公开(公告)号：US20100177483A1

公开(公告)日：2010-07-15

申请号：US12601839

申请日：2008-05-29

申请人： Akio Yoshimoto ,  Mitsuhiro Tanaka

发明人： Akio Yoshimoto ,  Mitsuhiro Tanaka

IPC分类号： H05K7/20 ,  H05K5/02

CPC分类号： H05K5/0034 ,  H05K3/284 ,  H05K5/006 ,  H05K5/061 ,  H05K5/065 ,  H05K7/1417 ,  H05K7/142 ,  H05K7/20418 ,  H05K2201/2018 ,  H05K2203/1316 ,  H05K2203/1581

摘要： A substrate includes a pair of surfaces opposing to each other in a direction. First electronic components are provided on one surface. Second electronic components lower than a maximum value of the height of the first electronic components in a direction are provided on the other surface. Insulating resin includes a covering part adhering and covering the second electronic components and the other surface, and side surface part extending from the periphery of the substrate to a side of the second electronic components along the direction. A lid covers the first electronic components from an opposite side of the substrate, and is fixed to the side surface part from the opposite side of the substrate.

摘要翻译： 衬底包括在一个方向上彼此相对的一对表面。 在一个表面上提供第一电子部件。 在另一个表面上设置有低于第一电子部件在一个方向上的高度的最大值的第二电子部件。 绝缘树脂包括粘附并覆盖第二电子部件和另一个表面的覆盖部分，以及沿着该方向从基板周边延伸到第二电子部件侧的侧表面部分。 盖子从基板的相对侧覆盖第一电子元件，并且从基板的相对侧固定到侧表面部分。

公开(公告)号：US20080308909A1

公开(公告)日：2008-12-18

申请号：US12193811

申请日：2008-08-19

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： H01L29/20 ,  B32B7/00 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

摘要翻译： 提供了抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

公开(公告)号：US07135347B2

公开(公告)日：2006-11-14

申请号：US10873767

申请日：2004-06-22

申请人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

发明人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

IPC分类号： H01L21/00

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

摘要翻译： 制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气 ，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤 源气体的气相反应。 在反应进行之前，至少一种载气含有氮，同时晶片温度升高。 至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

公开(公告)号：US06989202B2

公开(公告)日：2006-01-24

申请号：US10891340

申请日：2004-07-14

申请人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B9/00

CPC分类号： C30B25/18 ,  C23C16/0218 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

公开(公告)号：US06835965B2

公开(公告)日：2004-12-28

申请号：US10351390

申请日：2003-01-27

申请人： Mitsuhiro Tanaka ,  Tomohiko Shibata ,  Osamu Oda ,  Takashi Egawa

发明人： Mitsuhiro Tanaka ,  Tomohiko Shibata ,  Osamu Oda ,  Takashi Egawa

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/173

摘要： An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 1011/cm2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/cm2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/m2 or less, as well.

摘要翻译： 本发明的目的在于提供减少位错密度，发光效率高的半导体发光元件。 半导体发光器件20具有由含有Al的氮化物半导体和位移密度为10 11 / cm 2以下的底层13。 该器件还具有n型导电层14和p型导电层17，它们各自由氮化物半导体构成，Al氮化物半导体的Al含量低于构成底层的氮化物半导体，其位错密度为1×10 10 / 2>以下。 该装置还具有由氮化物半导体构成的发光层15，该氮化物半导体的Al含量比构成底层的氮化物半导体的Al含量小，并且具有1×10 10 / m 2以下的位错密度。

公开(公告)号：US06713954B2

公开(公告)日：2004-03-30

申请号：US10097275

申请日：2002-03-15

申请人： Akihiro Wakahara ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Akihiro Wakahara ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01J162

CPC分类号： H01J63/06 ,  B82Y10/00 ,  H01J2201/30469 ,  H01L33/325 ,  H01L33/502

摘要： A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.

摘要翻译： 发光元件包括透明基板，包括形成在所述透明基板上的稀土金属元素的III-V族氮化物半导体层和设置在距离所述III型半导体层的表面5mm以内的电子束照射源， V族氮化物半导体层，以与所述III-V族氮化物半导体层相对。 然后，通过来自照射源的电子束激发III-V族氮化物半导体层中的稀土金属元素，并且发射稀土金属元素固有的给定荧光。

公开(公告)号：US06709703B2

公开(公告)日：2004-03-23

申请号：US10010945

申请日：2001-12-06

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： C23C1634

CPC分类号： C23C16/301 ,  C23C16/4401 ,  C23C16/4411 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, which inhibits the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.

