公开(公告)号：US07358651B2

公开(公告)日：2008-04-15

申请号：US11109108

申请日：2005-04-18

Applicant: Richard C. Ruby ,  Graham M. Flower ,  John D. Larson, III ,  Mark A. Unkrich

Inventor： Richard C. Ruby ,  Graham M. Flower ,  John D. Larson, III ,  Mark A. Unkrich

IPC: H01L41/08

CPC classification number: G01K11/265 ,  G01L1/165 ,  G01L9/0025 ,  H03H9/0542

Abstract: An apparatus and method for detecting a target environmental variable (TEV). A first film-bulk acoustic resonator (FBAR) oscillator that includes a first FBAR with a first response to the target environmental variable generates a first frequency. A second film-bulk acoustic resonator (FBAR) oscillator that includes a second FBAR with a second response to the target environmental variable generates a second frequency. A circuit that is coupled to the first FBAR oscillator and the second FBAR oscillator determines the target environmental variable (e.g., changes in the TEV) based on the first frequency and the second frequency.

Abstract translation: 一种用于检测目标环境变量（TEV）的装置和方法。 包括对目标环境变量具有第一响应的第一FBAR的第一薄膜体声波谐振器（FBAR）振荡器产生第一频率。 包括具有对目标环境变量的第二响应的第二FBAR的第二薄膜 - 体声波谐振器（FBAR）振荡器产生第二频率。 耦合到第一FBAR振荡器和第二FBAR振荡器的电路基于第一频率和第二频率来确定目标环境变量（例如，TEV的变化）。

公开(公告)号：US07038559B2

公开(公告)日：2006-05-02

申请号：US10785525

申请日：2004-02-23

Applicant: Richard C. Ruby ,  John D. Larson, III

Inventor： Richard C. Ruby ,  John D. Larson, III

IPC: H03H9/54 ,  H03H9/05 ,  H03H9/09

CPC classification number: H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

公开(公告)号：US06787048B2

公开(公告)日：2004-09-07

申请号：US09799202

申请日：2001-03-05

Applicant: Paul D. Bradley ,  Richard C. Ruby ,  John D. Larson, III

Inventor： Paul D. Bradley ,  Richard C. Ruby ,  John D. Larson, III

IPC: H01B1300

CPC classification number: H03H9/564 ,  H03H3/04 ,  H03H2003/0428 ,  H03H2003/0471 ,  H04R17/10

Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.

Abstract translation: 公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。 通过在底部电极层上制造底部电极层和压电（PZ）层，在衬底上制造谐振器。 部分蚀刻PZ层的选定部分。 然后，在PZ层的选定部分上制造顶部电极。

公开(公告)号：US06714102B2

公开(公告)日：2004-03-30

申请号：US09798496

申请日：2001-03-01

Applicant: Richard C. Ruby ,  Paul Bradley ,  Yury Oshmyansky ,  Domingo A. Figueredo

Inventor： Richard C. Ruby ,  Paul Bradley ,  Yury Oshmyansky ,  Domingo A. Figueredo

IPC: H03H900

CPC classification number: H03H3/02

Abstract: A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.

Abstract translation: 一种用于在衬底上制造声共振器的方法，例如薄膜体声波谐振器（FBAR）。 蚀刻凹陷并填充牺牲材料。 FBAR制造在跨越凹陷的衬底上，FBAR具有蚀刻孔。 凹陷可以包括蚀刻通道，在这种情况下，FBAR可以包括与蚀刻通道对准的蚀刻孔。 由施加该技术产生的共振器悬浮在空气中并且包括至少一个蚀刻孔，并且可以包括蚀刻通道。

公开(公告)号：US06617249B2

公开(公告)日：2003-09-09

申请号：US09799148

申请日：2001-03-05

Applicant: Richard C. Ruby ,  John D. Larson, III ,  Paul D. Bradley

Inventor： Richard C. Ruby ,  John D. Larson, III ,  Paul D. Bradley

IPC: H01L21302

CPC classification number: H03H9/564 ,  H03H3/04 ,  H03H2003/0428 ,  H03H2003/0471 ,  Y10S438/926 ,  Y10S438/94 ,  Y10S438/942 ,  Y10S438/97 ,  Y10S438/976

Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.

Abstract translation: 公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。 通过引入质量负载顶部电极层在基板上制造FBAR。 对于具有多个谐振器的衬底，仅为选定的谐振器引入顶部质量负载电极层，以在同一衬底上提供具有不同谐振频率的谐振器。

公开(公告)号：US06566979B2

公开(公告)日：2003-05-20

申请号：US09799153

申请日：2001-03-05

Applicant: John D. Larson, III ,  Richard C. Ruby ,  Paul D. Bradley

Inventor： John D. Larson, III ,  Richard C. Ruby ,  Paul D. Bradley

IPC: H03H956

CPC classification number: H03H9/564 ,  H03H3/04 ,  H03H2003/0428 ,  H03H2003/0471 ,  Y10T29/42

Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. A resonator is fabricated on a substrate, and its top electrode 56 is oxidized to form a oxide layer 58. For a substrate having multiple resonators, the top electrode 56 of only selected resonator is oxidized to provide resonators having different resonance frequencies on the same substrate.

