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41 条记录 (耗时 0.048 秒)

    Process for avoiding spin-on-glass cracking in high aspect ratio cavities
    21.
    发明授权
    Process for avoiding spin-on-glass cracking in high aspect ratio cavities 失效
    避免在高纵横比腔中旋转玻璃裂纹的方法

    公开(公告)号：US5192715A

    公开(公告)日：1993-03-09

    申请号：US873920

    申请日：1992-04-24

    申请人： John W. Sliwa, Jr. ,  Pankaj Dixit

    发明人： John W. Sliwa, Jr. ,  Pankaj Dixit

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

    CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/522 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/902

    摘要： Before spin-on-glass (SOG) is applied and soft-cured over metal traces (10) having a height/width aspect ratio (of the spaces) of at least 1, the aluminum metal traces are selectively coated with selective tungsten (16). After SOG (18) is spun on and soft-cured, it is etched back to expose the metal interconnects. A selective tungsten wet etch in H.sub.2 O.sub.2 detaches the SOG from the metal walls, leaving silt-like voids (20). Stress-free SOG hard curing may now proceed. A capping layer (22) of SOG may now be applied, soft-cured, then hard-cured. Alternatively, other dielectric materials may be applied as the capping layer. Further, interfacial lateral sidewall voids (24) may be deliberately left unfilled, by employing a capping layer (22') of vapor-deposited oxide. The unfilled voids have a dielectric constant of 1.0, which is useful in extremely high speed devices. The resulting structure is comparatively stress-free as fabricated and is resistant to later environmentally-induced brittle tensile fracture.

    摘要翻译： 在旋涂玻璃（SOG）被施加并软化固化在具有至少1的高度/宽度纵横比（空间）的金属迹线（10）之后，铝金属迹线选择性地涂覆有选择性钨（16 ）。 在将SOG（18）纺丝并软化后，将其回蚀以暴露金属互连。 H 2 O 2中的选择性钨湿蚀刻将SOG从金属壁分离出来，留下淤泥状空隙（20）。 现在可以进行无压力的SOG硬化。 现在可以施加SOG的覆盖层（22），软化，然后硬化。 或者，可以施加其它电介质材料作为覆盖层。 此外，通过采用蒸镀氧化物的覆盖层（22'），界面侧向侧壁空隙（24）可有意留下未填充。 未填充的空隙的介电常数为1.0，这在非常高速的装置中是有用的。 所得到的结构在制造时是相对无应力的，并且耐受以后的环境诱导的脆性拉伸断裂。

    Method of coplanar integration of semiconductor IC devices
    26.
    发明授权
    Method of coplanar integration of semiconductor IC devices 失效
    半导体IC器件的共面集成方法

    公开(公告)号：US5075253A

    公开(公告)日：1991-12-24

    申请号：US581510

    申请日：1990-09-12

    申请人： John W. Sliwa, Jr.

    发明人： John W. Sliwa, Jr.

    IPC分类号： H01L21/98 ,  H01L23/52 ,  H01L23/538 ,  H01L25/065 ,  H01L29/06

    CPC分类号： H01L25/50 ,  H01L23/52 ,  H01L23/5381 ,  H01L25/0655 ,  H01L29/0657 ,  H01L2224/95146 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/3011 ,  Y10T29/4913

    摘要： A high degree of wafer-scale integration of normally incompatible IC devices is achieved by providing a plurality of segments (10), each segment having thereon one or more circuits, circuit elements, sensors and/or I/O connections (14'). Each segment is provided with at least one edge (12) having an abutting portion (12a) capable of abutting against a similar edge of a neighboring segment. The segments are placed on the surface of a flotation liquid (20) and are allowed to be pulled together so as to mate abutting edges of neighboring segments, thereby forming superchips (10'). Microbridges (22) are formed between neighboring segments, such as by solidifying the flotation liquid, and interconnections (26) are formed between neighboring segments. In this manner, coplanar integration of semiconductor ICs is obtained, permitting mixed and normally incompatible circuit functions on one pseudomonolithic device as diverse as silicon and III-V digital circuits, III-V optoelectronic devices, static RAMs, charge coupled devices, III-V lasers, superconducting thin films, ferromagnetic non-volatile memories, high electron mobility transistors, and bubble memories, to name a few, to be integrated in any desired combination. The yieldable scale of integration of a given device technology is also greatly extended. The segments are brought together in a particulate-free fashion with high throughput and exacting reproducibility at low cost.

