公开(公告)号：US20110045619A1

公开(公告)日：2011-02-24

申请号：US12587291

申请日：2009-10-05

申请人： Peiching Ling

发明人： Peiching Ling

IPC分类号： H01L33/50 ,  H01L33/56

CPC分类号： H05B33/10 ,  C09K11/02 ,  C09K11/7774 ,  C23C24/06 ,  C23C24/08 ,  H01L33/507 ,  H01L33/508 ,  H01L2933/0041

摘要： A method for forming wavelength-conversion LED encapsulant structure includes forming an LED encapsulant structure body, forming a layer of a wavelength-conversion material on a first surface, disposing the first surface to cause the wavelength-conversion material to be in contact with a surface region of the LED encapsulant structure body, applying a pressure between the first surface and the surface region of the LED encapsulant structure body, and causing at least a portion of the wavelength-conversion material to be at least partially embedded in the surface region of the LED encapsulant structure body.

摘要翻译： 用于形成波长转换LED密封剂结构的方法包括形成LED密封结构体，在第一表面上形成波长转换材料层，设置第一表面以使波长转换材料与表面接触 区域，在所述LED密封结构体的所述第一表面和所述表面区域之间施加压力，并且使所述波长转换材料的至少一部分至少部分地嵌入所述LED封装结构体的表面区域中; LED密封结构体。

公开(公告)号：US5763319A

公开(公告)日：1998-06-09

申请号：US656273

申请日：1996-06-05

申请人： Peiching Ling ,  Tien Tien

发明人： Peiching Ling ,  Tien Tien

IPC分类号： H01L29/78 ,  C23C14/48 ,  H01L21/04 ,  H01L21/223 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/167

CPC分类号： H01L29/6659 ,  C23C14/48 ,  H01L21/0415 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2656 ,  H01L21/2658 ,  H01L29/0847 ,  H01L29/167 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L29/7833

摘要： A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound represented by the symbol E1.sub.x Ed.sub.y, where E1 represents an element having high solubility in the substrate material with minimal detrimental chemical or electrical effects and can be the same element as the substrate element, Ed (dopant element) represents an element which is an electron acceptor or donor having high solubility limit in the substrate material, and x and y indicate the number of respective E1 and Ed atoms in the ion compound.

摘要翻译： PCT No.PCT / US96 / 00732 Sec。 371日期：1996年6月5日 102（e）1996年6月5日PCT 1996年1月19日PCT PCT。 公开号WO97 / 07534 日期1997年2月27日一种制造浅掺杂半导体器件的方法。 在优选实施例中，该方法包括以下步骤：（a）提供衬底，其中衬底材料由符号Es（衬底的元件）表示; 和（b）用由符号E1xEdy表示的离子化合物注入衬底，其中E1表示在衬底材料中具有高溶解度的元素，具有最小的不利的化学或电学效应，并且可以与衬底元素Ed（掺杂剂）相同的元素 元素）表示作为在基板材料中具有高溶解度极限的电子受体或供体的元素，x和y表示离子化合物中相应的E1和Ed原子的数目。

公开(公告)号：US5576680A

公开(公告)日：1996-11-19

申请号：US203991

申请日：1994-03-01

申请人： Peiching Ling

发明人： Peiching Ling

IPC分类号： H01F17/00 ,  H01F41/04 ,  H01L21/02 ,  H01F5/00

CPC分类号： H01L28/10 ,  H01F17/0033 ,  H01F41/041 ,  H01F41/046 ,  H01L23/60 ,  H01F2017/0086 ,  H01L2924/0002

摘要： The present invention discloses an inductive circuit. The inductive circuit is fabricated on a semiconductor chip including a substrate layer and a dielectric layer. The inductive circuit includes an inductive core composed of high magnetic susceptible material (HMSM) surrounded by an dielectric layer. The dielectric layer which surrounds the inductive core is further surrounded by a conductive line which includes the bottom conductive lines the conductive lines in the `vias` through the surrounding dielectric layer and the top conductive lines. The conductive lines are patterned by employing IC fabrication processes. Thus the inductive core, the dielectric layer surrounding the inductive core, and the surrounding conductive line form an inductive circuit and the inductive circuit is formed on the semi-conductor chip which includes the substrate a layer and a dieletric layer.

