公开(公告)号：US20060204525A1

公开(公告)日：2006-09-14

申请号：US11248081

申请日：2005-10-12

Applicant: Richard Rest ,  Michael Karin ,  Jin Park

Inventor： Richard Rest ,  Michael Karin ,  Jin Park

IPC: A61K39/07 ,  A61K38/16

CPC classification number: A61K39/07

Abstract: Compounds, methods for identifying compounds and methods for using compounds which modulate interaction of lethal factor and anthrolysin O in the treatment and prevention of anthrax diseases are provided.

公开(公告)号：US20060149312A1

公开(公告)日：2006-07-06

申请号：US11026308

申请日：2004-12-30

Applicant: Edward Arguello ,  Jin Park ,  Huisan Wang ,  Lalith Wijeratne ,  Christopher Widenhouse

Inventor： Edward Arguello ,  Jin Park ,  Huisan Wang ,  Lalith Wijeratne ,  Christopher Widenhouse

IPC: A61M29/00

CPC classification number: A61F2/013 ,  A61F2002/018 ,  A61F2230/0006 ,  A61F2230/005 ,  A61F2230/0067 ,  A61F2230/008 ,  A61F2230/0093

Abstract: In accordance with the present invention, a distal protection and embolic material retrieval device with improved apposition to both large and small vessel walls of varying geometries for enhancing the filtering of embolic material during intravascular procedures while allowing for the passage of blood is provided. The device includes a filter basket designed to maximize apposition of the filtering portion to that of the vessel wall and may include struts which provide circumferential support to the filtering membrane and thereby minimizing or eliminating in-folding of the filter basket. Thin film materials may also be utilized for the filtering membrane of the filter basket. In addition one can incorporate biological and/or pharmaceutical agents in combination with the present invention.

Abstract translation: 根据本发明，提供一种远程保护和栓塞材料回收装置，其具有改进的与不同几何形状的大血管壁和小血管壁的相适应，用于在血管内手术期间增强血栓过程中的过滤，同时允许血液通过。 该装置包括过滤篮，该过滤篮设计成使过滤部分最大程度地与容器壁的配合最大化，并且可以包括为过滤膜提供圆周支撑并由此最小化或消除过滤篮的折叠的支柱。 薄膜材料也可用于过滤篮的过滤膜。 此外，可以结合本发明并入生物和/或药剂。

公开(公告)号：US20060105882A1

公开(公告)日：2006-05-18

申请号：US11264853

申请日：2005-11-02

Applicant: Jong Park ,  Hyeog Lee ,  Jin Park ,  Byung Shin

Inventor： Jong Park ,  Hyeog Lee ,  Jin Park ,  Byung Shin

IPC: F16H47/08 ,  F16H61/26

CPC classification number: F16H61/061 ,  F16H61/0206 ,  F16H2061/0253 ,  Y10T477/6936 ,  Y10T477/6937

Abstract: A hydraulic control system of an automatic transmission that precisely control is operating hydraulic pressure supplied to a frictional element during shifting and can eliminate oil leak under a maximum operating hydraulic pressure. The hydraulic control system controls a hydraulic pressure generated by a hydraulic pump to from an operating hydraulic pressure for a frictional element selectively operating at each shift ratio. A hydraulic line is configured such that the operating hydraulic pressure of the frictional element is controlled by a pressure control valve and a switching valve that are controlled by a solenoid valve. An exhaust hydraulic line of the pressure control valve is connected to an exhaust hydraulic line of the switching valve such that the exhaust hydraulic line of the pressure control valve can be controlled by a switching of the switching valve.

Abstract translation: 精密控制的自动变速器的液压控制系统在变速期间提供给摩擦元件的液压操作，并且可以在最大工作液压下消除油泄漏。 液压控制系统控制由液压泵产生的液压，以从用于在每个换档比选择性地运行的摩擦元件的操作液压。 液压管路构造成使得摩擦元件的操作液压由通过电磁阀控制的压力控制阀和切换阀来控制。 压力控制阀的排气液压管线连接到切换阀的排气液压管线，使得可以通过切换阀的切换来控制压力控制阀的排气液压管路。

公开(公告)号：US20060054917A1

公开(公告)日：2006-03-16

申请号：US10998922

申请日：2004-11-30

Applicant: Jae Lee ,  Jeong Oh ,  Jin Park

Inventor： Jae Lee ,  Jeong Oh ,  Jin Park

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/14

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Abstract translation: 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层 在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

公开(公告)号：US20060050594A1

公开(公告)日：2006-03-09

申请号：US11011725

申请日：2004-12-14

Applicant: Jin Park

Inventor： Jin Park

IPC: G11C8/00

CPC classification number: G11C16/16

Abstract: A flash memory device and method of erasing flash memory cells thereof are provided. The erase of a cell block unit or a page unit is effected by a word line switch included in a predecoder according to a page erase signal. If the erase is effected in the cell block unit, all word lines of one cell block are made to keep 0V. Meanwhile, if the erase is effected in the page unit, only word lines of a corresponding page are made to keep 0V and the remaining word lines are made floated, so that the erase is not performed. Accordingly, the erase can be carried out in the cell block unit or the page unit. It is thus possible to improve efficiency of data management.

