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    Semiconductor laser and method of fabricating same
    1.
    发明授权
    Semiconductor laser and method of fabricating same 有权
    半导体激光器及其制造方法

    公开(公告)号：US06400742B1

    公开(公告)日：2002-06-04

    申请号：US09498372

    申请日：2000-02-04

    申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

    摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

    摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

    Manufacturing method of semiconductor laser with non-absorbing mirror structure
    5.
    发明授权
    Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
    具有非吸收镜结构的半导体激光器的制造方法

    公开(公告)号：US5181218A

    公开(公告)日：1993-01-19

    申请号：US619606

    申请日：1990-11-29

    申请人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

    CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3206 ,  H01S5/32325

    摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

    摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。 双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。 通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。 在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。 在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。 因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

    Semiconductor laser diode
    7.
    发明授权
    Semiconductor laser diode 有权
    半导体激光二极管

    公开(公告)号：US06873634B2

    公开(公告)日：2005-03-29

    申请号：US09964463

    申请日：2001-09-28

    申请人： Masaaki Onomura ,  Mariko Suzuki ,  Masayuki Ishikawa

    发明人： Masaaki Onomura ,  Mariko Suzuki ,  Masayuki Ishikawa

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/34333

    摘要： The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.

    摘要翻译： 本发明提供一种氮化物半导体激光器，通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。 一种半导体激光二极管，包括：GaN层; 形成在所述GaN层上并由Al x Ga 1-x N（0.04 <= x <= 0.08）制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区，所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。