公开(公告)号：US20130289912A1

公开(公告)日：2013-10-31

申请号：US13779999

申请日：2013-02-28

申请人： Jun Liu ,  Hui Xue ,  Marcel Dominik Nickel ,  Ti-chiun Chang ,  Mariappan S. Nadar ,  Alban Lefebvre ,  Edgar Mueller ,  Qiu Wang ,  Zhili Yang ,  Nirmal Janardhanan ,  Michael Zenge

发明人： Jun Liu ,  Hui Xue ,  Marcel Dominik Nickel ,  Ti-chiun Chang ,  Mariappan S. Nadar ,  Alban Lefebvre ,  Edgar Mueller ,  Qiu Wang ,  Zhili Yang ,  Nirmal Janardhanan ,  Michael Zenge

IPC分类号： G01R33/24

CPC分类号： G01R33/243 ,  G01R33/246 ,  G01R33/5611

摘要： A method for estimating a coil sensitivity map for a magnetic resonance (MR) image includes providing (61) a matrix A of sliding blocks of a 2D image of coil calibration data, calculating (62) a left singular matrix V∥ from a singular value decomposition of A corresponding to τ leading singular values, calculating (63) P=V∥V∥H, calculating (64) a matrix S that is an inverse Fourier transform of a zero-padded matrix P, and solving (65) MHcr=(Sr)Hcr for cr, where cr is a vector of coil sensitivity maps for all coils at spatial location r, and M  ( ( 1 1 … 1 0 0 … 0 … … … 0 0 … 0 )  ( 0 0 … 0 1 1 … 1 … … … 0 0 … 0 )   …   ( 0 0 … 0 0 0 … 0 … … … 1 1 … 1 ) ) .

摘要翻译： 用于估计磁共振（MR）图像的线圈灵敏度映射的方法包括提供（61）线圈校准数据的2D图像的滑块的矩阵A，从奇异值计算（62）左奇异矩阵V∥ 计算（63）P = V || V | H，计算（64）作为零填充矩阵P的逆傅里叶变换的矩阵S，求解（65）MHcr = （Sr）Hcr，其中cr是空间位置r处所有线圈的线圈灵敏度图的向量，M（（1 1 ... 1 0 0 ... 0 ... ... ... 0 0 ... 0）0（0 0 ... 0 1 1 ... 1 ... ... ... 0 0 ... 0） 0 0 0 ... 0 ... ... ... 1 1 ... 1））。

公开(公告)号：US20130272061A1

公开(公告)日：2013-10-17

申请号：US13911917

申请日：2013-06-06

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

摘要翻译： 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US20130259343A1

公开(公告)日：2013-10-03

申请号：US13778446

申请日：2013-02-27

申请人： Jun Liu ,  Alban Lefebvre ,  Mariappan Nadar

发明人： Jun Liu ,  Alban Lefebvre ,  Mariappan Nadar

IPC分类号： G06T11/00

CPC分类号： G06T11/003 ,  G01R33/5611

摘要： A method for reconstructing parallel magnetic resonance images includes providing a set of acquired k-space MR image data y, and finding a target MR image x that minimizes ½∥Fv−y∥22+λ∥z∥1 where v=Sx and z=Wx where S is a diagonal matrix containing sensitivity maps of coil elements in an MR receiver array, F is an FFT matrix, W is a redundant Haar wavelet matrix, and λ≧0 is a regularization parameter, by updating x k + 1 = ( μ 1  I + μ 3  S H  S ) - 1  [ μ 1  W H  ( z k - b z k ) + μ 3  S H  ( v k - b v k ) ] ,  z k + 1 = soft  ( Wx k + 1  b z k , 1 μ 1 )   where soft  ( x , T ) = { x + T if   x ≤ - T , 0 if    x  ≤ T , x - T if   x ≥ T ,   and   v k + 1 = ( F H  F + μ 3  I ) - 1  [ F H  y + μ 3  ( Sx k + 1 + b v k ) ] , where k is an iteration counter, μ1 and μ3 are parameters of an augmented Lagrangian function, and bz and bv are dual variables of the augmented Lagrangian.

