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    Dislocation reduction in non-polar III-nitride thin films
    27.
    发明授权
    Dislocation reduction in non-polar III-nitride thin films 有权
    非极性III族氮化物薄膜的位错减少

    公开(公告)号：US08809867B2

    公开(公告)日：2014-08-19

    申请号：US11852908

    申请日：2007-09-10

    申请人： Michael D. Craven ,  Steven P. Denbaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Michael D. Craven ,  Steven P. Denbaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/15 ,  H01L21/20 ,  H01L21/02

    CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

    摘要翻译： 非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。 首先，将薄的图案化电介质掩模施加到种子层。 其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。 在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。 通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
    29.
    发明申请
    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS 有权
    非极性III型氮化物薄膜中的分离减少

    公开(公告)号：US20080135853A1

    公开(公告)日：2008-06-12

    申请号：US11852908

    申请日：2007-09-10

    申请人： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/15 ,  H01L21/20

    CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

    摘要翻译： 非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。 首先，将薄的图案化电介质掩模施加到种子层。 其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。 在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。 通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。