Abstract translation: 提供了一种闪速存储器件及其擦除闪存单元的方法。 单元块单元或页单元的擦除由包含在根据页擦除信号的预解码器中的字线开关来实现。 如果在单元块单元中进行擦除，则使一个单元块的所有字线保持0V。 同时，如果在页面单元中进行擦除，则仅使对应页面的字线保持0V并且使剩余的字线浮动，使得不执行擦除。 因此，可以在单元块单元或页单元中执行擦除。 因此，可以提高数据管理的效率。

公开(公告)号：US20050208686A1

公开(公告)日：2005-09-22

申请号：US10875321

申请日：2004-06-25

Applicant: Yung Ryu ,  Kee Yang ,  Bang Oh ,  Jin Park ,  Young Kim

Inventor： Yung Ryu ,  Kee Yang ,  Bang Oh ,  Jin Park ,  Young Kim

IPC: H01L21/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/007

Abstract: A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

Abstract translation: 提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。 在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。 在有源层上形成p掺杂半导体层。 在p掺杂半导体层上形成p +掺杂的半导体层。 通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。 此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。 本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

公开(公告)号：US20050170229A1

公开(公告)日：2005-08-04

申请号：US11027328

申请日：2004-12-29

Applicant: Hee-Woo Rhee ,  Min-Kyu Song ,  Young-Taek Kim ,  Seung Park ,  Jin Park

Inventor： Hee-Woo Rhee ,  Min-Kyu Song ,  Young-Taek Kim ,  Seung Park ,  Jin Park

IPC: H01M8/02 ,  C08J5/22 ,  H01M4/86 ,  H01M8/10

CPC classification number: C08J5/2275 ,  C08J5/2237 ,  C08J5/2256 ,  C08J2327/18 ,  H01M4/8605 ,  H01M8/1004 ,  H01M8/1048 ,  H01M8/1051 ,  H01M8/1053 ,  H01M8/1067 ,  H01M8/1081 ,  Y02P70/56

Abstract: The present invention relates to a composite ion-exchange membrane that can exhibit good conductivity at high temperatures, methods to produce the polymer membrane, membrane-electrode assemblies that comprise one or more of such polymers, and polymer electrolyte fuel cells that comprise one or more of such electrode assemblies.

Abstract translation: 本发明涉及一种能够在高温下表现出良好的导电性的复合离子交换膜，制备聚合物膜的方法，包含这些聚合物中的一种或多种的膜 - 电极组件以及包含一种或多种 的这种电极组件。

公开(公告)号：US20050075823A1

公开(公告)日：2005-04-07

申请号：US10750666

申请日：2003-12-31

Applicant: Jin Park

Inventor： Jin Park

IPC: F02D45/00 ,  B01D53/94 ,  F01N3/20 ,  G01K7/42 ,  G01K11/00 ,  G01K1/00

CPC classification number: G01K7/42 ,  F02D2200/0804

Abstract: In an initial state, the exhaust gas temperature at a catalytic converter inlet is predicted based on a stored exhaust gas temperature of the previous engine shut-off and a time elapse between the previous engine shut-off and subsequent engine restart. In a steady state, the exhaust gas temperature at the catalytic converter inlet is predicted by summing the base exhaust gas temperature at the catalytic converter inlet and the exhaust pipe temperature at the catalytic converter inlet with a predetermined rate.

Abstract translation: 在初始状态下，基于先前的发动机关闭的存储的废气温度和先前的发动机关闭和随后的发动机重起之间的时间经过，预测催化转化器入口处的废气温度。 在稳定状态下，催化转化器入口处的废气温度通过将催化转化器入口处的基本废气温度与催化转化器入口处的排气管温度以预定的速率相加来预测。

公开(公告)号：US09842852B2

公开(公告)日：2017-12-12

申请号：US14959601

申请日：2015-12-04

Applicant: Jin Park ,  Hyun-Woo Kim ,  Jin-Kyu Han ,  Cha-Won Koh

Inventor： Jin Park ,  Hyun-Woo Kim ,  Jin-Kyu Han ,  Cha-Won Koh

IPC: G03F7/004 ,  H01L27/11582 ,  H01L21/311 ,  G03F7/039 ,  G03F7/075 ,  H01L27/1157 ,  H01L27/11575 ,  H01L21/3213

CPC classification number: H01L27/11582 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0758 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L27/1157 ,  H01L27/11575

Abstract: A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

公开(公告)号：US09003322B2

公开(公告)日：2015-04-07

申请号：US13370549

申请日：2012-02-10

Applicant: Won-Seok Kwon ,  Jin Park

Inventor： Won-Seok Kwon ,  Jin Park

IPC: G06F3/048 ,  G06F3/0485 ,  G06F3/0488

CPC classification number: G06F3/0412 ,  G06F3/0485 ,  G06F3/04883 ,  G06F2203/04104

Abstract: The present invention provides a method for processing multi-touch input in a touch screen terminal in which application programs in form of subordinate sub-windows are displayed by detecting a movement and the number of touch flickings; and switching between sub-windows opened in the corresponding application program or between the application programs depending on the number of touch flickings.

Abstract translation: 本发明提供了一种在触摸屏终端中处理多点触摸输入的方法，其中通过检测移动和触摸闪烁次数来显示下级子窗口形式的应用程序; 并且在相应的应用程序中打开的子窗口之间或者在应用程序之间切换，这取决于触摸闪烁的次数。