摘要翻译： 重建并行磁共振图像的方法包括提供一组获取的k空间MR图像数据y，并找到最小化½|Fv-y‖22+λ‖z‖1的目标MR图像x，其中v = Sx和z = Wx其中S是包含MR接收器阵列中的线圈元件的灵敏度映射的对角矩阵，F是FFT矩阵，W是冗余Haar小波矩阵，并且λ> = 0是正则化参数，通过更新xk + 1 = （μ1 I +μ3 SH SH） - 1（zk-bzk）+ mu 3 SH（vk-bvk）]，zk + 1 =软（Wx k + 1，bzk，1 mu 1）其中软（x，T）= {x + T如果x x = = T，如果x<= T，x - 其中k是迭代，其中k是迭代，其中k是迭代，其中k是迭代，其中k是迭代 计数器，mu1和mu3是增强的拉格朗日函数的参数，bz和bv是增强的拉格朗日的双重变量 ianㄧ。

公开(公告)号：US08537592B2

公开(公告)日：2013-09-17

申请号：US13088238

申请日：2011-04-15

申请人： Jun Liu

发明人： Jun Liu

IPC分类号： G11C11/00

CPC分类号： H01L45/1608 ,  G11C5/02 ,  G11C5/06 ,  G11C13/0004 ,  G11C2213/71 ,  H01L21/302 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165

摘要： An array of nonvolatile memory cells includes a plurality of vertically stacked tiers of nonvolatile memory cells. The tiers individually include a first plurality of horizontally oriented first electrode lines and a second plurality of horizontally oriented second electrode lines crossing relative to the first electrode lines. Individual of the memory cells include a crossing one of the first electrode lines and one of the second electrode lines and material there-between. Specifically, programmable material, a select device in series with the programmable material, and current conductive material in series between and with the programmable material and the select device are provided in series with such crossing ones of the first and second electrode lines. The material and devices may be oriented for predominant current flow in defined horizontal and vertical directions. Method and other implementations and aspects are disclosed.

公开(公告)号：US08523592B1

公开(公告)日：2013-09-03

申请号：US13477201

申请日：2012-05-22

申请人： Jun Liu ,  Yong Quan Wu

发明人： Jun Liu ,  Yong Quan Wu

IPC分类号： H01R13/62

CPC分类号： H01R13/506 ,  G06K13/0862 ,  H01R12/88 ,  H01R13/447 ,  H01R13/6581

摘要： An electrical connector includes a base, a cover and at least one elastic member. The base is disposed with at least one fastening portion and at least one pivoting portion. The cover covers on the base, disposed with at least one locking portion correspondingly locking the fastening portion, and capable of being opened or closed relative to the base about the pivoting portion. The at least one elastic member press against the base. When the locking portion unlocks the fastening portion, the elastic member pops up automatically due to elasticity, so that an operating space is formed below the cover to allow an operator to open the cover with fingers, which facilitates operation and does not cause injuries of the fingers, thereby ensuring safe use.

摘要翻译： 电连接器包括底座，盖和至少一个弹性构件。 底座设置有至少一个紧固部分和至少一个枢转部分。 盖子覆盖在基座上，其中设置有至少一个锁定部分，相应地锁定紧固部分，并能够围绕枢转部分相对于基座打开或关闭。 所述至少一个弹性构件压靠所述基座。 当锁定部分解除紧固部分时，弹性部件由于弹性而自动弹起，从而在盖子的下方形成操作空间，以便操作者用手指打开盖子，这便于操作并且不会造成伤害 手指，从而确保安全使用。

公开(公告)号：US08488365B2

公开(公告)日：2013-07-16

申请号：US13034031

申请日：2011-02-24

申请人： Jun Liu ,  Gurtej S. Sandhu

发明人： Jun Liu ,  Gurtej S. Sandhu

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/145 ,  H01L45/1608 ,  H01L45/165

摘要： Some embodiments include methods in which a memory cell is formed to have programmable material between first and second access lines, with the programmable material having two compositionally different regions. A concentration of ions and/or ion-vacancies may be altered in at least one of the regions to change a memory state of the memory cell and to simultaneously form a pn diode. Some embodiments include memory cells having programmable material with two compositionally different regions, and having ions and/or ion-vacancies diffusible into at least one of the regions. The memory cell has a memory state in which the first and second regions are of opposite conductivity type relative to one another.

