公开(公告)号：US20240222257A1

公开(公告)日：2024-07-04

申请号：US18089801

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Yiqun Bai ,  Dingying Xu ,  Bai Nie ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Rahul N. Manepalli ,  Brandon C. Marin ,  Jeremy D. Ecton

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/49894 ,  H01L21/481 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/15

Abstract: A substrate for an electronic system includes a glass core layer. The glass core layer includes a first surface and a second surface opposite the first surface; and at least one through-glass via (TGV) extending through the glass core layer from the first surface to the second surface. The TGV includes an opening filled with an electrically conductive material; and a via liner including a sidewall material disposed on a sidewall of the opening between the glass of the glass core layer and the electrically conductive material, wherein the sidewall material includes carbon.

公开(公告)号：US20240222210A1

公开(公告)日：2024-07-04

申请号：US18091548

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram ,  Gang Duan ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L23/15 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/15 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838

Abstract: An integrated circuit device substrate includes a first glass layer, a second glass layer, and a dielectric interface layer between the first glass layer and the second glass layer. A plurality of conductive pillars extend through the first glass layer, the dielectric layer and the second glass layer, wherein the conductive pillars taper from a first diameter in the dielectric layer to a second diameter in the first glass layer and the second glass layer, and wherein the first diameter is greater than the second diameter.

公开(公告)号：US20240213170A1

公开(公告)日：2024-06-27

申请号：US18086293

申请日：2022-12-21

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Yiqun Bai ,  Dingying Xu ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Ziyin Lin ,  Bai Nie ,  Kyle Jordan Arrington ,  Jeremy D. Ecton ,  Brandon C. Marin

IPC: H01L23/538 ,  H01L23/498 ,  H01L25/16 ,  H01L25/18 ,  H10B80/00

CPC classification number: H01L23/5389 ,  H01L23/49816 ,  H01L23/5386 ,  H01L25/16 ,  H01L25/18 ,  H10B80/00 ,  H01L24/13

Abstract: An electronic system includes a substrate and a top surface active component die. The substrate includes a glass core layer having a glass core layer active component die disposed in a cavity and a discrete passive component disposed in another cavity; a mold layer including a mold layer active component die disposed in the mold layer; and a buildup layer contacting a top surface of the glass core layer and a bottom surface of the mold layer. The buildup layer includes electrically conductive interconnect connecting the glass core layer active component die, the discrete passive component, and the mold layer active component die. The top surface of the component die is electrically connected to the mold layer active component die.

公开(公告)号：US20240186228A1

公开(公告)日：2024-06-06

申请号：US18061237

申请日：2022-12-02

Applicant: Intel Corporation

Inventor： Haobo Chen ,  Bohan Shan ,  Kyle J. Arrington ,  Yiqun Bai ,  Kristof Darmawikarta ,  Gang Duan ,  Jeremy D. Ecton ,  Hongxia Feng ,  Xiaoying Guo ,  Ziyin Lin ,  Brandon Christian Marin ,  Bai Nie ,  Srinivas V. Pietambaram ,  Dingying Xu

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L21/486 ,  H01L23/49827

Abstract: In one embodiment, an integrated circuit package substrate includes a core layer comprising a dielectric material and a plurality of metal vias within the core layer. The dielectric material includes Silicon, Oxygen, and at least one of Boron or Phosphorus. The metal vias electrically couple a first side of the core layer and a second side of the core layer opposite the first side. The package substrate further includes a plurality of build-up layers on the core layer, the build-up layers comprising metal vias electrically connected to the metal vias of the core layer.

公开(公告)号：US20230317619A1

公开(公告)日：2023-10-05

申请号：US17711978

申请日：2022-04-01

Applicant: Intel Corporation

Inventor： Ravindranath V. Mahajan ,  Srikant Nekkanty ,  Srinivas V. Pietambaram ,  Veronica Strong ,  Xiao Lu ,  Tarek A. Ibrahim ,  Karumbu Nathan Meyyappan ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L23/5381 ,  H01L21/486 ,  H01L23/5384

Abstract: A microelectronic structure, a semiconductor package including the same, and a method of forming same. The microelectronic structures includes: a substrate defining a cavity therein; a bridge die within the cavity, the bridge die to electrically couple a pair of dies to be provided on a surface of the substrate; an electrical coupling layer between a top surface of the cavity and a bottom surface of the bridge die. The electrical coupling layer includes: a non-conductive component including a die bonding film and defining holes therein; and electrically conductive structures in the holes, the electrically conductive structures electrically coupling the substrate with the bridge die.

