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21.发明授权Spread spectrum clock generator and method for generating a spread spectrum clock signal 有权扩频时钟发生器和产生扩频时钟信号的方法公开(公告)号：US07558311B2
公开(公告)日：2009-07-07
申请号：US11205014
申请日：2005-08-17
申请人： Jong-shin Shin , Duck-hyun Chang , Ji-young Kim , Myoung-bo Kwak , Il-won Seo , Jae-Hyun Park , Hyun-goo Kim , Chi-won Kim
发明人： Jong-shin Shin , Duck-hyun Chang , Ji-young Kim , Myoung-bo Kwak , Il-won Seo , Jae-Hyun Park , Hyun-goo Kim , Chi-won Kim
IPC分类号： H04B1/00
CPC分类号： H03L7/18 , H03B23/00 , H03L7/0891
摘要： A spread spectrum clock generator (SSCG) and method of generating a spread spectrum clock (SSC) signal, in which the SSCG may include a controller outputting a given modulation voltage signal based on a difference between an average frequency of a first feedback signal and a comparison frequency signal input thereto, or based on comparison in total phase variations between a second feedback signal and the comparison frequency signal, and a sub-system for generating a first control voltage as a function of an input reference frequency signal and a second feedback signal input thereto. An adder may add the first control voltage signal and the modulation voltage signal to generate a second control voltage signal, and a voltage control oscillator (VCO) may generate the SSC signal based on the second control voltage signal.
摘要翻译： 扩展频谱时钟发生器（SSCG）和产生扩频时钟（SSC）信号的方法，其中，SSCG可以包括控制器，该控制器基于第一反馈信号的平均频率和 或者基于第二反馈信号和比较频率信号之间的总相位变化的比较，以及用于产生作为输入参考频率信号和第二反馈信号的函数的第一控制电压的子系统 输入。 加法器可以添加第一控制电压信号和调制电压信号以产生第二控制电压信号，并且压控振荡器（VCO）可以基于第二控制电压信号产生SSC信号。
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22.发明授权公开(公告)号：US07521706B2
公开(公告)日：2009-04-21
申请号：US10942187
申请日：2004-09-16
CPC分类号： H01L45/06 , H01L45/122 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1666
摘要： Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode hole in the heating electrode. A phase change material pattern is provided in the electrode hole and contacts a sidewall of the electrode hole. In some embodiments, the electrode hole extends through the heating electrode. In some embodiments, the phase changeable material pattern only contacts the electrode at a sidewall of the electrode hole.
摘要翻译： 提供了相变存储器件和制造包括设置在基板上的加热电极的相变存储器件的方法。 加热电极在加热电极中包括电极孔。 在电极孔中设置相变材料图案，并与电极孔的侧壁接触。 在一些实施例中，电极孔延伸穿过加热电极。 在一些实施例中，相变材料图案仅在电极孔的侧壁处接触电极。
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23.发明申请METHOD AND APPARATUS FOR CONFIGURING CHANNEL NODE TREE IN AN OFDMA WIRELESS COMMUNICATION SYSTEM 有权用于在OFDMA无线通信系统中配置通道节点树的方法和装置公开(公告)号：US20080095074A1
公开(公告)日：2008-04-24
申请号：US11923312
申请日：2007-10-24
申请人： Hwan-Joon KWON , Jae-Chon Yu , Dong-Hee Kim , Jae-Hyun Park , Jin-Kyu Han
发明人： Hwan-Joon KWON , Jae-Chon Yu , Dong-Hee Kim , Jae-Hyun Park , Jin-Kyu Han
IPC分类号： H04L12/44
CPC分类号： H04L5/023 , H04L27/2602
摘要： A method and apparatus for configuring a channel node tree in an OFDMA wireless communication system are provided, in which as many DRCH nodes as the number of DRCHs used for a frame are configured at base nodes, as many BRCHs as the number of DRCHs are selected from among BRCHs used for the frame, BRCH nodes with unselected BRCHs are configured at base nodes, and upper nodes are configured using the base nodes corresponding to the DRCH nodes and the BRCH nodes.
摘要翻译： 提供了一种用于在OFDMA无线通信系统中配置信道节点树的方法和装置，其中在基站节点处配置与用于帧的DRCH的数量一样多的DRCH节点，与选择的DRCH的数量一样多的BRCH 从用于该帧的BRCH中，具有未选择的BRCH的BRCH节点被配置在基本节点处，并且使用与DRCH节点和BRCH节点相对应的基本节点来配置上位节点。
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公开(公告)号：US07339185B2
公开(公告)日：2008-03-04
申请号：US11149755
申请日：2005-06-10
申请人： Yoon-Jong Song , Se-Ho Lee , Ki-Nam Kim , Su-Youn Lee , Jae-Hyun Park
发明人： Yoon-Jong Song , Se-Ho Lee , Ki-Nam Kim , Su-Youn Lee , Jae-Hyun Park
CPC分类号： H01L45/06 , G11C2213/52 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/1683 , Y10S438/90
摘要： A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.