摘要翻译： 一些实施例包括其中存储单元形成为在第一和第二访问线之间具有可编程材料的方法，其中可编程材料具有两个组成上不同的区域。 可以在至少一个区域中改变离子和/或离子空位的浓度以改变存储器单元的存储状态并同时形成pn二极管。 一些实施例包括具有两个组成不同区域的可编程材料并且具有可扩散到至少一个区域中的离子和/或离子空位的存储器单元。 存储单元具有其中第一和第二区域相对于彼此具有相反导电类型的存储状态。

公开(公告)号：US08482963B1

公开(公告)日：2013-07-09

申请号：US12629831

申请日：2009-12-02

申请人： Jun Liu ,  Yanzhong Xu ,  Shankar Sinha ,  Shih-Lin S. Lee ,  Jeffrey Xiaoqi Tung ,  Albert Ratnakumar ,  Qi Xiang ,  Irfan Rahim ,  Andy L. Lee ,  Jeffrey T. Watt ,  Srinivas Perisetty

发明人： Jun Liu ,  Yanzhong Xu ,  Shankar Sinha ,  Shih-Lin S. Lee ,  Jeffrey Xiaoqi Tung ,  Albert Ratnakumar ,  Qi Xiang ,  Irfan Rahim ,  Andy L. Lee ,  Jeffrey T. Watt ,  Srinivas Perisetty

IPC分类号： G11C11/00

CPC分类号： G11C11/412

摘要： Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.

摘要翻译： 不对称晶体管可以通过在晶体管的一个源极 - 漏极端子上而不是另一个产生凹穴注入来形成。 也可以使用具有不同功函数的第一和第二栅极导体的双栅结构来形成非对称晶体管。 可以通过堆叠相同通道类型的两个晶体管串联形成堆叠晶体管。 两个晶体管中的每一个的源极 - 漏极端子之一连接到公共节点。 两个晶体管的栅极也连接在一起。 两个晶体管可以具有不同的阈值电压。 位于堆叠晶体管中较高的晶体管的阈值电压可以具有比堆叠晶体管中的另一个晶体管更低的阈值电压。 堆叠的晶体管可用于减少诸如存储器单元的电路中的漏电流。 不对称晶体管也可用于存储器单元中以减少泄漏。

公开(公告)号：US08472240B2

公开(公告)日：2013-06-25

申请号：US13108385

申请日：2011-05-16

申请人： Jun Liu ,  Gurtej S. Sandhu

发明人： Jun Liu ,  Gurtej S. Sandhu

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08

摘要： Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.

公开(公告)号：US20130153823A1

公开(公告)日：2013-06-20

申请号：US13643165

申请日：2010-04-30

申请人： Mingjie Zhou ,  Jun Liu ,  Wenbo Ma

发明人： Mingjie Zhou ,  Jun Liu ,  Wenbo Ma

IPC分类号： C09K11/77

CPC分类号： C09K11/7721 ,  C09K11/02 ,  C09K11/7774

摘要： A rare earth-aluminium/gallate based fluorescent material and manufacturing method thereof are provided. Said rare earth-aluminium/gallate based fluorescent material comprises a core, and a shell which coats said core, wherein said core is a metal nanoparticle, and said shell is a fluorescent powder of chemical formula (Y1-xCex)3(Al1-yGay)5O12, 0

摘要翻译： 提供稀土 - 铝/没食子酸酯基荧光材料及其制造方法。 所述稀土 - 铝/没食子酸酯基荧光材料包括芯和覆盖所述芯的壳，其中所述芯是金属纳米颗粒，所述壳是化学式（Y1-xCex）3（Al1-yGay）的荧光粉末 ）5O12,0

公开(公告)号：US08462544B2

公开(公告)日：2013-06-11

申请号：US13555940

申请日：2012-07-23

申请人： Jun Liu ,  Gurtej Sandhu

发明人： Jun Liu ,  Gurtej Sandhu

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

摘要翻译： 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。