公开(公告)号：US20060084264A1

公开(公告)日：2006-04-20

申请号：US11292380

申请日：2005-11-23

Applicant: Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

Inventor： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract translation: 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘附的合适方法包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20060079084A1

公开(公告)日：2006-04-13

申请号：US11286007

申请日：2005-11-23

Applicant: Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

Inventor： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC: C25D5/34 ,  H01L21/44

CPC classification number: H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract translation: 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20060079083A1

公开(公告)日：2006-04-13

申请号：US11285993

申请日：2005-11-23

Applicant: Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

Inventor： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC: C25D5/34 ,  H01L21/44

CPC classification number: H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract translation: 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20050245083A1

公开(公告)日：2005-11-03

申请号：US11053050

申请日：2005-02-07

Applicant: Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

Inventor： Linlin Chen ,  Gregory Wilson ,  Paul McHugh ,  Robert Weaver ,  Thomas Ritzdorf

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  C25D17/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US20050230262A1

公开(公告)日：2005-10-20

申请号：US10828011

申请日：2004-04-20

Applicant: Linlin Chen

Inventor： Linlin Chen

IPC: C23C18/16 ,  C25D5/02 ,  C25D5/10 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76843 ,  C23C18/165 ,  C23C18/50 ,  C25D5/10 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76885

Abstract: Electrochemical processes and apparatus are described for forming a protective feature on the exposed surface of a metallized feature. The protective feature provides a diffusion barrier and protects the metallized feature from corrosion and contamination. Protective features formed from nickel, cobalt, and alloys of these metals are described.

Abstract translation: 描述了用于在金属化特征的暴露表面上形成保护特征的电化学方法和装置。 保护功能提供扩散屏障，并保护金属化特征免受腐蚀和污染。 描述了由这些金属的镍，钴和合金形成的保护特征。

公开(公告)号：US20050051436A1

公开(公告)日：2005-03-10

申请号：US10882664

申请日：2004-07-01

Applicant: Linlin Chen ,  Lyndon Graham ,  Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz

Inventor： Linlin Chen ,  Lyndon Graham ,  Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz

IPC: C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  H01L21/288 ,  H01L21/768 ,  H05K3/00

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Abstract translation: 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US06806186B2

公开(公告)日：2004-10-19

申请号：US09815931

申请日：2001-03-23

Applicant: Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

Inventor： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

IPC: H01L214763

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Abstract translation: 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US06730597B1

公开(公告)日：2004-05-04

申请号：US09667403

申请日：2000-09-21

Applicant: Jiong-Ping Lu ,  Linlin Chen ,  David Gonzalez, Jr. ,  Honglin Guo

Inventor： Jiong-Ping Lu ,  Linlin Chen ,  David Gonzalez, Jr. ,  Honglin Guo

IPC: H01L2144

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76877

Abstract: A pre-ECD wet surface treatment. After forming the barrier material (110) and seed layer (112), the surface of the seed layer (112) is treated with a water-based solution to remove surface contamination (122) and improve wettability. The ECD copper film (124) is then formed over the seed layer (112).

Abstract translation: 前ECD湿表面处理。 在形成阻挡材料（110）和种子层（112）之后，用水基溶液处理种子层（112）的表面以除去表面污染物（122）并改善润湿性。 然后在种子层（112）上形成ECD铜膜（124）。

公开(公告)号：US06565729B2

公开(公告)日：2003-05-20

申请号：US09732513

申请日：2000-12-07

Applicant: Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

Inventor： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC: C25D2112

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。