摘要翻译： 本发明公开了一种感应电路。 感应电路制造在包括基底层和电介质层的半导体芯片上。 感应电路包括由介电层包围的高磁敏材料（HMSM）构成的感应磁芯。 围绕感应芯的电介质层进一步被导线包围，该导线包括底部导线，通过周围电介质层和顶部导线的“通路”中的导线。 通过采用IC制造工艺对导线进行图案化。 因此，感应芯，围绕感应芯的电介质层和周围的导电线形成感应电路，并且感应电路形成在包括衬底层和半导体层的半导体芯片上。

公开(公告)号：US09480125B2

公开(公告)日：2016-10-25

申请号：US13704788

申请日：2011-06-17

申请人： Peiching Ling ,  Dezhong Liu

发明人： Peiching Ling ,  Dezhong Liu

IPC分类号： H05B33/10 ,  H05B33/12 ,  H01L33/50

CPC分类号： H05B33/10 ,  H01L33/501 ,  H01L33/508 ,  H01L2933/0041 ,  H05B33/12

摘要： A light-emitting structure and a method of fabricating the light-emitting structure. The method includes covering an LED die provided on a carrier with a uniform phosphor layer, with an accommodation space constituted by the carrier and the uniform phosphor layer; and forming in the accommodation space a first light-pervious body such that the uniform phosphor layer in various shapes is formed on the LED die. The light-emitting structure thus fabricated has excellent optical property.

摘要翻译： 发光结构和制造发光结构的方法。 该方法包括：具有均匀荧光体层的载体上设置的具有由载体和均匀荧光体层构成的容纳空间的LED管芯; 并且在所述容纳空间中形成第一可透光体，使得在所述LED管芯上形成各种形状的均匀荧光体层。 由此制造的发光结构具有优异的光学性能。

公开(公告)号：US20160218263A1

公开(公告)日：2016-07-28

申请号：US15004058

申请日：2016-01-22

申请人： Peiching Ling

发明人： Peiching Ling ,  Dezhong Liu

IPC分类号： H01L33/62 ,  H01L33/50 ,  H01L33/00 ,  H01L21/683 ,  H01L33/44 ,  H01L33/64 ,  H01L33/54

CPC分类号： H01L33/62 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L33/44 ,  H01L33/486 ,  H01L33/54 ,  H01L33/64 ,  H01L2224/04105 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73267 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/18162 ,  H01L2924/18165 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2224/83

摘要： A package structure is provided, which includes a light emitting element having opposite first and second sides, a coating body combined with side faces of the light emitting element, a fluorescent layer disposed on the second side, and a metal structure disposed on the first side. As the coating body is in contact with and combined with the side faces of the light emitting element, light will not be emitted from the side faces of the light emitting element. Therefore, the heat generated is reduced, and issues such as yellowing of the encapsulant and poor luminous efficiency due to overheating of the fluorescent powder are avoided. Further, the metal structure enhances the heat dissipation. A method for manufacturing the package structure is also provided.

摘要翻译： 提供了一种封装结构，其包括具有相对的第一和第二侧的发光元件，与发光元件的侧面结合的涂层体，设置在第二侧上的荧光层和设置在第一侧上的金属结构 。 当涂层体与发光元件的侧面接触并与其组合时，光不会从发光元件的侧面发射。 因此，减少了产生的热量，避免了由于荧光粉过热引起的密封剂变黄和发光效率差等问题。 此外，金属结构增强了散热。 还提供了一种用于制造封装结构的方法。

公开(公告)号：US08994050B2

公开(公告)日：2015-03-31

申请号：US13083741

申请日：2011-04-11

申请人： Peiching Ling

发明人： Peiching Ling

IPC分类号： H01L33/50

CPC分类号： H01L33/505 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2933/0041 ,  H01L2924/00014

摘要： A method of transferring a uniform phosphor layer on an article and a light-emitting structure having a uniform phosphor layer. The method includes disposing a surface of the article in a proximity of a carrier having the uniform phosphor layer on a surface thereon, and causing the uniform phosphor layer to be secured to the surface of the article. Therefore, the uniform phosphor layer is secured to the articles according to a contour of the article.

摘要翻译： 在物品和具有均匀磷光体层的发光结构上转印均匀荧光体层的方法。 该方法包括将物品的表面设置在其上的表面上具有均匀磷光体层的载体附近，并使均匀的磷光体层固定到物品的表面。 因此，根据制品的轮廓将均匀的磷光体层固定在物品上。

公开(公告)号：US20130214315A1

公开(公告)日：2013-08-22

申请号：US13401347

申请日：2012-02-21

申请人： Peiching Ling ,  Vivek B. Dutta

发明人： Peiching Ling ,  Vivek B. Dutta

IPC分类号： H01L33/62 ,  H01L51/56

CPC分类号： H01L33/62 ,  H01L33/005 ,  H01L33/486 ,  H01L33/507 ,  H01L33/647 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode package and a method of fabricating the same. The package includes a light emitting diode chip having a first surface and a second surface opposing the first surface, a metal frame (or TAB tape) having leads connected to the light emitting diode chip, and a light-previous encapsulant encapsulating the light emitting diode chip, wherein the second surface of the chip is exposed from the first light-previous encapsulant. The metal frame (or TAB tape) connects the light emitting diode chip to an external circuit board. The LED package does not need wire-bonding process. A method of fabricating a light emitting diode package is also provided.

