公开(公告)号：US20230335674A1

公开(公告)日：2023-10-19

申请号：US18028603

申请日：2020-09-28

Applicant: LG ELECTRONICS INC.

Inventor： Chilkeun PARK ,  Wonjae CHANG ,  Junghoon KIM

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/44

CPC classification number: H01L33/20 ,  H01L25/0753 ,  H01L33/44 ,  H01L2933/0025

Abstract: The embodiment relates to a semiconductor light emitting device and a display device including the same. The semiconductor light emitting device according to the embodiment can include the second electrode layer 120, the light emitting structure 110 disposed on the second electrode layer 120, a protruding mesa semiconductor layer 100P disposed on the light emitting structure 110 and a passivation layer 130 disposed on a side surface of the light emitting structure 110. The protruding mesa semiconductor layer 100P can include a first conductivity type mesa semiconductor layer 111b and an undoped mesa semiconductor layer 105b.

公开(公告)号：US20220367774A1

公开(公告)日：2022-11-17

申请号：US17761516

申请日：2019-09-18

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo KIM ,  Sunghyun MOON ,  Jisoo KO ,  Jungsub KIM ,  Bongchu SHIM ,  Wonjae CHANG

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

Abstract: Discussed is a manufacturing method of a display device. The manufacturing method includes forming a semiconductor light emitting element comprising an assembly blocking layer formed on one surface of the semiconductor light emitting element; preparing an assembly substrate comprising an assembly recess and configured such that the semiconductor light emitting element is assembled in the assembly recess; putting the semiconductor light emitting element into a chamber filled with a fluid; locating the assembly substrate on an upper surface of the chamber, and assembling the semiconductor light emitting element in the assembly recess of the assembly substrate using a magnetic field and an electric field; and transferring the semiconductor light emitting element assembled in the assembly recess of the assembly substrate to a wiring substrate.

公开(公告)号：US20200035852A1

公开(公告)日：2020-01-30

申请号：US16520014

申请日：2019-07-23

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Junyong AHN ,  Hyunho LEE

IPC: H01L31/18 ,  C23C16/24 ,  C23C16/455 ,  C23C16/458

Abstract: Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

公开(公告)号：US20190334049A1

公开(公告)日：2019-10-31

申请号：US16504995

申请日：2019-07-08

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0745 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0368

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

公开(公告)号：US20190319140A1

公开(公告)日：2019-10-17

申请号：US16456915

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

公开(公告)号：US20170222085A1

公开(公告)日：2017-08-03

申请号：US15418336

申请日：2017-01-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/1864 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.