公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。

公开(公告)号：US6118801A

公开(公告)日：2000-09-12

申请号：US373624

申请日：1999-08-13

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.

摘要翻译： 氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。 在p-包层上形成具有条纹开口部分的GaN电流阻挡层。 形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。 有源层具有通过循环堆叠具有不同带隙并且为10nm以上厚度的两种类型的InGaAlN层形成的循环结构构成的多量子阱结构。

公开(公告)号：US06359919B1

公开(公告)日：2002-03-19

申请号：US09642646

申请日：2000-08-22

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5323

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2202 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or less thick.

摘要翻译： 氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。 在p-包层上形成具有条纹开口部分的GaN电流阻挡层。 形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。 有源层具有通过循环堆叠具有不同带隙并且为10nm或更小厚度的两种类型的InGaAlN层而形成的循环结构的多量子阱结构。

公开(公告)号：US5987048A

公开(公告)日：1999-11-16

申请号：US900121

申请日：1997-07-25

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US06242761B1

公开(公告)日：2001-06-05

申请号：US09026941

申请日：1998-02-20

申请人： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

发明人： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

IPC分类号： H01L2972

CPC分类号： H01L33/145 ,  H01L33/32 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/32341

摘要： In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.

摘要翻译： 为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足 注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层 ，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。 通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。 当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

公开(公告)号：US20070228390A1

公开(公告)日：2007-10-04

申请号：US11668218

申请日：2007-01-29

申请人： Yasushi HATTORI ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

发明人： Yasushi HATTORI ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/01021 ,  H01L2924/01066 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/00012

摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

摘要翻译： 提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层 形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层 。 荧光体层的表面具有反射荧光体颗粒的形状的突起。

公开(公告)号：US08294165B2

公开(公告)日：2012-10-23

申请号：US11668218

申请日：2007-01-29

申请人： Yasushi Hattori ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

发明人： Yasushi Hattori ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

IPC分类号： H01L33/50 ,  H01L33/54 ,  H01L33/56

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/01021 ,  H01L2924/01066 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/00012

摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

摘要翻译： 提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层 形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层 。 荧光体层的表面具有反射荧光体颗粒的形状的突起。

公开(公告)号：US07525127B2

公开(公告)日：2009-04-28

申请号：US11287236

申请日：2005-11-28

申请人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masahiro Yamamoto ,  Naomi Shida ,  Kei Kaneko ,  Genichi Hatakoshi

发明人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masahiro Yamamoto ,  Naomi Shida ,  Kei Kaneko ,  Genichi Hatakoshi

IPC分类号： H01L27/15

CPC分类号： H01L33/507 ,  H01L33/505 ,  H01L33/60 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/0228 ,  H01S5/183 ,  H01S5/32341 ,  H01S5/327 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element are absorbed within the semiconductor light emitting device.

摘要翻译： 半导体发光元件包括发射紫外范围和可见光范围的光束的半导体发光元件，以及吸收来自半导体发光元件的光束的荧光元件，并且沿与第一半导体发光元件不同的光取出方向输出可见光束 发光方向。 从发光元件发射的光束被吸收在半导体发光器件内。