公开(公告)号：US06780245B2

公开(公告)日：2004-08-24

申请号：US10315170

申请日：2002-12-10

申请人： Kuniaki Horie ,  Akira Fukunaga

发明人： Kuniaki Horie ,  Akira Fukunaga

IPC分类号： B05C1108

CPC分类号： C23C24/087 ,  C23C8/02 ,  C23C24/106

摘要： A thin film of metal or metal compound is produced by preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least partly made of metal into a given organic solvent, applying the ultrafine particle dispersion liquid to a substrate, drying the ultrafine particle dispersion liquid to leave metal or metal compound particles on the substrate, heating the metal or metal compound particles to join the metal or metal compound particles, and annealing the metal or metal compound particles into a thin film.

摘要翻译： 通过将至少部分由金属制成的超微粒子分散在规定的有机溶剂中，通过将特细微粒分散液分散在基材上，将超细粒子分散液干燥，将超细粒子分散液干燥，得到金属或金属化合物的薄膜 在基板上留下金属或金属化合物颗粒，加热金属或金属化合物颗粒以接合金属或金属化合物颗粒，并将金属或金属化合物颗粒退火成薄膜。

公开(公告)号：US06519842B2

公开(公告)日：2003-02-18

申请号：US09731898

申请日：2000-12-08

申请人： Akira Fukunaga ,  Hiroshi Nagasawa

发明人： Akira Fukunaga ,  Hiroshi Nagasawa

IPC分类号： H05K334

CPC分类号： H05K3/3436 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/11505 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/29316 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/83815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K1/095 ,  H05K2201/0257 ,  H05K2201/10674 ,  Y02P70/613 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53178

摘要： Semiconductor devices can be mounted by the bump technique using compound metallic ultra-fine particles. Each particle comprises a core portion which is substantially a metallic component, with a coating layer chemically bound to the core portion, the coating layer being an organic substance. One of two bump technologies can be used to mount the semiconductor device, namely, forming under bump metals from the compound metallic ultra-fine particles, and forming ordinary solder balls on the under bump metals; or using paste balls comprising the compound metallic ultra-fine particles rather than ordinary solder balls.

摘要翻译： 半导体器件可以通过使用复合金属超细颗粒的凸块技术来安装。 每个颗粒包括基本上是金属组分的芯部分，其中与芯部分化学结合的涂层，涂层是有机物质。 可以使用两种碰撞技术中的一种来安装半导体器件，即从复合金属超细颗粒形成凸块下金属，并在凸块上金属上形成普通焊球; 或使用包含复合金属超细颗粒而不是普通焊球的糊球。

公开(公告)号：US06368493B1

公开(公告)日：2002-04-09

申请号：US09645405

申请日：2000-08-25

申请人： Yuzo Mori ,  Mitsuhiko Shirakashi ,  Takayuki Saito ,  Yasushi Toma ,  Akira Fukunaga ,  Itsuki Kobata

发明人： Yuzo Mori ,  Mitsuhiko Shirakashi ,  Takayuki Saito ,  Yasushi Toma ,  Akira Fukunaga ,  Itsuki Kobata

IPC分类号： B23H300

CPC分类号： C25F3/00 ,  B23H3/08

摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

公开(公告)号：US5788828A

公开(公告)日：1998-08-04

申请号：US757667

申请日：1996-11-29

申请人： Masato Nakatsu ,  Syu Nakanishi ,  Akira Fukunaga ,  Takayuki Saito ,  Kanroku Chounan

发明人： Masato Nakatsu ,  Syu Nakanishi ,  Akira Fukunaga ,  Takayuki Saito ,  Kanroku Chounan

IPC分类号： G01N1/10 ,  G01M3/16 ,  G01M3/18 ,  G01N27/06 ,  G01N33/18 ,  B01D35/06

CPC分类号： G01N33/182 ,  G01M3/16 ,  G01M3/188 ,  G01N27/06

摘要： An improved apparatus for detecting anions in water includes an electrical continuous ion-exchange unit comprising an anode compartment and a cathode compartment which are spaced apart by an alkali removing compartment packed with a cation exchanger defined by two cation-exchange membranes. Each of the said anode compartment, cathode compartment and alkali removing compartment is provided with a passageway through which water is admitted and a passageway through which the treated water is discharged. The passageway through which the treated water is discharged from the alkali removing compartment is equipped with an instrument for measuring the specific resistance or electrical conductivity of the treated water. The alkali removing compartment may be replaced by one or more cation-exchange membranes or a treatment compartment defined by two or more cation-exchange membranes, and the passageway through which the treated water is discharged from the anode compartment is equipped with an instrument for measuring the specific resistance or electrical conductivity of the treated water. The apparatus does not require replacement of ion-exchange resins, achieves correct measurements with a simple operation and yet functions as an inexpensive salt detector.

