公开(公告)号：US07144101B2

公开(公告)日：2006-12-05

申请号：US10532020

申请日：2004-01-30

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

公开(公告)号：US20060256167A1

公开(公告)日：2006-11-16

申请号：US11491027

申请日：2006-07-24

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

摘要翻译： 一种包括上电极，压电和/或电致伸缩材料和下电极的压电元件，其特征在于压电和/或电致伸缩材料是由通式ABO 3构成的复合氧化物， 压电和/或电致伸缩材料具有双晶。

公开(公告)号：US20060046319A1

公开(公告)日：2006-03-02

申请号：US11211518

申请日：2005-08-26

申请人： Kenichi Takeda

发明人： Kenichi Takeda

IPC分类号： H01L21/00

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  H01L41/316 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49401

摘要： A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which the ferroelectric member film is sandwiched, the method comprising the steps of: forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate; performing oriented growth of the lower electrode layer on the buffer layer; performing oriented growth of ferroelectric member film to cover the buffer layer and the lower electrode layer; and removing a portion of the ferroelectric member film other than the portion having the oriented growth achieved along the pattern of the buffer layer, by means of an etching treatment.

摘要翻译： 一种制造具有铁电元件膜的铁电元件元件结构的方法，以及夹在铁电元件膜之间的下电极和上电极，所述方法包括以下步骤：在单晶基板上形成具有图案形取向生长的缓冲层 ; 在缓冲层上进行下电极层的取向生长; 执行铁电部件膜的取向生长以覆盖缓冲层和下电极层; 并且通过蚀刻处理除去沿着缓冲层的图案实现的具有取向生长的部分之外的铁电部件膜的一部分。

公开(公告)号：US20050213020A1

公开(公告)日：2005-09-29

申请号：US11085091

申请日：2005-03-22

申请人： Kenichi Takeda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto

发明人： Kenichi Takeda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto

IPC分类号： B41J2/16 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  H01L21/02 ,  H01L41/047 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  C09K19/02

CPC分类号： H01L41/0478 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316

摘要： A dielectric member including, on a substrate, a lower electrode, an oriented dielectric layer, and an upper electrode, in which at least either of the electrodes has an at least two-layered structure constituted of perovskite type oxide conductive layers, and has an orientation.

摘要翻译： 一种电介质构件，在基板上包括下电极，取向介质层和上电极，其中至少任一个电极具有由钙钛矿型氧化物导电层构成的至少两层结构，并且具有 方向。

公开(公告)号：US06864169B2

公开(公告)日：2005-03-08

申请号：US10233475

申请日：2002-09-04

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/70 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

摘要翻译： 在形成通过CMP将氧化硅膜39的互连槽40中的Cu互连46a至46e形成之后，然后进行清洗，每个氧化硅膜39和Cu互连46a至46e的表面被还原 等离子体（氨等离子体）。 然后，没有真空断裂，连续形成盖膜（氮化硅膜）。 该方法使得可以提高通过镶嵌方法形成的铜互连的绝缘击穿电阻（可靠性）。

公开(公告)号：US06596638B1

公开(公告)日：2003-07-22

申请号：US09618999

申请日：2000-07-18

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。 在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US5194901A

公开(公告)日：1993-03-16

申请号：US718287

申请日：1991-06-20

申请人： Satoru Fukushima ,  Kenichi Takeda

发明人： Satoru Fukushima ,  Kenichi Takeda

IPC分类号： G03G15/01 ,  G03G15/06 ,  G03G15/16 ,  G03G21/06

CPC分类号： G03G15/0131 ,  G03G2215/0177

摘要： An image forming apparatus includes a movable photosensitive member; a toner image forming device for forming a toner image on the photosensitive member; a transfer device for electrostatically transferring the toner image from the photosensitive member to a transfer material at a transfer position; and a transfer material carrying member for carrying the transfer material to feed the transfer material to the transfer position. The transfer device transfers the image while the transfer material is on the transfer material carrying member, and after the image is transferred, the transfer material having the toner image transferred thereon and carried on the transfer material carrying member is contacted to the photosensitive member. There is also provided a charger for charging the photosensitive member, wherein at least a part of the photosensitive member making the contact is charged by the charger in a period between its passage through the transfer position and the contact, so as to be given an electric potential at which the toner image forming device does not deposit the toner to the photosensitive member.

