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公开(公告)号：US20200220068A1
公开(公告)日：2020-07-09
申请号：US16240317
申请日：2019-01-04
发明人： Pouya Hashemi , Bruce B. Doris , John A. Ott , Nathan P. Marchack
摘要： An ultra-small diameter and a tall bottom electrode for use in magnetic random access memory (MRAM) devices containing a multilayered MTJ pillar is provided. The bottom electrode is formed by depositing a thick bottom electrode layer on a surface of a metallic etch stop layer. The bottom electrode layer is then patterned by lithography and etching to provide a bottom electrode structure. An angled ion beam etch is thereafter used to trim the bottom electrode structure into a bottom electrode having a high aspect ratio (on the order of 10:1 or greater).
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公开(公告)号：US10686124B2
公开(公告)日：2020-06-16
申请号：US16127384
申请日：2018-09-11
发明人： Chih-Chao Yang , Daniel C. Edelstein , Bruce B. Doris , Henry K. Utomo , Theodorus E. Standaert , Nathan P. Marchack
IPC分类号： H01L43/02 , H01L43/12 , H01L27/22 , H01L21/768 , H01L21/311 , H01L21/027
摘要： Back end of line (BEOL) metallization structures and methods generally includes forming a landing pad on an interconnect structure. A multilayer structure including layers of metals and at least one insulating layer are provided on the structure and completely cover the landing pad. The landing pad is a metal-filled via and has a width dimension that is smaller than the multilayer structure, or the multilayer structure and the underlying metal conductor in the interconnect structure. The landing pad metal-filled via can have a width dimension that is sub-lithographic.
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23.发明授权公开(公告)号：US10684246B2
公开(公告)日：2020-06-16
申请号：US15802802
申请日：2017-11-03
发明人： Hariklia Deligianni , Bruce B. Doris , Damon B. Farmer , Steven J. Holmes , Qinghuang Lin , Nathan P. Marchack , Deborah A. Neumayer , Roy R. Yu
IPC分类号： G01N27/327 , G01N27/48 , G01N33/94 , H01L21/768 , H01L23/48 , H01L23/528 , G01N33/543 , H01L27/15 , G01N33/487
摘要： Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.
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公开(公告)号：US20200094300A1
公开(公告)日：2020-03-26
申请号：US16695321
申请日：2019-11-26
摘要： A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.
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25.发明申请公开(公告)号：US20190189914A1
公开(公告)日：2019-06-20
申请号：US15841872
申请日：2017-12-14
摘要： A method of forming a semiconductor structure includes forming a first spacer material over two or more mandrels disposed over a magnetoresistive random-access memory (MRAM) stack. The method also includes performing a first sidewall image transfer of the two or more mandrels to form a first set of fins of the first spacer material over the MRAM stack, and performing a second sidewall image transfer to form a plurality of pillars of the first spacer material over the MRAM stack. The pillars of the first spacer material form top electrodes for a plurality of MRAM cells patterned from the MRAM stack.
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公开(公告)号：US10304692B1
公开(公告)日：2019-05-28
申请号：US15824175
申请日：2017-11-28
发明人： John C. Arnold , Robert L. Bruce , Sebastian U. Engelmann , Nathan P. Marchack , Hiroyuki Miyazoe , Jeffrey C. Shearer , Takefumi Suzuki
IPC分类号： H01L21/336 , H01L21/311 , H01L21/768 , H01L21/8234
摘要： A method of forming field effect transistor (FET) circuits, and forming Integrated Circuit (IC) chips with the FET circuits. After forming gate sidewall spacers, filling with insulation and planarizing to the top of the sidewall spacers, self-aligned source/drain contacts are etched through the insulation and said gate dielectric layer to source/drain regions. A combination fluoroether/hydrofluoroether-hydrofluorocarbon (*FE-HFC) plasma etch etches the source/drain contacts self-aligned. The self-aligned contacts are filled with conductive material, and FETs are wired together into circuits, connecting to FETs through the self-aligned contacts.
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公开(公告)号：US20190143095A1
公开(公告)日：2019-05-16
申请号：US15811023
申请日：2017-11-13
摘要： A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
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公开(公告)号：US10170698B2
公开(公告)日：2019-01-01
申请号：US15590545
申请日：2017-05-09
发明人： Anthony J. Annunziata , Armand A. Galan , Steve Holmes , Eric A. Joseph , Gen P. Lauer , Qinghuang Lin , Nathan P. Marchack
摘要： A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.
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公开(公告)号：US20180309053A1
公开(公告)日：2018-10-25
申请号：US16023090
申请日：2018-06-29
CPC分类号： H01L43/12 , G11C11/161 , H01L27/222 , H01L27/224 , H01L43/02 , H01L43/08
摘要： A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.
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公开(公告)号：US20180069174A1
公开(公告)日：2018-03-08
申请号：US15258265
申请日：2016-09-07
CPC分类号： H01L43/12 , H01F10/132 , H01L43/08
摘要： Methods for forming magnetic tunnel junctions and structures thereof include cryogenic etching the layers defining the magnetic tunnel junction without lateral diffusion of reactive species.
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