公开(公告)号：US20230087367A1

公开(公告)日：2023-03-23

申请号：US17481506

申请日：2021-09-22

Applicant: Intel Corporation

Inventor： Xiaoxuan Sun ,  Omkar G. Karhade ,  Dingying Xu ,  Sairam Agraharam ,  Xavier Francois Brun

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/538 ,  H01L23/31

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.

公开(公告)号：US09458283B2

公开(公告)日：2016-10-04

申请号：US14746750

申请日：2015-06-22

Applicant: INTEL CORPORATION

Inventor： Dingying Xu ,  Nisha Ananthakrishnan ,  Hong Dong ,  Rahul N. Manepalli ,  Nachiket R. Raravikar ,  Gregory S. Constable

IPC: C08G77/04 ,  C08L63/00 ,  B32B27/38 ,  C08G59/02 ,  C08L23/08 ,  H01L21/56 ,  H01L23/29 ,  C08G59/32 ,  C08G59/38 ,  C07F7/08 ,  H01L23/00

CPC classification number: C08G59/02 ,  C07F7/0838 ,  C08G59/3254 ,  C08G59/38 ,  C08L23/0884 ,  H01L21/563 ,  H01L23/293 ,  H01L24/16 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3512 ,  Y10T428/31515 ,  H01L2924/00 ,  H01L2224/05599

Abstract: Underfill materials for fabricating electronic devices are described. One embodiment includes an underfill composition including an epoxy mixture, an amine hardener component, and a filler. The epoxy mixture may include a first epoxy comprising a bisphenol epoxy, a second epoxy comprising a multifunctional epoxy, and a third epoxy comprising an aliphatic epoxy, the aliphatic epoxy comprising a silicone epoxy. The first, second, and third epoxies each have a different chemical structure. Other embodiments are described and claimed.

公开(公告)号：US12230564B2

公开(公告)日：2025-02-18

申请号：US17345912

申请日：2021-06-11

Applicant: Intel Corporation

Inventor： Brandon Christian Marin ,  Tarek A. Ibrahim ,  Karumbu Nathan Meyyappan ,  Valery Ouvarov-Bancalero ,  Dingying Xu

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: A z-disaggregated integrated circuit package substrate assembly comprises a first substrate component (a coreless patch), a second substrate component (a core patch), and a third substrate component (an interposer). The coreless patch comprises thinner dielectric layers and higher density routing and can comprise an embedded bridge to allow for communication between integrated circuit dies attached to the coreless patch. The core layer acts as a middle layer interconnect between the coreless patch and the interposer and comprises liquid metal interconnects to connect the core patch physically and electrically to the coreless patch and the interposer. Core patch through holes comprise liquid metal plugs. Some through holes can be surrounded by and coaxially aligned with magnetic plugs to provide improved power signal delivery. The interposer comprises thicker dielectric layers and lower density routing. The substrate assembly can reduce cost and provide improved overall yield and electrical performance relative to monolithic substrates.

公开(公告)号：US20240264530A1

公开(公告)日：2024-08-08

申请号：US18147472

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Ryan Carrazzone ,  Kyle Arrington ,  Brandon Rawlings ,  Bohan Shan ,  Dingying Xu

IPC: G03F7/16 ,  C08G75/20 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/168 ,  C08G75/20 ,  G03F7/038 ,  G03F7/039

Abstract: Light responsive photoresists, and methods of using light responsive photoresists in processes, such as lithography processes. The light responsive photoresists may include a polymer featuring a photocleavable group. Due to the photocleavable group, the polymer may depolymerize when irradiated with one or more wavelengths of light. The depolymerized products may be in the gas phase.

公开(公告)号：US20240222243A1

公开(公告)日：2024-07-04

申请号：US18091555

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram ,  Gang Duan ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/15

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/16 ,  H01L2224/16227

Abstract: An integrated circuit device substrate includes a first glass layer with a redistribution layer mounting region and an integrated circuit device mounting region, wherein a first major surface of the first glass layer is overlain by a first dielectric layer, and wherein the first glass layer includes a first plurality of conductive pillars. A second glass layer is on the redistribution layer mounting region on the first glass layer, wherein the second glass layer includes a second dielectric layer on a second major surface thereof, and wherein the second dielectric layer is bonded to the first dielectric layer on the first major surface of the first glass layer, the second glass layer including a second plurality of conductive pillars electrically interconnected with the first plurality of conductive pillars in the first glass layer.