摘要翻译： 将基板设置在安装在反应器中并且水平布置的基座上。 在反应器内壁的与衬底相对的部分设置有冷却套。 通过使给定的冷却介质通过连接到护套的泵流过冷却套，至少内壁的相对部分被冷却，这抑制了引入到反应器中的原料气体之间的反应。 结果，在制造III-V族氮化物膜时，显影膜生长速度并且开发出晶体质量。

公开(公告)号：US06623877B2

公开(公告)日：2003-09-23

申请号：US09962932

申请日：2001-09-25

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B900

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/12681 ,  Y10T428/31848

摘要： An epitaxial wafer includes a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or more, formed on the underfilm. In fabricating III nitride films on the epitaxial wafer, the oxidized surface layer of the GaN film is removed through an etching process, and subsequently, another III nitride film is formed thereon.

摘要翻译： 外延晶片包括由蓝宝石-SiC单晶等制成的基材，在基材上至少包含外延生长的Al的III族氮化物底膜和优选形成有厚度为50以上的GaN膜 底膜 在外延晶片上制造III族氮化物膜时，通过蚀刻工艺去除GaN膜的氧化表面层，随后在其上形成另外的III族氮化物膜。

公开(公告)号：US06275123B1

公开(公告)日：2001-08-14

申请号：US09351944

申请日：1999-07-12

申请人： Mitsuhiro Tanaka ,  Tomohiko Shibata ,  Yuji Hori

发明人： Mitsuhiro Tanaka ,  Tomohiko Shibata ,  Yuji Hori

IPC分类号： H03H964

CPC分类号： H03H9/6416

摘要： A surface acoustic wave matched filter for use in a spread spectrum communication system is disclosed. The surface acoustic wave matched filter includes a substrate having dispersity and is composed of a sapphire main body and a piezoelectric aluminum nitride. A tap distance L of an output side electrode is designed on the basis of a group velocity vg instead of a phase velocity vs in order to match the tap distance L with an input spread spectrum signal and to improve a correlation peak level of an output demodulated signal. When the tap distance L is set to satisfy a condition of vg/f1×0.97≦L≦vg/f1×1.02, a decrease in the correlation peak level of the matched filter can be improved from 7 dB to a value smaller than 3 dB, and S/N of the output demodulated signal can be increased. Thus, the disclosed device renders it no longer necessary to process the output demodulated signal by a complicated and power consuming circuit.

摘要翻译： 公开了一种用于扩频通信系统中的表面声波匹配滤波器。 声表面波匹配滤波器包括具有分散性并由蓝宝石主体和压电氮化铝构成的基板。 基于组速度vg而不是相位速度vs来设计输出侧电极的抽头距离L，以使抽头距离L与输入扩频信号相匹配，并且提高输出解调的相关峰值电平 信号。 当抽头距离L被设置为满足vg / f1x0.97 <= L <= vg / f1x1.02的条件时，匹配滤波器的相关峰值电平的降低可以从7dB提高到小于 3dB，可以提高输出解调信号的S / N。 因此，所公开的设备使其不再需要由复杂且耗电的电路来处理输出解调信号。

公开(公告)号：US06194809B1

公开(公告)日：2001-02-27

申请号：US09401406

申请日：1999-09-22

申请人： Masao Takeuchi ,  Mitsuhiro Tanaka

发明人： Masao Takeuchi ,  Mitsuhiro Tanaka

IPC分类号： H03H925

CPC分类号： H03H9/0259

摘要： A surface acoustic wave device including a substrate and an electrode structure formed on the substrate, said substrate being made of a doubly rotated Y-cut (&agr;X-&thgr;Y cut) Langasite (La3Ga5SiO14), a rotation angle &agr; from the X axis being substantially 50°±5° and a rotation angle &thgr; from the Y axis being substantially 19°-30°. The device further includes a normal type electrode structure which reveals a natural single-phase unidirectional transducer property together with an anisotropy of the substrate. The device further has a double electrode type electrode structure which cancels the directionality, or a floating type electrode structure which reverses the directionality. The electrode structure is formed to constitute a surface acoustic wave filter having a low insertion loss and an excellent phase property.

摘要翻译： 一种表面声波装置，包括基板和形成在基板上的电极结构，所述基板由双重旋转的Y切割（αX-θY切割）Langasite（La3Ga5SiO14）制成，从X轴旋转的角度α大致为50 °±5°，Y轴的旋转角θ大致为19°-30°。 该装置还包括正常型电极结构，其显示天然单相单向换能器性质以及基板的各向异性。 该装置还具有消除方向性的双电极型电极结构，或者使方向性反转的浮动型电极结构。 电极结构被形成为具有低插入损耗和优异相位特性的表面声波滤波器。