公开(公告)号：US06783658B2

公开(公告)日：2004-08-31

申请号：US10261949

申请日：2002-10-02

申请人： Yoshitaka Matsui ,  Hiroshi Kosukegawa ,  Masako Kodera ,  Naoto Miyashita

发明人： Yoshitaka Matsui ,  Hiroshi Kosukegawa ,  Masako Kodera ,  Naoto Miyashita

IPC分类号： B23H1100

CPC分类号： C25F3/00 ,  H01L21/32115

摘要： A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.

摘要翻译： 通过在阳极电极和对电极之间施加电压同时使阳极电极与靶材料的表面接触来对目标材料进行电抛光。 在电化学测量中，在0.1M高氯酸溶液内施加+ 2.5V的电压与银/氯化银电极相比，阳极电极由电流密度不高于10mA / cm 2的电极材料形成 使用恒电位仪

公开(公告)号：US5597341A

公开(公告)日：1997-01-28

申请号：US451226

申请日：1995-05-26

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5948205A

公开(公告)日：1999-09-07

申请号：US897570

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5653623A

公开(公告)日：1997-08-05

申请号：US357176

申请日：1994-12-13

申请人： Norio Kimura ,  Seiji Ishikawa ,  Masako Kodera ,  Atsushi Shigeta ,  Riichirou Aoki

发明人： Norio Kimura ,  Seiji Ishikawa ,  Masako Kodera ,  Atsushi Shigeta ,  Riichirou Aoki

IPC分类号： B24B53/007 ,  B24B53/017 ,  B24B7/04 ,  B24B29/02

CPC分类号： B24B53/017

摘要： A polishing apparatus for polishing a surface of a workpiece such as a semiconductor wafer is installed in a clean room. The polishing apparatus includes a polishing section having a turntable with an abrasive cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, a loading section for loading the workpiece to be polished onto the top ring, and an unloading section for unloading the workpiece which has been polished from the top ring. A cover covers an entire area of movement of the top ring including the polishing section, the loading section and the unloading section. An exhaust duct discharges air of an interior space of the cover to an outside of an installation space of the polishing apparatus.

摘要翻译： 用于抛光诸如半导体晶片的工件的表面的抛光装置安装在洁净室中。 抛光装置包括具有安装在其上表面上的研磨布的转台的抛光部分，用于支撑待抛光工件的顶环，并将工件压靠在研磨布上，用于将待抛光工件加载的装载部分 以及用于卸载已经从顶环抛光的工件的卸载部分。 盖子覆盖包括抛光部分，装载部分和卸载部分在内的顶环的整个运动区域。 排气管将盖的内部空间的空气排出到抛光装置的安装空间的外部。

公开(公告)号：US07101259B2

公开(公告)日：2006-09-05

申请号：US10694047

申请日：2003-10-28

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

IPC分类号： B24B49/00 ,  B24B51/00 ,  H01L21/00 ,  B24B1/00

CPC分类号： B24B37/345

摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

公开(公告)号：US20050148176A1

公开(公告)日：2005-07-07

申请号：US11074774

申请日：2005-03-09

申请人： Yoshitaka Matsui ,  Masako Kodera

发明人： Yoshitaka Matsui ,  Masako Kodera

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/02071 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76883

摘要： A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor. substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

摘要翻译： 一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自 由Ti，W和Cu和Al组成的组在其表面上暴露于半导体之上。 并且将溶解氢气的氢溶解溶液供给到该结构体的表面。

公开(公告)号：US06419557B2

公开(公告)日：2002-07-16

申请号：US09834730

申请日：2001-04-16

申请人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

发明人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

IPC分类号： B24B100

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： A polishing method including applying a polishing agent containing polishing grains and a surfactant onto an oxide film, which is formed on a substrate having a depressed portion and a protruding portion, wherein the surfactant is an organic compound including at least one hydrophilic group selected from the group consisting of COOH, COOM1, wherein M1 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a carboxyl group, SO3H and SO3M2, wherein M2 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a sulfo group; and polishing the film until the film is flattened without the occurrence of dishing.

摘要翻译： 一种抛光方法，包括将含有抛光颗粒和表面活性剂的抛光剂施加到形成在具有凹陷部分和突出部分的基底上的氧化物膜上，其中所述表面活性剂是包含至少一种选自以下的亲水基团的有机化合物： 由COOH，COOM1组成的基团，其中M1表示当取代羧基的SO3H和SO3M2的氢原子时可以形成盐的原子或官能团，其中M2表示可以形成盐的原子或官能团 当取代磺基的氢原子时; 并抛光膜，直到膜变平而不发生凹陷。

公开(公告)号：US5914275A

公开(公告)日：1999-06-22

申请号：US897324

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

公开(公告)号：US5830041A

公开(公告)日：1998-11-03

申请号：US743361

申请日：1996-11-04

申请人： Tamami Takahashi ,  Fumihiko Sakata ,  Norio Kimura ,  Masako Kodera ,  Atsushi Shigeta

发明人： Tamami Takahashi ,  Fumihiko Sakata ,  Norio Kimura ,  Masako Kodera ,  Atsushi Shigeta

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/16 ,  B24B7/22

CPC分类号： B24B37/013 ,  B24B49/16

摘要： A method and apparatus for determining a planar end point on a workpiece such as a semiconductor wafer in a polishing process for polishing the workpiece to a flat mirror finish. The workpiece having an uneven surface is held by a top ring and pressed against a polishing platen. The workpiece is moved relative to the polishing platen to polish the workpiece, and a change in a frictional force between the workpiece and the polishing platen is detected. A reference time when the workpiece having an uneven surface is polished to a flat surface is determined based on the change of the frictional force between the workpiece and the polishing platen. The time when a certain period of polishing time from the reference time elapses is determined as an endpoint on the workpiece.

摘要翻译： 一种用于在用于将工件抛光到平面镜面抛光的抛光工艺中确定诸如半导体晶片的工件上的平面终点的方法和装置。 具有不平坦表面的工件由顶环保持并压靠在研磨台板上。 工件相对于研磨台板移动以抛光工件，并且检测到工件和抛光台板之间的摩擦力的变化。 基于工件和研磨台板之间的摩擦力的变化，确定具有不平坦表面的工件被抛光到平坦表面的参考时间。 从参考时间经过一定时间的抛光时间经过的时间被确定为工件上的端点。

公开(公告)号：US5578531A

公开(公告)日：1996-11-26

申请号：US547581

申请日：1995-10-24

申请人： Masako Kodera ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Masako Kodera ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/31053 ,  H01L21/76819 ,  Y10S438/97

摘要： First through fourth wiring layers are formed on the surface of a silicon substrate, then a silicon oxide layer containing fluorine is deposited over the wiring layers and the silicon substrate, and then another silicon oxide layer containing no fluorine is deposited over the silicon oxide layer containing fluorine. Subsequently, the silicon oxide layer containing no fluorine is flattened by polishing it for a predetermined length of time when the silicon oxide layer containing no fluorine is polished, the silicon oxide layer containing fluorine serves as a stopper, since the polishing rate of the silicon oxide layer containing fluorine is lower than that of the silicon oxide layer containing no fluorine.

摘要翻译： 在硅衬底的表面上形成第一到第四布线层，然后在布线层和硅衬底上沉积含氟的氧化硅层，然后在不含氟的氧化硅层上沉积含有氟的氧化硅层， 氟。 随后，当不含氟的氧化硅层被研磨时，将不含氟的氧化硅层经过研磨而平坦化预定的时间长度，由于氧化硅的研磨速度， 含氟的层比不含氟的氧化硅层低。