    摘要翻译： 通常提供多个段（10），每个段具有一个或多个电路，电路元件，传感器和/或I / O连接（14'），可实现通常不兼容的IC器件的高度的晶片级集成。 每个段设置有至少一个边缘（12），该边缘具有抵靠部分（12a），该邻接部分能抵靠邻近段的类似边缘。 这些段被放置在浮选液体（20）的表面上，并被允许被拉在一起，以便配合相邻段的邻接边缘，由此形成超级磁芯（10'）。 在相邻段之间形成微桥（22），例如通过固化浮选液体，并且在相邻段之间形成互连（26）。 以这种方式，获得半导体IC的共面集成，允许在一个假单元器件上混合和通常不兼容的电路功能，如硅和III-V数字电路，III-V光电子器件，静态RAM，电荷耦合器件，III-V 激光器，超导薄膜，铁磁非易失性存储器，高电子迁移率晶体管和气泡存储器等等，以集成在任何期望的组合中。 给定设备技术的可收缩的整合规模也大大延伸。 这些片段以无颗粒的方式以低成本以高产量和严格的再现性结合在一起。

    Integrated circuit micropackaging
    28.
    发明授权
    Integrated circuit micropackaging 失效
    集成电路微封装

    公开(公告)号：US4322737A

    公开(公告)日：1982-03-30

    申请号：US96211

    申请日：1979-11-20

    申请人： John W. Sliwa, Jr.

    发明人： John W. Sliwa, Jr.

    IPC分类号： F28D15/04 ,  H01L23/34 ,  H01L23/427 ,  H01L31/052 ,  H02S40/42 ,  H02S40/44 ,  H01L23/02 ,  H01L25/04 ,  H01L23/48

    CPC分类号： F28D15/046 ,  H01L23/34 ,  H01L23/427 ,  H01L31/052 ,  H01L2924/0002 ,  Y02E10/50 ,  Y10S257/93

    摘要： Thermal dissipation problems characteristic of micropackaging applications in integrated circuits can be eliminated by the use of a semiconductor heat pipe package. Additionally, the heat pipe package as herein disclosed can be employed for the creation of substantially constant temperature surfaces. In applications where a device requires controlled temperatures in order to achieve optimum operation, such as in photo voltaic converters, the packaging of the present invention provides a means for such temperature control. The heat pipe package comprises, in its simplest form, a closed vessel or box containing a heat transferring fluid. In its liquid state, the heat transferring fluid is transported along the interior surfaces of the box by means of a plurality of microgrooves through capillary action. The interior cavity of the heat pipe package or box provides a means for transport of the heat transferring fluid in the vapor state. The integrated circuits may be disposed in the semiconductor surface of the package itself, or mounted as dies in high density. The large number of intercommunications which are required between the high density of integrated circuits included with the micropackaging can be achieved by a combination of optical and electrical communication lines or buses.

    摘要翻译： 通过使用半导体热管封装可以消除集成电路中的微封装应用的特征的散热问题。 此外，如本文所公开的热管包装可用于创建基本恒定的温度表面。 在设备需要受控温度以达到最佳操作的应用中，例如在光伏转换器中，本发明的封装提供了这种温度控制的手段。 热管包装以其最简单的形式包括含有传热流体的密闭容器或箱体。 在其液体状态下，传热流体通过多个微槽通过毛细作用沿着盒的内表面传送。 热管封装或箱体的内腔提供了一种在蒸汽状态下运输传热流体的装置。 集成电路可以设置在封装本身的半导体表面中，或者作为模具高密度地安装。 包含在微封装中的高密度集成电路之间所需的大量互通可以通过光和电通信线路或总线的组合来实现。

    Non-contact damage-free ultrasonic cleaning of implanted or natural structures having moving parts and located in a living body
    29.
    发明授权
    Non-contact damage-free ultrasonic cleaning of implanted or natural structures having moving parts and located in a living body 有权
    具有运动部件并位于生物体内的植入式或天然结构的非接触式无损伤超声波清洗

    公开(公告)号：US08083707B2

    公开(公告)日：2011-12-27

    申请号：US10826232

    申请日：2004-04-16

    申请人： Carol A. Tosaya ,  John W. Sliwa, Jr.

