摘要:
Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
摘要:
Integrated circuits with memory elements are provided. The memory elements may be arranged in a memory block. The memory block may include cross-coupled inverters that store data. The stored data may be used to program pass transistors. Transistors in the memory block may be stressed. Depending on the type of stress-inducing layer used, a tensile stress or a compressive stress may be built in into the transistors. Stressed transistors may help improve the routing speed of the memory block. Stressed transistors may be implemented using dual gate-oxide process.
摘要:
Integrated circuits with multiport memory elements may be provided. A multiport memory element may include a latching circuit, a first set of address transistors, and a second set of address transistors. The latching circuit may include cross-coupled inverters, each of which includes a pull-up transistor and a pull-down transistor. The first set of address transistors may couple the latching circuit to a write port, whereas the second set of address transistors may couple the latching circuit to a read port. The pull-down transistors and the second set of address transistors may have body bias terminals that are controlled by a control signal. During data loading operations, the control signal may be temporarily elevated to weaken the pull-down transistors and the second set of address transistors to improve the write margin of the multiport memory element.
摘要:
Integrated circuits with multiport memory elements may be provided. A multiport memory element may include a latching circuit, a first set of address transistors, and a second set of address transistors. The latching circuit may include cross-coupled inverters, each of which includes a pull-up transistor and a pull-down transistor. The first set of address transistors may couple the latching circuit to a write port, whereas the second set of address transistors may couple the latching circuit to a read port. The pull-down transistors and the second set of address transistors may have body bias terminals that are controlled by a control signal. During data loading operations, the control signal may be temporarily elevated to weaken the pull-down transistors and the second set of address transistors to improve the write margin of the multiport memory element.
摘要:
Integrated circuits with memory elements are provided. A memory element may include a storage circuit coupled to data lines through access transistors. Access transistors may be used to read data from and write data into the storage circuit. An access transistor may have asymmetric source-drain resistances. The access transistor may have a first source-drain that is coupled to a data line and a second source-drain that is coupled to the storage circuit. The second source-drain may have a contact resistance that is greater than the contact resistance associated with the first source-drain. Access transistors with asymmetric source-drain resistances may have a first drive strength when passing a low signal and a second drive strength when passing a high signal to the storage circuit. The second drive strength may be less than the first drive strength. Access transistors with asymmetric drive strengths may be used to improve memory read/write performance.
摘要:
Disclosed are apparatus and devices for programming and operating a programmable memory array portion coupled with a leakage reduction circuit. At the leakage reduction circuit, a frame bias signal that indicates a majority state of the memory array portion can be received. During idle states of the programmable memory array portion, at least one shared bit line of the memory array portion can be selectively biased based on the received frame bias signal. In one aspect, a first one of two bit lines is biased to a first state, while the second one of the two bits lines is biased to a second state that is opposite the first state. In a further aspect, the first state is a same state as the majority state of the memory array portion.
摘要:
Integrated circuits may have arrays of memory elements. Data may be loaded into the memory elements and read from the memory elements using data lines. Address lines may be used to apply address signals to write address transistors and read circuitry. A memory element may include a bistable storage element. Read circuitry may be coupled between the bistable storage element and a data line. The read circuitry may include a data storage node. A capacitor may be coupled between the data storage node and ground and may be used in storing preloaded data from the bistable storage element. The read circuitry may include a transistor that is coupled between the bistable storage element and the data storage node and a transistor that is coupled between the data storage node and the data line.
摘要:
A semiconductor device includes a core memory array and a periphery area. The core memory array area includes a group of memory cells. The periphery area includes a group of select transistors. The select transistors are formed at substantially the same pitch as the memory cells in the core memory array and with substantially the same channel length.
摘要:
A method of forming an electronic device including forming a first trench in a workpiece including a substrate, the first trench having side walls and a bottom surface extending for a width between the side walls and forming a charge-storage layer along the side walls and bottom surface of the first trench. The method further includes implanting ions within the substrate underlying the bottom surface of the first trench to form an implant region and annealing the implant region, wherein after annealing, the implant region extends the width of the bottom surface and along a portion of the side walls.
摘要:
A memory device includes a number of memory cells and a bit line structure coupled to a group of the memory cells. The bit line structure includes an upper portion having a first width, and a lower portion having a second width, where the first width is less than the second width.