摘要:
A memory device includes an array of resistance change memory cells divided into a first memory block including a first selected memory cell of a first plurality of memory cells and a second memory block including a second selected memory cell of a second plurality of memory cells, and sensing and writing circuitry configured to simultaneously activate a line connected with the first and second selected memory cells. The first and second selected memory cells may be written by iteratively applying a level-controlled write signal to memory cells not having a programmed state equal to the write data until a verify-read operation indicates respective programmed states for the first and second selected memory cells are equal to the write data.
摘要:
A bi-directional resistive memory device includes a memory cell array including a plurality of memory cells and an input/output (I/O) circuit. The I/O circuit is configured to generate a first voltage having a positive polarity and a second voltage having a negative polarity, provide one of the first voltage and the second voltage to the memory cell array through a bitline responsive to a logic state of input data, and adjust magnitudes of the first and second voltage when data written in the memory cell array has an offset. Related memory systems and methods are also provided.
摘要翻译:双向电阻式存储器件包括包括多个存储单元和输入/输出(I / O)电路的存储单元阵列。 I / O电路被配置为产生具有正极性的第一电压和具有负极性的第二电压,响应于输入的逻辑状态,通过位线将第一电压和第二电压中的一个提供给存储单元阵列 数据,并且当写入存储单元阵列中的数据具有偏移量时,调整第一和第二电压的幅度。 还提供了相关的存储器系统和方法。
摘要:
Provided are a storage medium, which has a security function, for storing media content and an output apparatus for outputting data stored in the storage medium. The storage medium includes a controller for converting at least one of a position of pins of a connector and a storage position of media content in a memory unit in order to control transmission of the media content in the memory unit to the output apparatus.
摘要:
A semiconductor memory device having the mismatch cell makes a capacitance difference between a bit line pair relatively large during a read operation using at least one dummy memory cell as a mismatch cell selected together with a corresponding memory cell. Therefore, data of a semiconductor memory device may be detected more easily.
摘要:
The present invention relates to a liquid crystal display device with a source driver in which a significant signal delay is not generated, and which has a fast response speed. The present invention also provides a liquid crystal display device comprising a scan driver including a D/A converter for outputting analog signals corresponding to gradation data input, a triangular wave generator for outputting triangular wave signals, and a comparator for applying data voltage to each pixel which include OCB liquid crystal cells by comparing the analog signals with the triangular wave signals. The data voltage is a PWM pulse with a varied voltage width.
摘要:
A liquid crystal display apparatus includes a backlight unit, a second polarization layer, a liquid crystal layer disposed between the backlight unit and the second polarization layer, a first polarization layer disposed between the backlight unit and the liquid crystal layer. In an embodiment, a surface of the first polarization layer facing the backlight unit includes a reflective surface and a surface of the first polarization layer facing the backlight unit includes an absorbent surface. In another embodiment, the first polarization layer includes grids, which include a metal, and absorbing members, which include dielectric materials. In another embodiment, the first polarization layer includes grids, each of which includes a first component including a dielectric material and a second component including a metal.
摘要:
A print head includes a light source, a driver chip electrically connected to the light source and a lens array on the side of light irradiation of the light source. The light source includes a substrate and a plurality of organic light emitting diodes arranged in adjacent groups on the substrate. Each of the organic light emitting diodes of a group includes a first electrode, an organic emissive layer, and a second electrode. First wires on the substrate connect each first electrode to a first electrode in an adjacent group. A separator is located between the adjacent groups. A first pad on the substrate is electrically connected to each first electrode of each of the organic light emitting diodes of a first group and a plurality of second pads are located on the substrate, each second pad electrically connected to the second electrode of each group.
摘要:
A semiconductor memory device may include a memory cell array, a bit line sense amplifier, a sub word line driver, and an electrode. The memory cell array may include a sub memory cell array connected between sub word lines and bit line pairs and having memory cells which are selected in response to a signal transmitted to the sub word lines and column selecting signal lines. The bit line sense amplifier may be configures to sense and amplify data of the bit line pairs. The sub word line driver may be configured to combine signals transmitted from word selecting signal lines and signals transmitted from main word lines to select the sub word lines. Moreover, the memory cell array may be configured to transmit data between the bit line pairs and local data line pairs and to transmit data between the local data line pairs and global data line pairs. The electrode may be configured to cover the whole memory cell array and to apply a voltage needed for the memory cells. The local data line pairs may be arranged on a first layer above the electrode in the same direction as the sub word line. The column selecting signal lines and the global data line pairs may be arranged on a second layer above the electrode in the same direction as the bit line. The word selecting signal lines and the main word lines may be arranged on a third layer above the electrode in the same direction as the sub word line. Related methods of signal line arrangement are also discussed.
摘要:
An address coding method, which is performed by a memory device including a plurality of banks each being shared by at least two memory blocks, includes: activating adjacent banks shared by at least two memory blocks during a refresh operation of the memory device, and enabling the refresh operation in each bank alternately between the at least two memory blocks. The method includes activating adjacent banks shared by the at least two memory blocks during another operation of the memory device, and enabling the another operation in each bank alternately between the at least two memory blocks.
摘要:
A liquid crystal display (LCD) device and a method of operating the same prevents a tearing effect from occurring. The LCD device includes a frame memory for writing new red, green and blue data or reading previously written red, green and blue data according to address designation, and a detector which outputs a cut off signal for cutting off operation of a light source controller or a gradation voltage generating portion when the new red, green and blue data are written to the frame memory before the written red, green and blue data are read from the frame memory.