公开(公告)号：USD512946S1

公开(公告)日：2005-12-20

申请号：US29213817

申请日：2004-09-24

申请人： Genichi Hatakoshi ,  Masato Kozutsumi

设计人： Genichi Hatakoshi ,  Masato Kozutsumi

公开(公告)号：US06400742B1

公开(公告)日：2002-06-04

申请号：US09498372

申请日：2000-02-04

申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

公开(公告)号：US6057565A

公开(公告)日：2000-05-02

申请号：US937166

申请日：1997-09-25

申请人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

发明人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/325

摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.

摘要翻译： 在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。 此外，当形成内部阻流结构时，可以减小泄漏电流。 实际上，化学计量组成比偏移的化合物半导体层用作接触层。 此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。 因此，可以在降低接触电阻的同时实现高浓度导电型层。 另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。 此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电 载体浓度。

公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

申请人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

发明人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

公开(公告)号：US20070253051A1

公开(公告)日：2007-11-01

申请号：US10572493

申请日：2004-09-17

申请人： Kunihiko Ishihara ,  Genichi Hatakoshi ,  Keishi Ohashi ,  Katsutaro Ichihara ,  Urara Ichihara

发明人： Kunihiko Ishihara ,  Genichi Hatakoshi ,  Keishi Ohashi ,  Katsutaro Ichihara ,  Urara Ichihara

IPC分类号： G02B26/08

CPC分类号： G03B21/56 ,  Y10T428/12694

摘要： A conductive thin film has first and second surfaces and at least one opening extending through from the first surface to the second surface. At least on one of the first and second surfaces, first and second periodic surface patterns having different period lengths are provided. The period length of the second periodic surface pattern is substantially equal to an odd integral multiple of a half of the period length of the first periodic surface pattern. With this, surface plasmon polaritons excited by the first periodic surface pattern undergo odd-order Bragg reflection by the second periodic surface pattern. As a result, the intensity of the light falling on the first surface and transmitted to the second surface through the opening is increased with high efficiency.

摘要翻译： 导电薄膜具有第一和第二表面以及从第一表面延伸到第二表面的至少一个开口。 至少在第一和第二表面中的一个上，提供具有不同周期长度的第一和第二周期性表面图案。 第二周期性表面图案的周期长度基本上等于第一周期性表面图案的周期长度的一半的奇数整数倍。 由此，由第一周期性表面图案激发的表面等离子体激元由第二周期性表面图案经历奇数阶布拉格反射。 结果，以高效率提高落在第一表面上并通过开口传递到第二表面的光的强度。

公开(公告)号：US20070228390A1

公开(公告)日：2007-10-04

申请号：US11668218

申请日：2007-01-29

申请人： Yasushi HATTORI ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

发明人： Yasushi HATTORI ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/01021 ,  H01L2924/01066 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/00012

摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

摘要翻译： 提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层 形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层 。 荧光体层的表面具有反射荧光体颗粒的形状的突起。

公开(公告)号：US20060250022A1

公开(公告)日：2006-11-09

申请号：US11382209

申请日：2006-05-08

申请人： Tetsuya Hasegawa ,  Tooru Koyama ,  Genichi Hatakoshi

发明人： Tetsuya Hasegawa ,  Tooru Koyama ,  Genichi Hatakoshi

IPC分类号： B60T8/24

CPC分类号： B60T8/1766 ,  B60T8/261 ,  B60T8/3225

摘要： A brake control system includes at least a pair of brake systems respectively connected to a pair of brake operating members L1, L2, and a control unit 10 for controlling the brake forces of the pair of brake systems interlockingly according to a predetermined distribution ratio by operating one of the pair of brake operating members L1, L2. The control unit 10 executes a decreasing control on the brake forces in such a manner that, when releasing the pair of brake operating members L1, L2, the control unit 10 decreases both of the brake forces together, even in a state where the control unit performs the interlocking control so as to decrease the brake force of one of the brake system as the brake force of the other of the brake system is increased in accordance with the predetermined distribution ratio.

摘要翻译： 制动控制系统包括至少一对制动系统，分别连接到一对制动操作构件L 1，L 2和控制单元10，用于根据预定的分配比例互锁地控制该对制动系统的制动力 通过操作一对制动操作构件L 1，L 2中的一个。 控制单元10以这样的方式执行对制动力的减小的控制，即当释放一对制动操作构件L 1，L 2时，控制单元10将两个制动力降低在一起，即使在 控制单元执行联锁控制，以便随着制动系统中另一个制动系统的制动力根据预定的分配比而增加制动系统中的一个的制动力。

公开(公告)号：US07042810B2

公开(公告)日：2006-05-09

申请号：US09772894

申请日：2001-01-31

申请人： Junichi Akiyama ,  Katsutaro Ichihara ,  Genichi Hatakoshi

发明人： Junichi Akiyama ,  Katsutaro Ichihara ,  Genichi Hatakoshi

IPC分类号： G11B11/105 ,  G11B15/64 ,  G11B5/02

CPC分类号： B82Y10/00 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head and a magnetic recording apparatus having the magnetic recording head built in are disclosed. The magnetic recording head is capable of recording magnetic information by heating a recording unit of a recording medium and raising its temperature to reduce magnetic coercive force and then applying recording magnetic field to the recording unit having the reduced coercive force. The magnetic recording head has a light absorbing film having an aperture, a laser device emitting and directing light through the aperture to the recording medium to head the recording unit and raise its temperature, and a recording magnetic pole for applying the recording magnetic field to the recording unit. In the aperture, an aperture width W1 is along a polarizing direction of the light emitted from the laser device while an aperture width W2 is approximately perpendicular to the polarizing direction of the aperture width W1, and the aperture width W1 is shorter than the aperture width W2. The heating source such as a laser device recedes from the medium to provide a unique configuration where a tip of the recording magnetic pole protrudes ahead of the heating source, and hence, heating beam and the recording magnetic pole can be located close to each other without losing sufficient energy density to heat the medium.

摘要翻译： 公开了一种热辅助磁记录头和内置磁记录头的磁记录装置。 磁记录头能够通过加热记录介质的记录单元并提高其温度来降低磁矫顽力，然后将记录磁场施加到具有降低的矫顽力的记录单元上来记录磁信息。 磁记录头具有具有孔的光吸收膜，激光装置发射并引导光通过孔到达记录介质以使记录单元顶起并升高其温度;以及记录磁极，用于将记录磁场施加到 录音单元 在孔径中，孔径宽度W1沿着从激光装置发出的光的偏振方向，而孔径宽度W2大致垂直于孔径宽度W1的偏振方向，并且孔径宽度W1短于孔径宽度 W2。 诸如激光装置的加热源从介质中退出以提供独特的配置，其中记录磁极的尖端在加热源的前方突出，因此，加热束和记录磁极可以彼此靠近而没有 失去足够的能量密度来加热介质。

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。