    发明人： Carol A. Tosaya ,  John W. Sliwa, Jr.

    IPC分类号： A61B17/20

    CPC分类号： A61B17/22004 ,  A61B90/37 ,  A61B2017/00243 ,  A61B2017/22098

    摘要： Ultrasonic, sonic or vibratory energy, delivered non-invasively, minimally invasively or invasively (e.g. surgically), is utilized to provide direct cleaning action at or to the location of the implanted device such as a prosthetic heart valve with undesirable deposits of at least some amount thereon or therein. Such ultra-sound energy may be aided by the use of a drug in association or cooperation with the acoustic irradiation. The “cleaning” acoustic energy may optionally be delivered under the guidance of an imaging modality and may be delivered in a timed or gated manner such that the valve occluders or leaflets are in a preferred position (assuming they are functioning) during exposures.

    摘要翻译： 超声波，声波或振动能量非侵入性地以最小的侵入性或侵入性（例如外科手术）被使用，以在植入装置的位置处或位置处提供直接清洁作用，例如假体心脏瓣膜，其具有至少一些不期望的沉积 在其上或其中。 这种超声能量可以通过使用与声辐射相关联或配合的药物来辅助。 “清洁”声能可以任选地在成像模态的指导下传送，并且可以以定时或门控的方式递送，使得在曝光期间，阀封闭器或传单处于优选位置（假设它们正在起作用）。

    Microbubble and microdroplet switching, manipulation and modulation of acoustic, electromagnetic and electrical waves, energies and potentials
    30.
    发明授权
    Microbubble and microdroplet switching, manipulation and modulation of acoustic, electromagnetic and electrical waves, energies and potentials 有权
    微泡和微滴切换，声学，电磁和电波，能量和电位的操纵和调制

    公开(公告)号：US07735945B1

    公开(公告)日：2010-06-15

    申请号：US11035488

    申请日：2005-01-13

    申请人： John W. Sliwa, Jr. ,  Carol A. Tosaya

    发明人： John W. Sliwa, Jr. ,  Carol A. Tosaya

    IPC分类号： B41J29/38 ,  B41J2/015 ,  B41J2/04 ,  B41J2/045 ,  B41J2/02

    CPC分类号： B41J2/04

    摘要： The formation and manipulation of microbubbles, microdroplets and films of (preferably) flowable materials, such as liquids and gases, are used to beneficially control or modulate acoustic-energy propagation, electromagnetic-energy propagation or electrical potential and current application. A droplet, bubble or film causes at least one of reflection, refraction, diffraction, attenuation, sapping, scattering, dissipation, redirection, conversion or blocking of at least one component of the energy due to the droplet, bubble or film causing a propagation discontinuity, disruption or energy-barrier to the energy. The energy comprises at least one of acoustic, electrical, electromagnetic, magnetic, kinetic, mechanical, chemical, RF, thermal, pneumatic, hydraulic or non-visible optical energy.

    摘要翻译： 使用微泡，微滴和（优选）可流动材料（例如液体和气体）的形成和操作来有利地控制或调节声能传播，电磁能传播或电位和电流施加。 液滴，气泡或膜会导致由于液滴，气泡或膜引起传播不连续性而导致的能量的至少一个分量的反射，折射，衍射，衰减，扫描，散射，耗散，重定向，转换或阻挡中的至少一种 ，能量的破坏或能量障碍。 能量包括声学，电学，电磁，磁性，动力学，机械，化学，RF，热，气动，液压或不可见光能中的至少一种。