利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

46 条记录 (耗时 0.03 秒)

    Semiconductor laser and method of fabricating same
    2.
    发明授权
    Semiconductor laser and method of fabricating same 有权
    半导体激光器及其制造方法

    公开(公告)号：US06400742B1

    公开(公告)日：2002-06-04

    申请号：US09498372

    申请日：2000-02-04

    申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

    摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

    摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

    Semiconductor light-emitting device with compound semiconductor layer
    7.
    发明授权
    Semiconductor light-emitting device with compound semiconductor layer 失效
    具有化合物半导体层的半导体发光器件

    公开(公告)号：US5488233A

    公开(公告)日：1996-01-30

    申请号：US208850

    申请日：1994-03-11

    申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/347

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01S5/347 ,  H01S5/209 ,  H01S5/2238 ,  H01S5/3077

    摘要： This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.

    摘要翻译： 本发明提供了一种半导体发光器件，其包括由周期表的第三和第五组中的元件的化合物半导体构成的半导体衬底，直接形成在半导体衬底的至少一部分上并由 至少含有In和P的化合物半导体和直接形成在第一化合物半导体层上并由元素周期表的第二和第六组元素的化合物半导体构成的第二化合物半导体。 通过这种布置，可以充分地防止半导体衬底与由周期表的第二组和第六组中的元件的化合物半导体组成的第二化合物半导体层之间的界面中的缺陷的发生。

    Semiconductor light emitting device and method of manufacturing the same
    8.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 失效
    半导体发光器件及其制造方法

    公开(公告)号：US6060335A

    公开(公告)日：2000-05-09

    申请号：US20900

    申请日：1998-02-09

    申请人： John Rennie ,  Genichi Hatakoshi ,  Masaaki Onomura

    发明人： John Rennie ,  Genichi Hatakoshi ,  Masaaki Onomura

    IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

    CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/34333 ,  Y10S148/095

    摘要： According to the present invention, a high-efficiency and high reliability GaN-based semiconductor light emitting device having uniform light emission from the active layer, can be obtained by suppressing the defect density of the interface between the guide layer and cladding layer. When manufacturing the GaN-based semiconductor light emitting device, the growth temperature and pressure are increased, or the carrier gas flow rate and ammonia flow rate necessary for efficiently growing p-GaAlN are increased, in the vicinity of the interface between the upper p-GaN guide layer and p-AlGaN cladding layer in particular, and thus a method and structure, capable of suppressing these high defect densities generated, can be provided. By selecting appropriate conditions, namely whether the increment in the temperature and pressure, and the increment in the flow rates of the carrier gas and ammonia should be carried out during the growth of the cladding layer or after, or they should be carried out at the same time or independently, or by inserting an InAlGaN or InGaN buffering layer for preventing the generation of defects, between the waveguide layer and cladding layer, the defect densities can be very much decreased.

    摘要翻译： 根据本发明，通过抑制引导层和包层之间的界面的缺陷密度，可以获得具有来自有源层的均匀发光的高效率和高可靠性的GaN基半导体发光器件。 当制造GaN基半导体发光器件时，生长温度和压力增加，或者有效地生长p-GaAlN所需的载气流量和氨流量增加，在上p- GaN引导层和p-AlGaN包覆层，因此可以提供能够抑制所产生的高缺陷密度的方法和结构。 通过选择适当的条件，即是否应在包层生长过程中或之后进行载运气体和氨的流量的升高和温度和压力的增加，或者应在 或者通过在波导层和包层之间插入用于防止缺陷产生的InAlGaN或InGaN缓冲层，可以非常大地降低缺陷密度。