公开(公告)号：US06262637B1

公开(公告)日：2001-07-17

申请号：US09324618

申请日：1999-06-02

Applicant: Paul D. Bradley ,  John D. Larson, III ,  Richard C. Ruby

Inventor： Paul D. Bradley ,  John D. Larson, III ,  Richard C. Ruby

IPC: H03H954

CPC classification number: H03H9/568 ,  H03H9/706

Abstract: An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).

Abstract translation: 一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。 第一带通滤波器包括具有并联和串联元件的第一梯形电路。 第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。 串联电路包括与第二带通滤波器串联的90°移相器。 第二带通滤波器包括具有分路和串联元件的第二梯形电路。 第二梯形电路的每个元件包括膜体声波谐振器。 一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。

公开(公告)号：US09197185B2

公开(公告)日：2015-11-24

申请号：US13601384

申请日：2012-08-31

Applicant: Qiang Zou ,  Zhiqiang Bi ,  Kristina Lamers ,  Richard C. Ruby

Inventor： Qiang Zou ,  Zhiqiang Bi ,  Kristina Lamers ,  Richard C. Ruby

IPC: H03H9/17 ,  H03H3/04 ,  H03H9/02 ,  H03H9/13

CPC classification number: H03H3/04 ,  H03H9/02102 ,  H03H9/131 ,  H03H9/173 ,  H03H9/175

Abstract: An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer.

Abstract translation: 声谐振器包括衬底和设置在衬底上的第一复合电极。 第一复合电极包括第一和第二导电层和设置在第一和第二导电层之间的第一温度补偿层。 所述第二导电层在所述第一温度补偿层的至少一侧与所述第一导电层形成第一电接触，并且所述第一电接触使所述第一温度补偿层的第一电容分量电短路。

公开(公告)号：US08390397B2

公开(公告)日：2013-03-05

申请号：US12748640

申请日：2010-03-29

Applicant: Tiberiu Jamneala ,  Richard C. Ruby

Inventor： Tiberiu Jamneala ,  Richard C. Ruby

IPC: H03H9/70 ,  H03H9/54

CPC classification number: H03H9/584 ,  H03H9/587 ,  H03H9/589

Abstract: In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.

Abstract translation: 根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。 第一电阻小于第二电阻。 还公开了一种包括耦合谐振滤波器（CRF）的通信设备。

公开(公告)号：US08232845B2

公开(公告)日：2012-07-31

申请号：US12891039

申请日：2010-09-27

Applicant: Richard C. Ruby ,  Martha K. Small

Inventor： Richard C. Ruby ,  Martha K. Small

IPC: H03B1/00

CPC classification number: H03H9/1014 ,  H01L23/10 ,  H01L2924/0002 ,  H03H9/0538 ,  H03L1/04 ,  H01L2924/00

Abstract: A device includes: a base substrate having a bonding pad and a peripheral pad, the peripheral pad encompassing the bonding pad; an acoustic resonator on the base substrate; a cap substrate having a bonding pad seal and a peripheral pad seal, the bonding pad seal bonding around the perimeter of the bonding pad and the peripheral pad seal bonding with the peripheral pad to define a hermetically sealed volume between the cap substrate and the base substrate, the cap substrate having a through hole therein over the bonding pad providing access for a connection to the bonding pad; a low-resistivity material layer region disposed on a portion of a surface of the cap substrate disposed inside the hermetically sealed volume, the material layer region being isolated from the bonding pad seal; and electronic circuitry disposed in the material layer region and electrical connected with the acoustic resonator.

Abstract translation: 一种器件包括：具有接合焊盘和外围焊盘的基底衬底，所述外围焊盘包围所述接合焊盘; 在基底基板上的声共振器; 具有接合焊盘密封件和外围焊盘密封件的盖衬底，所述接合焊盘密封件围绕所述接合焊盘的周边结合，并且所述外围焊盘密封件与所述外围焊盘接合，以限定所述盖基板和所述基板之间的气密密封体积 所述盖基板在所述焊盘上方具有通孔，所述通孔提供用于与所述焊盘的连接的通路; 所述低电阻率材料层区域设置在所述盖衬底的设置在所述密封体内的表面的一部分上，所述材料层区域与所述焊盘密封件隔离; 以及设置在材料层区域中并与声谐振器电连接的电子电路。