要部分，以及用于单独设置每个控制板的电位的次级部分 在比第（n-1）和（n + 1）倍增极板之间的电位差宽的范围内的任何电位。 通过扩大控制板的电位设置范围，而不是与第n倍增极板相邻的倍增极板之间的电位差，每个电子倍增器通道的增益可以被控制在两位以上。

    Industrial robot
    24.
    发明授权
    Industrial robot 有权
    工业机器人

    公开(公告)号：US07922439B2

    公开(公告)日：2011-04-12

    申请号：US12314569

    申请日：2008-12-12

    申请人： Hisaki Kato

    发明人： Hisaki Kato

    IPC分类号： B25J19/00

    CPC分类号： B25J19/0075 ,  Y10T74/20305

    摘要： A robot comprises a fixed member that has a lower end, a movable member, and an elastic sheet member. The movable member is supported by the fixed member to be movable between an uppermost position and a lowermost position of a movable range given to the movable member in a vertical direction relative to the fixed member. This movable member has a lower end at which an operation tool is provided The elastic sheet member has both ends. Of these ends, one end is fixed to the lower end of the fixed member and the other end is fixed to the lower end of the movable member. This sheet member droops when the movable member moves up to the uppermost position of the fixed member.

    摘要翻译： 机器人包括具有下端的固定构件，可动构件和弹性片构件。 可动构件由固定构件支撑，以能够相对于固定构件沿垂直方向在可移动构件的可移动范围的最上位置和最下位置之间移动。 该可动构件具有设置有操作工具的下端。弹性片构件具有两端。 在这些端部中，一端固定在固定部件的下端，另一端固定在可动部件的下端。 当可动构件向上移动到固定构件的最上位置时，该片构件下垂。

    Spectroscopic device
    25.
    发明授权
    Spectroscopic device 有权
    光谱仪

    公开(公告)号：US07623243B2

    公开(公告)日：2009-11-24

    申请号：US10572369

    申请日：2004-09-13

    申请人： Hisaki Kato

    发明人： Hisaki Kato

    IPC分类号： G01N21/25

    CPC分类号： G01J3/02 ,  G01J3/021 ,  G01J3/0256 ,  G01J3/36

    摘要： A spectroscopic device that can suppress the occurrence of cross-talk when light beams of different wavelength ranges are optically received is provided. Detected light is made incident to a dichroic minor (hereinafter referred to as “mirror”) DM1 along the perpendicular direction of a photoelectric surface 7. Accordingly, light transmitted through the mirror DM1 is made incident substantially perpendicular to the photoelectric surface 7. On the other hand, light reflected from the mirror DM1 is reflected from a main mirror surface 23. At this time, the dichroic mirror array 21 is inclined so that the mirror DM8 side having the minimum shortest wavelength is nearer to the photoelectric surface 7 than the minor DM1 side having the maximum shortest wavelength and substantially parallel to the main minor surface 23a, so that light reflected from the main mirror surface 23a is made incident to the mirror DM2 along the perpendicular direction of the photoelectric surface 7. Accordingly, light transmitted through the mirror DM2 is made incident substantially perpendicular tote photoelectric surface 7. As described above, the light transmitted through each mirror DMn is substantially vertical made incident to the photoelectric surface 7, and thus the occurrence of cross-talk can be suppressed.

    摘要翻译： 提供了可以抑制在不同波长范围的光束被光学接收时串扰发生的分光装置。 检测光沿光电表面7的垂直方向入射到二向色小型（以下称为“镜子”）DM1。因此，透过反射镜DM1的光基本上垂直于光电表面7入射。在 从反射镜DM1反射的光从主镜面23反射。此时，分色镜阵列21倾斜，使得具有最小最短波长的反射镜DM8侧比次要的更靠近光电表面7 DM1侧具有最大最短波长并且基本上平行于主次表面23a，使得从主镜面23a反射的光沿光电表面7的垂直方向入射到反射镜DM2。因此，透过 镜DM2被制成基本上垂直于光电表面7入射。如上所述，透光 通过每个反射镜DMn基本垂直地入射到光电表面7，从而可以抑制串扰的发生。

