摘要:
A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.
摘要:
A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 μm to 10 μm. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).
摘要:
To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramics powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.
摘要:
A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Nax1Ky1Liz1) NbO3 (0
摘要:
A semiconductor device includes: a memory cell array that includes non-volatile memory cells; a first memory region and a second memory region that are located in the memory cell array, the first memory region being protected during a protecting period, the second memory region being not protected; an address change circuit that changes an address in an address space of the first memory region and the second memory region in the memory cell array, to an address in an address space of the second memory region, during the protecting period; and a control circuit that prohibits access to the first memory region, and allows access to the second region, during the protecting period.
摘要:
A thin-film piezoelectric element has a substrate, a lower electrode, a piezoelectric portion, and an upper electrode that are sequentially formed on the substrate. The piezoelectric portion has a dielectric thin film that has an alkali niobium oxide-based perovskite structure expressed by general formula (NaxKyLiz)NbO3 (0
摘要翻译:薄膜压电元件具有依次形成在基板上的基板,下电极,压电部和上电极。 压电部分具有电介质薄膜,该电介质薄膜具有由通式(Na x Y x Y z y L z)表示的碱铌氧化物基钙钛矿结构, )NbO 3(0
摘要:
A thin-film piezoelectric element has a substrate, a lower electrode, a piezoelectric portion, and an upper electrode that are sequentially formed on the substrate. The piezoelectric portion has a dielectric thin film that has an alkali niobium oxide-based perovskite structure expressed by general formula (NaxKyLiz)NbO3 (0
摘要翻译:薄膜压电元件具有依次形成在基板上的基板,下电极,压电部和上电极。 压电部分具有电介质薄膜,该电介质薄膜具有由通式(Na x Y x Y z y L z)表示的碱铌氧化物基钙钛矿结构, )NbO 3(0
摘要:
It is an object of the present invention to provide an improved technique for preventing leakage of lubricant from an accommodating space that houses a driving mechanism, while regulating the internal pressure of the accommodating space in a power tool. A representative power tool includes a power tool body, a tool bit, a driving mechanism, a lubricant, an accommodating space, a passage and a lubricant leakage preventing region. The accommodating space is disposed in the body to house the driving mechanism and is hermetically sealed. The passage has an accommodating space side opening and an outside opening. The passage extends, starting from the accommodating space side opening, in a direction away from the outside opening. Then, the passage turns around and extends toward the outside opening. Further, the lubricant leakage preventing region is provided with the passage to prevent the lubricant from leaking from the inside to the outside of the accommodating space. According to the invention, the length of the passage can be made longer and the lubricant must travel a longer distance before leaking out. Therefore, a higher effect of preventing leakage can be obtained.
摘要:
A semiconductor device includes a CAM cell array that stores the operation setting information as to the semiconductor device, a controller that controls read and write of the CAM cell array, a row decoder, and a column decoder. With this structure, different row addresses are allocated to respective functions of the operation setting information. Accordingly, stress is not caused in the CAM cell array of the unselected functions at the time of programming.
摘要:
An electronic control apparatus is designed to perform an engine control program in an object-oriented programming manner. A first type message, which does not contain a count value generated as a result of execution of a method of an object, is stored in a message storage unit. At the time that execution of the method is completed, the stored first type message is read out and a method of the object corresponding to the destination of the message is executed. A timer message, which contains a count value generated as a result of execution of the method of the object, is stored in another storage unit. The count value (timer counter) of the timer message in the other storage unit is reduced one by one as a result of the process being performed every predetermined time. When the count value of the timer message reaches 0 in the message storage unit the message is re-stored as a first type message.