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公开(公告)号：US20060237756A1
公开(公告)日：2006-10-26
申请号：US11392310
申请日：2006-03-28
申请人： Jae-Hyun Park , Jae-Hee Oh , Se-Ho Lee , Won-Cheol Jeong
发明人： Jae-Hyun Park , Jae-Hee Oh , Se-Ho Lee , Won-Cheol Jeong
IPC分类号： H01L29/94
CPC分类号： H01L45/144 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1666
摘要： In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A hole penetrates the first interlayer insulating layer. A first and a second semiconductor pattern are sequentially stacked in a lower region of the hole. A cell electrode is provided on the second semiconductor pattern. The cell electrode has a lower surface than a top surface of the first interlayer insulating layer. A confined phase change material pattern fills the hole on the cell electrode. An upper electrode is disposed on the phase change material pattern. The phase change material pattern in the hole is self-aligned with the first and second semiconductor patterns by the hole. A method of fabricating the phase change memory device is also provided.
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26.发明申请Methods of operating magnetic random access memory device using spin injection and related devices 有权使用自旋注入和相关器件操作磁性随机存取存储器件的方法公开(公告)号：US20060034117A1
公开(公告)日：2006-02-16
申请号：US11201495
申请日：2005-08-11
申请人： Won-Cheol Jeong , Ki-Nam Kim , Hong-Sik Jeong , Gi-Tae Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Ki-Nam Kim , Hong-Sik Jeong , Gi-Tae Jeong , Jae-Hyun Park
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.
摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。
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27.发明申请公开(公告)号：US20060011959A1
公开(公告)日：2006-01-19
申请号：US11184701
申请日：2005-07-19
申请人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong
发明人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong
IPC分类号： H01L29/94 , H01L21/4763 , H01L21/461
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/0004 , G11C2213/79 , H01L21/76819 , H01L27/228 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer are sequentially stacked to surround sidewalls of the at least one phase-change pattern. An interconnection layer pattern is disposed on the planarized capping layer, the planarized protecting layer, and the planarized insulating layer. The interconnection layer pattern is in contact with the phase-change pattern.
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28.发明申请Beta-catenin oligonucleotide microchip and method for detecting beta-catenin mutations employing same 有权β-连环蛋白寡核苷酸微芯片和使用其检测β-连环蛋白突变的方法公开(公告)号：US20050176016A1
公开(公告)日：2005-08-11
申请号：US10659583
申请日：2003-09-09
申请人： Jae-Gahb Park , Il-Jin Kim , Hio-Chung Kang , Jae-Hyun Park
发明人： Jae-Gahb Park , Il-Jin Kim , Hio-Chung Kang , Jae-Hyun Park
CPC分类号： C12Q1/6886 , C12Q1/6837 , C12Q2600/156
摘要： The present invention relates to a β-catenin oligonucleotide microchip for detecting mutation in the mutational hot spot regions of β-catenin gene, a manufacturing process thereof and a method for detecting the β-catenin mutation employing same, wherein specific oligonucleotides are selectively designed to detect various missense mutations and in-frame deletion at the mutational hot spots of β-catenin gene. The β-catenin oligo chip of the present invention can be used in studies to detect β-catenin mutations and unravel the signal transduction mechanism and tumorigenesis related to β-catenin gene.
摘要翻译： 本发明涉及用于检测β-连环蛋白基因的突变热点区域中的突变的β-连环蛋白寡核苷酸微芯片，其制备方法和使用其的β-连环蛋白突变检测方法，其中特异性寡核苷酸被选择性地设计成 在β-连环蛋白基因的突变热点检测各种错义突变和帧内缺失。 本发明的β-连环蛋白寡核苷酸芯片可用于检测β-连环蛋白突变和揭示与β-连环蛋白基因相关的信号转导机制和肿瘤发生的研究。
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29.发明申请Memory devices having sharp-tipped phase change layer patterns and methods of forming the same 有权具有尖锐相变层图案的存储器件及其形成方法公开(公告)号：US20050139816A1
公开(公告)日：2005-06-30
申请号：US11018643
申请日：2004-12-21
CPC分类号： H01L45/06 , H01L45/122 , H01L45/1273 , H01L45/144 , H01L45/1675
摘要： Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.
摘要翻译： 相变随机存取存储器（PRAM）器件包括衬底和衬底上的相变层图案。 相变层图案包括尖锐的尖端和至少一个壁，该壁从尖锐的尖端沿远离衬底的方向延伸。 提供了与尖锐尖端相邻的相变材料图案的至少一个接触孔节点。
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30.发明申请公开(公告)号：US20050110983A1
公开(公告)日：2005-05-26
申请号：US10942187
申请日：2004-09-16
IPC分类号： H01L27/105 , G01C1/10 , G11C11/56 , G11C13/00 , H01L27/10 , H01L27/108 , H01L45/00
CPC分类号： H01L45/06 , H01L45/122 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1666
摘要： Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode hole in the heating electrode. A phase change material pattern is provided in the electrode hole and contacts a sidewall of the electrode hole. In some embodiments, the electrode hole extends through the heating electrode. In some embodiments, the phase changeable material pattern only contacts the electrode at a sidewall of the electrode hole
摘要翻译： 提供了相变存储器件和制造包括设置在基板上的加热电极的相变存储器件的方法。 加热电极在加热电极中包括电极孔。 在电极孔中设置相变材料图案，并与电极孔的侧壁接触。 在一些实施例中，电极孔延伸穿过加热电极。 在一些实施例中，相变材料图案仅在电极孔的侧壁处接触电极
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