    Photomultiplier
    26.
    发明授权
    Photomultiplier 有权

    公开(公告)号：US06794629B2

    公开(公告)日：2004-09-21

    申请号：US10468826

    申请日：2003-08-25

    申请人： Hisaki Kato ,  Hideto Kawai

    发明人： Hisaki Kato ,  Hideto Kawai

    IPC分类号： H01J4014

    CPC分类号： H01J43/28 ,  H01J43/045 ,  H01J43/06 ,  H01J43/18 ,  H01J43/22

    摘要： A photomultiplier eliminates the reflection of light off of focusing pieces in a focusing electrode and prevents the photocathode from emitting useless electrons in response to such reflected light by including an oxide film formed over the surface of each focusing piece. The oxide film is also formed on the surface of secondary electron emission pieces in the first and second stage dynodes to eliminate the reflection of light off of the secondary electron emission pieces and to prevent the photocathode from emitting useless electrons in response to such reflected light. Further, a light-absorbing glass partitioning part is provided in a light-receiving faceplate to suppress crosstalk between channels.

    Substrate for growing gallium nitride compound-semiconductor device and light emitting diode
    29.
    发明授权
    Substrate for growing gallium nitride compound-semiconductor device and light emitting diode 失效
    用于生长氮化镓化合物 - 半导体器件和发光二极管的衬底

    公开(公告)号：US5122845A

    公开(公告)日：1992-06-16

    申请号：US484213

    申请日：1990-02-26

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

    IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

    CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/40

    摘要： A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga.sub.1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380.degree. to 800.degree. C. to have a thickness of 100 to 500 .ANG.. Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive). The layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.

    摘要翻译： 用于使用气态有机金属化合物在蓝宝石衬底上制造氮化镓化合物半导体（Al x Ga 1-x N; X = 0）的基板，以及通过使用该衬底制造的蓝色发光二极管。 在蓝宝石衬底上形成包含氮化铝（AlN）并且具有以非晶态混合微晶或多晶体的晶体结构的缓冲层。 缓冲层在380〜800℃的生长温度下形成，厚度为100〜500。 此外，在缓冲层上形成氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）。 包含至少两层具有不同导电类型并依次层叠在缓冲层上的氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）包括层，用作发光层。 具有上述结构的缓冲层的存在大大有助于改进的氮化镓化合物半导体的高质量单晶。 另一方面，由于质量的提高，蓝色发光特性也得到改善。

    Light-emitting semiconductor device using group III nitrogen compound
    30.
    发明申请
    Light-emitting semiconductor device using group III nitrogen compound 审中-公开
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20110101412A1

    公开(公告)日：2011-05-05

    申请号：US12929231

    申请日：2011-01-10

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/32

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, on the N-layer, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+layer, doping Si and Zn into the emission layer, forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1, and forming a contact layer of a P-type conduction, on the P-type layer, the contact layer including gallium nitride.

    摘要翻译： 制造III族氮化物化合物的发光半导体器件的方法包括形成N型导电的N层，N层包括氮化镓，形成满足式（Al x Ga 1 -x3）y3In1-y3N，其中在N层上形成满足公式的III族氮化物化合物半导体的发射层Al x1Gay1In1，其中0和nlE; x3和nlE; 1,0和n1E; y3和nlE; 1和0＆lt; n1E; x3 + y3＆ -x1-y1N，其中0＆nlE; x1＆nlE; 1,0和nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE; 1在高载流子浓度层N +层上，将Si和Zn掺杂到发射层中，形成P层 在发射层上的P型导电，包含满足式Al x Ga 1-x 2 N的氮化铝镓的P层，其中0＆lt; n1E; x2＆nlE; 1，并且在P型上形成P型导电的接触层 层，接触层包括氮化镓。