Abstract:
A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.
Abstract:
A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.
Abstract:
A semiconductor device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. On one side of the signal line is a first dielectric, and on the opposite side of the signal line is a second dielectric. First and second ground lines are proximate to the first and second dielectrics, respectively, and the ground lines are approximately parallel to the signal line. The device has a transverse cross-section that varies along the principal axis.
Abstract:
A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.
Abstract:
A system comprises a voltage controlled oscillator comprising an inductor and a variable capacitor and a switched capacitor array connected in parallel with the variable capacitor. The switched capacitor array further comprises a plurality of capacitor banks wherein a thermometer code is employed to control each capacitor bank. In addition, the switched capacitor array provides N tuning steps for the oscillation frequency of the voltage controlled oscillator when the switched capacitor array is controlled by an n-bit thermometer code.
Abstract:
In accordance with an embodiment, a method for substrate noise analysis comprises using a first processor based system, creating and simulating a circuit schematic comprising a multi-terminal model of a transistor, and thereafter, creating a layout based on properties represented in the circuit schematic and simulation results of the simulating. The multi-terminal model comprises a source terminal, a gate terminal, a drain terminal, a body terminal, and a guard-ring terminal.
Abstract:
A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrinsic characteristics of the test structure to produce a set of parameters representative of the intrinsic characteristics of a device-under-test (“DUT”).
Abstract:
Shield structures are provided. A first and second shield lines are formed over a substrate and coupled with a first voltage. A conductive line is formed between the first and the second shield lines, and coupled with a second voltage. The first shield layer is formed over the substrate and coupled to the first and the second shield lines via at least one first conductive structure.
Abstract:
A power cell includes a fin over a substrate, the fin extending in a direction substantially perpendicular to a bottom surface of the substrate. The fin includes a first dopant type. The power cell further includes at least one isolation region over the substrate between the fin and an adjacent fin. The power cell further includes a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a doped region in the fin, wherein the doped region has a second dopant type different from the first dopant type and the doped region defines a channel region in the fin.
Abstract:
An integrated circuit includes a first chip and a second chip coupled to the first chip in a vertical stack. The first chip includes a radio frequency circuit and a first coil electrically coupled to the radio frequency circuit. The second chip includes a calibration circuit and a second coil electrically coupled to the calibration circuit. The calibration circuit is configured to calibrate the radio frequency circuit disposed on the first chip through inductive coupling between the first and second coils.