摘要翻译： 用于检测水中阴离子的改进装置包括电连续离子交换单元，其包括阳极室和阴极室，所述阳极室和阴极室由被两个阳离子交换膜限定的阳离子交换器填充的碱性除去室隔开。 所述阳极室，阴极室和碱性除去室中的每一个都设置有通道，水通过该通道和经处理的水排出的通道。 经过处理的水从碱性除去室排出的通道装备有用于测量处理过的水的比电阻或电导率的仪器。 碱去除室可以由一个或多个阳离子交换膜或由两个或更多个阳离子交换膜限定的处理室代替，并且经处理的水从阳极室排出的通道装备有用于测量的仪器 处理水的比电阻或电导率。 该装置不需要更换离子交换树脂，通过简单的操作实现正确的测量，并且作为便宜的盐检测器起作用。

公开(公告)号：US5169419A

公开(公告)日：1992-12-08

申请号：US813693

申请日：1991-12-07

申请人： Yoichi Mori ,  Akira Fukunaga

发明人： Yoichi Mori ,  Akira Fukunaga

IPC分类号： B01D53/04 ,  B01D53/30 ,  B01D53/34 ,  B01D53/81

CPC分类号： B01D53/0454 ,  B01D53/30

摘要： A gas adsorber which is capable of reliably removing harmful gases discharged from processes in the semiconductor industry, the ceramic industry, etc. The gas adsorber has an integral structure comprising a main treating section having an exhaust gas inlet port and packed with an adsorbent, an auxiliary treating section having a treated gas outlet port and packed with an adsorbent, and a space section provided in between the main and auxiliary treating sections, the space section having a gas outlet port and a gas return port, which provide communication between the space section and a gas sensor. With this arrangement, the adsorption conditions in the main treating section can be perceived accurately.

公开(公告)号：US20090197510A1

公开(公告)日：2009-08-06

申请号：US12068097

申请日：2008-02-01

申请人： Shohei Shima ,  Akira Fukunaga ,  Shintaro Kamioka

发明人： Shohei Shima ,  Akira Fukunaga ,  Shintaro Kamioka

IPC分类号： B24B29/00 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B57/00

摘要： This polishing method and polishing apparatus include: a polishing characteristics measurement step in which electrochemical characteristics of a slurry in relation to a material to be polished are measured; and a preparation step in which the slurry is prepared based on the measured electrochemical characteristics, wherein, in the polishing characteristics measurement step, a slurry is supplied from a slurry supply apparatus 202, and using a sample polishing pad that is formed from the same material as the polishing pad and a sample material to be polished that is formed from the same material as the material to be polished, the electrochemical characteristics are measured both when the sample material to be polished is being polished by the sample polishing pad and when the sample material to be polished is not being polished by the sample polishing pad.

摘要翻译： 该抛光方法和抛光装置包括：抛光特性测量步骤，其中测量浆料相对于待抛光材料的电化学特性; 以及制备步骤，其中基于测量的电化学特性制备浆料，其中在抛光特性测量步骤中，从浆料供应装置202提供浆料，并使用由相同材料形成的样品抛光垫 作为抛光垫和由与被抛光材料相同的材料形成的待抛光样品材料，当待抛光样品被样品抛光垫抛光时，测量电化学特性，当样品 要抛光的材料不被样品抛光垫抛光。

公开(公告)号：US20080067679A1

公开(公告)日：2008-03-20

申请号：US11663351

申请日：2005-09-22

申请人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

发明人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

IPC分类号： H01L23/52 ,  H01B1/02 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  C23C18/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.

摘要翻译： 半导体器件具有被合金膜保护的互连，所述合金膜具有为了产生防止在衬底的整个表面上更均匀地形成的氧，铜等的扩散所必需的最小厚度，而对衬底的互连图案的依赖性较小 。 半导体器件包括通过将互连材料填充到形成在基板上的电绝缘体中的互连凹槽中形成的嵌入式互连，以及包含1至9原子％的钨或钼和3至12原子％的磷的合金膜， 硼，通过在至少部分嵌入式互连件上的无电镀形成。

公开(公告)号：US20070228569A1

公开(公告)日：2007-10-04

申请号：US11783186

申请日：2007-04-06

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga

IPC分类号： H01R43/00 ,  H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/76819 ,  H01L21/7685 ,  Y10S438/976 ,  Y10T29/41

摘要： The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.

公开(公告)号：US20070205112A1

公开(公告)日：2007-09-06

申请号：US11797480

申请日：2007-05-03

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  B24B53/001 ,  B24B53/017 ,  C09G1/02 ,  C25F3/02 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/7684

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US07217653B2

公开(公告)日：2007-05-15

申请号：US10896014

申请日：2004-07-22

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga

IPC分类号： H01L21/4763

CPC分类号： H01L21/76849 ,  H01L21/76819 ,  H01L21/7685 ,  Y10S438/976 ,  Y10T29/41

摘要： The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.

摘要翻译： 本发明提供一种互连形成方法和互连形成装置，其能够最小化蚀刻中的处理精度的降低，使在多层互连的制造中形成互连凹槽的光曝光处理最小化，提高电镀迁移电阻 互连，而不损害互连的电性能，并且增强器件的可靠性。 互连形成方法包括在形成在基板的表面中的绝缘膜中提供互连凹槽; 在互连凹槽中嵌入互连材料，同时在绝缘膜的表面上形成互连材料的金属膜; 除去互连凹部中的金属材料以外的多余的金属材料，使基板表面变平，从而形成互连件; 在互连的暴露表面上选择性地形成导电材料的第一保护膜; 在具有如此形成的第一保护膜的基板的表面上形成第二保护膜; 在具有如此形成的第二保护膜的基板的表面上形成层间绝缘膜; 并平坦化层间绝缘膜的表面。