摘要翻译： 发光二极管封装及其制造方法。 该封装包括具有与第一表面相对的第一表面和第二表面的发光二极管芯片，具有连接到发光二极管芯片的引线的金属框架（或TAB带）和封装发光二极管的先前封装材料 芯片，其中芯片的第二表面从第一光前密封剂暴露。 金属框架（或TAB带）将发光二极管芯片连接到外部电路板。 LED封装不需要引线接合工艺。 还提供了一种制造发光二极管封装的方法。

公开(公告)号：US08323748B2

公开(公告)日：2012-12-04

申请号：US12587290

申请日：2009-10-05

申请人： Peiching Ling

发明人： Peiching Ling

IPC分类号： B05D1/04 ,  B05D1/06

CPC分类号： H05B33/10 ,  C09K11/02 ,  C09K11/7774 ,  C23C24/06 ,  C23C24/08 ,  H01L33/507 ,  H01L33/508 ,  H01L2933/0041

摘要： A method for forming a layer of an LED phosphor material includes disposing a first surface in a proximity of a powder that includes an LED phosphor material, forming electrostatic charges on the first surface, and forming a layer of the LED phosphor material on the first surface at least partially by using the electrostatic charges. In an embodiment, the method includes disposing the first surface in an interior of a chamber and forming an airborne distribution of the powder in the interior of the chamber in a vicinity of the first surface. In another embodiment, the method includes providing a reservoir of the powder and applying to said phosphor powder an electrostatic charge opposite to that of said electrostatic charge on the first surface.

摘要翻译： 一种形成LED荧光体材料层的方法包括：在包括LED荧光体材料的粉末附近设置第一表面，在第一表面上形成静电荷，并在第一表面上形成LED荧光体材料层 至少部分地通过使用静电电荷。 在一个实施例中，该方法包括将第一表面设置在腔室的内部，并且在第一表面附近在腔室的内部形成粉末的空气分布。 在另一个实施方案中，该方法包括提供粉末储存器并向所述荧光体粉末施加与第一表面上的静电电荷相反的静电电荷。

公开(公告)号：US08247248B2

公开(公告)日：2012-08-21

申请号：US12587281

申请日：2009-10-05

申请人： Peiching Ling

发明人： Peiching Ling

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H05B33/10 ,  C09K11/02 ,  C09K11/7774 ,  C23C24/06 ,  C23C24/08 ,  H01L33/507 ,  H01L33/508 ,  H01L2933/0041

摘要： A method for forming a layer of phosphor material on an LED encapsulant structure includes forming a layer of a phosphor material on a first surface, disposing the first surface to cause the phosphor material to be in contact with a surface of the LED encapsulant structure, applying a pressure between the first surface and the surface of the LED encapsulant structure, and causing the layer of the phosphor material to be attached to the LED encapsulant structure.

摘要翻译： 一种在LED封装结构上形成磷光体材料层的方法包括在第一表面上形成荧光材料层，设置第一表面以使荧光体材料与LED封装结构的表面接触，施加 在LED封装结构的第一表面和表面之间的压力，并且使磷光体材料的层附着到LED密封剂结构。

公开(公告)号：US06323110B2

公开(公告)日：2001-11-27

申请号：US09755745

申请日：2001-01-04

申请人： Peiching Ling

发明人： Peiching Ling

IPC分类号： H01L2130

CPC分类号： H01L21/76243 ,  H01L21/76256 ,  Y10S148/012 ,  Y10S438/977

摘要： The present invention discloses a wafer which includes a semiconductor substrate having a top surface and a device layer disposed near the top surface for fabrication of integrated circuits (ICs) therein. The wafer also includes an insulating layer beneath the device layer for insulating the device layer with the ICs to be fabricated therein. The wafer further includes a doped region in the substrate. The doped region may be a layer beneath the insulating layer. The doped region is a region of sufficient volume whereby the doped region may be used as a charge sink for protecting the IC devices to be fabricated on the device layer from being damaged by the electric static discharge (ESD) and electric over stress (EOS). Furthermore, the doped region is a region of sufficient dopant concentration whereby the doped region may be used as an electrical connecting means for the IC devices to be fabricated in the device layer such that the doped region becomes a part of integration of the IC devices.

摘要翻译： 本发明公开了一种晶片，其包括具有顶表面的半导体衬底和设置在顶表面附近的用于在其中制造集成电路（IC）的器件层。 晶片还包括在器件层下面的绝缘层，用于将器件层与要在其中制造的IC绝缘。 晶片还包括衬底中的掺杂区域。 掺杂区域可以是绝缘层下面的层。 掺杂区域是足够体积的区域，由此掺杂区域可以用作用于保护要在器件层上制造的IC器件免受电静电放电（ESD）和电过压（EOS）损害的电荷宿， 。 此外，掺杂区域是足够掺杂剂浓度的区域，由此掺杂区域可以用作用于在器件层中制造的IC器件的电连接装置，使得掺杂区域成为IC器件的集成的一部分。