Balun system and method
    21.
    发明授权
    Balun system and method 有权
    巴伦系统和方法

    公开(公告)号:US08502620B2

    公开(公告)日:2013-08-06

    申请号:US12944847

    申请日:2010-11-12

    Abstract: A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.

    Abstract translation: 公开了一种用于发送信号的系统和方法。 一个实施例包括一个平衡 - 不平衡变换器,例如Marchand平衡 - 不平衡转换器,其具有带初级线圈的第一变压器和第一次级线圈,以及具有初级线圈的第二变压器和第二次级线圈。 第一次级线圈和第二次级线圈连接到接地平面,并且接地平面具有位于第一变压器和第二变压器中的线圈分离下方的槽线。 缝线也可以具有手指。

    Balun System and Method
    22.
    发明申请
    Balun System and Method 有权
    巴伦系统和方法

    公开(公告)号:US20120119845A1

    公开(公告)日:2012-05-17

    申请号:US12944847

    申请日:2010-11-12

    Abstract: A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.

    Abstract translation: 公开了一种用于发送信号的系统和方法。 一个实施例包括一个平衡 - 不平衡变换器,例如Marchand平衡 - 不平衡转换器,其具有带初级线圈的第一变压器和第一次级线圈,以及具有初级线圈的第二变压器和第二次级线圈。 第一次级线圈和第二次级线圈连接到接地平面,并且接地平面具有位于第一变压器和第二变压器中的线圈分离下方的槽线。 缝线也可以具有手指。

    TRANSMITTING RADIO FREQUENCY SIGNAL IN SEMICONDUCTOR STRUCTURE
    23.
    发明申请
    TRANSMITTING RADIO FREQUENCY SIGNAL IN SEMICONDUCTOR STRUCTURE 有权
    在半导体结构中发射无线电频率信号

    公开(公告)号:US20090195327A1

    公开(公告)日:2009-08-06

    申请号:US12023184

    申请日:2008-01-31

    Abstract: A semiconductor device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. On one side of the signal line is a first dielectric, and on the opposite side of the signal line is a second dielectric. First and second ground lines are proximate to the first and second dielectrics, respectively, and the ground lines are approximately parallel to the signal line. The device has a transverse cross-section that varies along the principal axis.

    Abstract translation: 沿着信号线发送射频信号的半导体装置包括沿主轴延伸的信号线。 在信号线的一侧是第一电介质,信号线的相对侧是第二电介质。 第一和第二接地线分别靠近第一和第二电介质,并且接地线近似平行于信号线。 该装置具有沿主轴变化的横截面。

    Switched Capacitor Array for Voltage Controlled Oscillator
    25.
    发明申请
    Switched Capacitor Array for Voltage Controlled Oscillator 审中-公开
    用于压控振荡器的开关电容阵列

    公开(公告)号:US20120286888A1

    公开(公告)日:2012-11-15

    申请号:US13103592

    申请日:2011-05-09

    Abstract: A system comprises a voltage controlled oscillator comprising an inductor and a variable capacitor and a switched capacitor array connected in parallel with the variable capacitor. The switched capacitor array further comprises a plurality of capacitor banks wherein a thermometer code is employed to control each capacitor bank. In addition, the switched capacitor array provides N tuning steps for the oscillation frequency of the voltage controlled oscillator when the switched capacitor array is controlled by an n-bit thermometer code.

    Abstract translation: 一种系统包括压控振荡器,其包括电感器和可变电容器以及与可变电容器并联连接的开关电容器阵列。 开关电容器阵列还包括多个电容器组,其中使用温度计代码来控制每个电容器组。 此外,当开关电容器阵列由n位温度计代码控制时,开关电容器阵列为压控振荡器的振荡频率提供N个调谐步骤。

    Method for Substrate Noise Analysis
    26.
    发明申请
    Method for Substrate Noise Analysis 有权
    基板噪声分析方法

    公开(公告)号:US20110265051A1

    公开(公告)日:2011-10-27

    申请号:US12766732

    申请日:2010-04-23

    CPC classification number: G06F17/5036 G06F2217/82

    Abstract: In accordance with an embodiment, a method for substrate noise analysis comprises using a first processor based system, creating and simulating a circuit schematic comprising a multi-terminal model of a transistor, and thereafter, creating a layout based on properties represented in the circuit schematic and simulation results of the simulating. The multi-terminal model comprises a source terminal, a gate terminal, a drain terminal, a body terminal, and a guard-ring terminal.

    Abstract translation: 根据实施例,用于衬底噪声分析的方法包括使用基于第一处理器的系统,创建和模拟包括晶体管的多端子模型的电路原理图,然后基于电路原理图中所示的特性创建布局 和仿真结果的模拟。 多端子模型包括源极端子,栅极端子,漏极端子,主体端子和保护环端子。

    DE-Embedding Method For On-Wafer Devices
    27.
    发明申请
    DE-Embedding Method For On-Wafer Devices 有权
    晶圆设备的嵌入方法

    公开(公告)号:US20090224791A1

    公开(公告)日:2009-09-10

    申请号:US12042606

    申请日:2008-03-05

    CPC classification number: G01R31/2884 H01L22/34

    Abstract: A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrinsic characteristics of the test structure to produce a set of parameters representative of the intrinsic characteristics of a device-under-test (“DUT”).

    Abstract translation: 公开了一种用于去嵌入晶片装置的方法和系统。 该方法包括使用一组ABCD矩阵分量表示测试结构的固有特性; 确定测试结构产生的内在特性; 并且使用确定的测试结构的固有特性来产生表示待测器件(“DUT”)的固有特性的一组参数。

    Power cell and power cell circuit for a power amplifier

    公开(公告)号:US09780211B2

    公开(公告)日:2017-10-03

    申请号:US13731873

    申请日:2012-12-31

    CPC classification number: H01L29/785 H01L29/66901

    Abstract: A power cell includes a fin over a substrate, the fin extending in a direction substantially perpendicular to a bottom surface of the substrate. The fin includes a first dopant type. The power cell further includes at least one isolation region over the substrate between the fin and an adjacent fin. The power cell further includes a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a doped region in the fin, wherein the doped region has a second dopant type different from the first dopant type and the doped region defines a channel region in the fin.

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