摘要翻译： 图像形成装置包括可动光敏元件; 用于在感光构件上形成调色剂图像的调色剂图像形成装置; 用于将调色剂图像从感光构件静电转印到转印位置处的转印材料的转印装置; 以及用于承载转印材料以将转印材料供给到转印位置的转印材料承载构件。 转印装置在转印材料在转印材料承载部件上传送图像，并且在图像转印之后，具有转印在其上并承载在转印材料承载部件上的调色剂图像的转印材料与感光部件接触。 还提供了一种用于对感光构件充电的充电器，其中使感光构件的至少一部分在通过转印位置和接触之间的期间由充电器充电，从而被赋予电 调色剂图像形成装置不将调色剂沉积到感光构件的电位。

公开(公告)号：US08884493B2

公开(公告)日：2014-11-11

申请号：US13176649

申请日：2011-07-05

申请人： Tatsuo Furuta ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Makoto Kubota ,  Hiroshi Saito

发明人： Tatsuo Furuta ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Makoto Kubota ,  Hiroshi Saito

IPC分类号： H01L41/09 ,  H01L41/187 ,  H02N2/00 ,  G02B27/00 ,  B08B7/02 ,  B06B1/02 ,  H01L41/43

CPC分类号： H02N2/008 ,  B06B1/0284 ,  B08B7/02 ,  G02B27/0006 ,  G03B2205/0061 ,  H01L41/187 ,  H01L41/43 ,  H02N2/0015

摘要： Provided is a vibration generating device in which more improvement of drive efficiency can be realized than conventional ones. The vibration generating device includes: a piezoelectric element including a piezoelectric material interposed between electrodes; a vibration member; a power source for applying an alternating voltage to the piezoelectric element; and a control section for controlling a frequency of the alternating voltage applied by the power source, in which the control section controls the frequency of the alternating voltage applied to the piezoelectric element so that the resonance frequency of the piezoelectric element is successively changed from low frequency side to high frequency side in a frequency range including a change range of a resonance frequency of the piezoelectric element.

摘要翻译： 提供了一种振动产生装置，其中可以实现比常规驱动效率更高的驱动效率的提高。 振动产生装置包括：压电元件，其包括介于电极之间的压电材料; 振动件; 用于向压电元件施加交流电压的电源; 以及控制部分，用于控制由电源施加的交流电压的频率，其中控制部分控制施加到压电元件的交流电压的频率，使得压电元件的谐振频率从低频 在包括压电元件的谐振频率的变化范围的频率范围内的高频侧。

公开(公告)号：US20140117811A1

公开(公告)日：2014-05-01

申请号：US14130671

申请日：2012-06-26

申请人： Jumpei Hayashi ,  Kenichi Takeda ,  Shinya Koyama ,  Kenichi Akashi ,  Tatsuo Furuta

发明人： Jumpei Hayashi ,  Kenichi Takeda ,  Shinya Koyama ,  Kenichi Akashi ,  Tatsuo Furuta

IPC分类号： H01L41/083 ,  B41J2/14

CPC分类号： H01L41/083 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/4682 ,  C04B35/49 ,  C04B35/6261 ,  C04B35/62685 ,  C04B35/63416 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3262 ,  C04B2235/40 ,  C04B2235/449 ,  C04B2235/652 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/78 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/80 ,  C04B2235/85 ,  H01L41/09 ,  H01L41/0973 ,  H01L41/1871 ,  H02N2/106 ,  H02N2/163

摘要： A lead-free piezoelectric element that stably operates in a wide operating temperature range contains a lead-free piezoelectric material. The piezoelectric element includes a first electrode, a second electrode, and a piezoelectric material that includes a perovskite-type metal oxide represented by (Ba1-xCax)a(Ti1-yZry)O3 (1.00≦a≦1.01, 0.02≦x≦0.30, 0.020≦y≦0.095, and y≦x) as a main component and manganese incorporated in the perovskite-type metal oxide. The manganese content relative to 100 parts by weight of the perovskite-type metal oxide is 0.02 parts by weight or more and 0.40 parts by weight or less on a metal basis.

摘要翻译： 在宽工作温度范围内稳定工作的无铅压电元件包含无铅压电材料。 压电元件包括​​第一电极，第二电极和压电材料，其包括由（Ba1-xCax）a（Ti1-yZry）O3（1.00＆nlE; a＆nlE; 1.01,0.02＆nlE; x＆nlE）表示的钙钛矿型金属氧化物 ; 0.30，0.020＆nlE; y＆nlE; 0.095和y＆nlE; x）作为主要成分，掺入钙钛矿型金属氧化物中的锰。 相对于100重量份的钙钛矿型金属氧化物的锰含量为0.02重量份以上且0.40重量份以下。

公开(公告)号：USRE43660E1

公开(公告)日：2012-09-18

申请号：US12805390

申请日：2010-07-28

申请人： Noriyuki Sakuma ,  Naoki Yamamoto ,  Kenichi Takeda ,  Hiroshi Fukuda

发明人： Noriyuki Sakuma ,  Naoki Yamamoto ,  Kenichi Takeda ,  Hiroshi Fukuda

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/699 ,  G01P5/10

摘要： The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an α-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.

摘要翻译： 本发明提供一种能够通过在绝缘膜上在半导体衬底上形成具有较高TCR的金属膜来实现高灵敏度的流量传感器的技术。 作为热流体流量传感器的测量装置包括热元件，电阻温度检测器（上游侧电阻温度检测器和下游侧电阻温度检测器）以及空气的电阻温度检测器，全部由第一金属膜 。 第一金属膜由电阻率低于Ta锭的电阻率的三倍且通过溅射沉积在含有金属的非晶膜上获得的α-Ta膜形成。