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    Method and structure for creating cavities with extreme aspect ratios
    21.
    发明授权
    Method and structure for creating cavities with extreme aspect ratios 有权
    用于创建具有极高宽比的腔体的方法和结构

    公开(公告)号：US09136136B2

    公开(公告)日：2015-09-15

    申请号：US14031694

    申请日：2013-09-19

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann

    IPC: H01L21/306 ,  G01N33/487 ,  G01N27/414 ,  G01N27/447 ,  H01L29/06

    CPC classification number: B81C1/00619 ,  B81C1/00047 ,  B81C1/00476 ,  G01N27/414 ,  G01N27/4473 ,  G01N33/48721 ,  H01L21/30604 ,  H01L29/06

    Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

    Abstract translation: 实施例涉及用于更有效地和有效地蚀刻衬底和其它结构中的牺牲层和其它层的结构，系统和方法。 在实施例中，其中牺牲层被去除以例如形成空腔的衬底包括蚀刻分散体系统，其包括沟槽，沟道或其它结构，其中蚀刻气体或其它合适的气体，流体或物质可以流过其中 衬底并去除牺牲层。 沟槽，沟道或其它结构可以与形成在衬底中的开口或其他孔一起实现，例如靠近衬底的一个或多个边缘，以更快地将蚀刻气体或一些其它物质分散在衬底内。

    METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS
    22.
    发明申请
    METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS 有权
    用极端的方法创建CAVIITY的方法和结构

    公开(公告)号：US20150079787A1

    公开(公告)日：2015-03-19

    申请号：US14031694

    申请日：2013-09-19

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann

    IPC: H01L21/306 ,  H01L29/06

    CPC classification number: B81C1/00619 ,  B81C1/00047 ,  B81C1/00476 ,  G01N27/414 ,  G01N27/4473 ,  G01N33/48721 ,  H01L21/30604 ,  H01L29/06

    Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

    Abstract translation: 实施例涉及用于更有效地和有效地蚀刻衬底和其它结构中的牺牲层和其它层的结构，系统和方法。 在实施例中，其中牺牲层被去除以例如形成空腔的衬底包括蚀刻分散体系统，其包括沟槽，沟道或其它结构，其中蚀刻气体或其它合适的气体，流体或物质可以流过其中 衬底并去除牺牲层。 沟槽，沟道或其它结构可以与形成在衬底中的开口或其他孔一起实现，例如靠近衬底的一个或多个边缘，以更快地将蚀刻气体或一些其它物质分散在衬底内。

    Pressure sensor device and manufacturing method
    26.
    发明授权
    Pressure sensor device and manufacturing method 有权

    公开(公告)号：US10386255B2

    公开(公告)日：2019-08-20

    申请号：US15647360

    申请日：2017-07-12

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Marco Haubold ,  Andre Roeth ,  Maik Stegemann ,  Mirko Vogt

    IPC: G01L9/00 ,  G01L19/06 ,  G01L19/14

    Abstract: A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.

    Particle sensor and method for sensing particles in a fluid
    28.
    发明授权
    Particle sensor and method for sensing particles in a fluid 有权

    公开(公告)号：US10031062B2

    公开(公告)日：2018-07-24

    申请号：US15177404

    申请日：2016-06-09

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch

    IPC: G01N1/10 ,  G01N15/14

    Abstract: Various embodiments provide a particle sensor including: a first carrier, the first carrier including at least one heating structure and a light detecting structure, at least one spacer structure disposed over the first carrier, a second carrier disposed over the at least one spacer structure, the second carrier including a light emitting structure, wherein the first carrier, the second carrier and the at least one spacer structure are arranged to provide a channel for a fluid flow, wherein the light emitting structure is configured to emit light into the channel and wherein the light detecting structure is configured to detect light from the channel.

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