公开(公告)号：US06949722B2

公开(公告)日：2005-09-27

申请号：US10630783

申请日：2003-07-31

Applicant: Eric J. Strang ,  Wayne L. Johnson

Inventor： Eric J. Strang ,  Wayne L. Johnson

IPC: H01L21/26 ,  H01L21/00 ,  H01L21/687 ,  H05B3/68

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

公开(公告)号：US06806949B2

公开(公告)日：2004-10-19

申请号：US10331349

申请日：2002-12-31

Applicant: Audunn Ludviksson ,  Eric J. Strang

Inventor： Audunn Ludviksson ,  Eric J. Strang

IPC: G01N2100

CPC classification number: G01N21/68 ,  G01N21/64

Abstract: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

公开(公告)号：US09139910B2

公开(公告)日：2015-09-22

申请号：US12814301

申请日：2010-06-11

Applicant: Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

Inventor： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/463

Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

Abstract translation: 描述了在沉积系统中在衬底上沉积薄膜的方法。 该方法包括在沉积系统中设置包括多个加热元件区域的气体加热装置，并且独立地控制多个加热元件区域中的每一个的温度，其中多个加热元件区域中的每一个具有一个或多个电阻加热 元素。 另外，该方法包括在沉积系统中的衬底保持器上设置衬底，其中衬底保持器具有一个或多个温度控制区。 该方法还包括向耦合到沉积系统的气体加热装置提供成膜组合物，使用气体加热装置热解成膜组合物的一种或多种组分，并将成膜组合物引入到沉积系统中的基底上 在基板上沉积薄膜。

公开(公告)号：US08927907B2

公开(公告)日：2015-01-06

申请号：US13307176

申请日：2011-11-30

Applicant: Steven T. Fink ,  Eric J. Strang

Inventor： Steven T. Fink ,  Eric J. Strang

IPC: H05B3/02 ,  F25B21/02 ,  H01L21/67

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US08296687B2

公开(公告)日：2012-10-23

申请号：US10673506

申请日：2003-09-30

Applicant: Eric J. Strang ,  Andrej Mitrovic

Inventor： Eric J. Strang ,  Andrej Mitrovic

IPC: G06F17/50

CPC classification number: G05B19/41885 ,  G05B2219/32364 ,  G05B2219/32385 ,  G05B2219/45031 ,  Y02P90/26 ,  Y02P90/86

Abstract: A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.

Abstract translation: 一种用于分析由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型进行第一原理模拟，以提供第一原理模拟结果; 并且第一原理模拟结果用于确定由半导体处理工具执行的过程中的故障。

公开(公告)号：US08073667B2

公开(公告)日：2011-12-06

申请号：US10673507

申请日：2003-09-30

Applicant: Eric J. Strang ,  Andrej Mitrovic

Inventor： Eric J. Strang ,  Andrej Mitrovic

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G06F17/5018 ,  G06F2217/10

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.

Abstract translation: 用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质包括输入与由半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于控制由半导体处理工具执行的处理。

公开(公告)号：US07740704B2

公开(公告)日：2010-06-22

申请号：US10875949

申请日：2004-06-25

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45574

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract translation: 一种用于执行原子层沉积（ALD）的处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为将第一处理气体和第二处理气体供应到处理室的气体注入系统。 气体注入系统被配置为在第一位置和第二位置处将第一处理气体和第二处理气体引入处理室，其中第一处理气体和第二处理气体中的至少一个交替地并且顺序地介于 第一个位置和第二个位置。

公开(公告)号：US07582186B2

公开(公告)日：2009-09-01

申请号：US10739127

申请日：2003-12-19

Applicant: Eric J. Strang ,  Steven T. Fink

Inventor： Eric J. Strang ,  Steven T. Fink

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32642 ,  H01L21/68735

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract translation: 被配置为联接到衬底保持器的聚焦环包括暴露于过程的第一表面; 与所述第一表面相对的第二表面，用于联接到所述衬底保持器的上表面; 用于面对衬底的周边的内部径向边缘; 和外部径向边缘。 第二表面还包括一​​个或多个接触特征，每个接触特征被配置为与形成在衬底保持器的上表面内的一个或多个接收特征配合。 聚焦环还可以包括用于将聚焦环机械地夹持到基板保持器的夹紧特征。 此外，可以将气体供应到驻留在聚焦环上的一个或多个接触特征与衬底保持器上的一个或多个接收特征之间的接触空间。

公开(公告)号：US07347901B2

公开(公告)日：2008-03-25

申请号：US10721500

申请日：2003-11-26

Applicant: Steven T. Fink ,  Eric J. Strang

Inventor： Steven T. Fink ,  Eric J. Strang

IPC: C23C16/00 ,  H05B3/68

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如气体或真空填充室）更低的导热系数的绝缘材料制成。

公开(公告)号：US07166233B2

公开(公告)日：2007-01-23

申请号：US10076099

申请日：2002-02-15

Applicant: Wayne L. Johnson ,  Eric J. Strang

Inventor： Wayne L. Johnson ,  Eric J. Strang

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32137 ,  H01L21/31116

Abstract: In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the chamber and allowing the field to interact with the process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate.

Abstract translation: 在用于通过以下方式对反应器室中的衬底进行等离子体辅助处理的方法：将至少一种工艺气体引入反应器室; 以及通过在所述室内建立RF电磁场并且允许所述场与所述工艺气体相互作用来在所述反应器室内产生等离子体，所述电磁场被控制为具有能够在至少两个值之间周期性变化的能级，所述至少两个值足以维持 等离子体，使得每个能级值与在衬底上分别不同的处理过程的性能相关联。