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73 条记录 (耗时 0.017 秒)

    Method of manufacturing semiconductor device
    21.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06057190A

    公开(公告)日：2000-05-02

    申请号：US880989

    申请日：1997-06-23

    申请人： Naoyuki Yoshida

    发明人： Naoyuki Yoshida

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  H01L27/10817

    摘要： In a semiconductor device manufacturing method, a first insulating film is formed on a semiconductor substrate. A contact hole is selectively formed in the first insulating film. A first conductive film is formed on the first insulating film to fill the interior of the contact hole. A second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film. The second insulating film and the second conductive film are patterned to leave the second insulating film and the second conductive film only immediately above the contact hole. A third conductive film is formed on the surfaces of the first conductive film, the second insulating film, and the second conductive film. The third conductive film on the first and second conductive films is removed to form a cylindrical lower electrode consisting of the third conductive film left only on the side surfaces of the second insulating film and the second conductive film. An exposed portion of the first conductive film and the second conductive film are removed to expose the first and second insulating films. The second insulating film is removed to expose the first conductive film. A third insulating film and a fourth insulating film serving as an upper electrode are formed.

    摘要翻译： 在半导体器件制造方法中，在半导体衬底上形成第一绝缘膜。 在第一绝缘膜中选择性地形成接触孔。 在第一绝缘膜上形成第一导电膜以填充接触孔的内部。 在第一导电膜上形成第二绝缘膜。 在第二绝缘膜上形成第二导电膜。 图案化第二绝缘膜和第二导电膜，使第二绝缘膜和第二导电膜仅在接触孔的正上方。 在第一导电膜，第二绝缘膜和第二导电膜的表面上形成第三导电膜。 除去第一导电膜和第二导电膜上的第三导电膜，以形成由仅在第二绝缘膜和第二导电膜的侧表面上留下的第三导电膜构成的圆柱形下电极。 去除第一导电膜和第二导电膜的暴露部分以露出第一和第二绝缘膜。 去除第二绝缘膜以露出第一导电膜。 形成作为上电极的第三绝缘膜和第四绝缘膜。

    Process for producing optically active 3-aminobutanoic acid and the ester intermediates
    23.
    发明授权
    Process for producing optically active 3-aminobutanoic acid and the ester intermediates 失效
    光学活性3-氨基丁酸和酯中间体的制备方法

    公开(公告)号：US5518903A

    公开(公告)日：1996-05-21

    申请号：US289031

    申请日：1994-08-11

    申请人： Naoyuki Yoshida ,  Teruyo Sugiura ,  Yasuyuki Koizumi

    发明人： Naoyuki Yoshida ,  Teruyo Sugiura ,  Yasuyuki Koizumi

    IPC分类号： C12P13/04 ,  C12P41/00 ,  C12R1/01 ,  C12R1/38 ,  C12N9/14 ,  C12N9/16

    CPC分类号： C12P41/005 ,  C12P13/04

    摘要： The present invention provides a process for producing optically active 3-aminobutanoic acid characterized in that it comprises an asymmetrically hydrolyzing racemic ester of 3-substituted aminobutanoic acid in the presence of a hydrolase, obtaining an optically active ester of 3-substituted aminobutanoic acid and an optically active 3-substituted aminobutanoic acid of an enantiomer of the ester, and treating the above ester represented by the formula (II): ##STR1## to remove the protecting group. In addition, the new ester intermediates represented by the above formula (II) are provided.

    摘要翻译： 本发明提供了一种光学活性3-氨基丁酸的制备方法，其特征在于，在水解酶存在下，其包含不对称水解的3-取代氨基丁酸的外消旋酯，得到3-取代氨基丁酸的光学活性酯和 光学活性的3-取代的氨基丁酸的酯的对映异构体，并处理由式（II）表示的上述酯：除去保护基。 此外，提供由上述式（II）表示的新的酯中间体。

    Process for selectively producing optically active 1-derivatized-2-diol using lipase CES and triglyceride
    24.
    发明授权
    Process for selectively producing optically active 1-derivatized-2-diol using lipase CES and triglyceride 失效
    使用脂肪酶CES和甘油三酸酯选择性地制备光学活性的1-衍生化的2-二醇的方法

    公开(公告)号：US5391494A

    公开(公告)日：1995-02-21

    申请号：US104408

    申请日：1993-08-10

    申请人： Kazutoshi Miyazawa ,  Naoyuki Yoshida

    发明人： Kazutoshi Miyazawa ,  Naoyuki Yoshida

    IPC分类号： C07D309/12 ,  C12P17/06 ,  C12P41/00

    CPC分类号： C12P41/004 ,  C07D309/12 ,  C12P17/06 ,  Y02P20/55 ,  Y10S435/874

    摘要： This invention provides optically active compounds which are starting materials of physiologically active substances, functional materials and the like, and the compounds are represented by the general formula (I): ##STR1## wherein R.sup.1 is hydrogen or alkanoyl of 2-20 carbon atoms, R.sup.2 is alkyl of 1-40 carbon atoms, alkenyl of 1-40 carbon atoms, or alkynyl of 1-40 carbon atoms in which the alkyl, alkenyl or alkynyl moiety is possible to have phenyl, cyclohexyl, pyridyl, pyrimidyl, pyridadyl, pyrazyl, dioxyl, bicyclooctyl, or a substituent thereof, or halogen, cyanogen, oxygen, nitrogen, silicon or sulfur, and X is a protective group removable by a chemical method of organic synthesis and C* is an asymmetric carbon.

    摘要翻译： 本发明提供作为生理活性物质，功能材料等的原料的光学活性化合物，该化合物由通式（I）表示：其中R 1为氢或2-20的烷酰基 碳原子，R2是1-40个碳原子的烷基，1-40个碳原子的烯基或1-40个碳原子的炔基，其中烷基，烯基或炔基部分可能具有苯基，环己基，吡啶基，嘧啶基， 吡啶基，吡嗪基，二恶基，双环辛基或其取代基，或卤素，氰，氧，氮，硅或硫，X是通过有机合成的化学方法除去的保护基，C *是不对称碳。

    Semiconductor memory device wherein gate electrode thickness is greater in the memory cells than in the peripheral cells
    25.
    发明授权
    Semiconductor memory device wherein gate electrode thickness is greater in the memory cells than in the peripheral cells 失效
    半导体存储器件，其中存储器单元中的栅电极厚度大于外围单元中的栅电极厚度

    公开(公告)号：US5256892A

    公开(公告)日：1993-10-26

    申请号：US722847

    申请日：1991-06-28

    申请人： Naoyuki Yoshida

    发明人： Naoyuki Yoshida

    IPC分类号： H01L27/105 ,  H01L27/108 ,  H01L29/68 ,  H01L29/78 ,  H01L29/92

    CPC分类号： H01L27/10808 ,  H01L27/105

    摘要： An attempt was made to increase the film thickness of at least a portion of word lines over which a storage node electrode of the capacitor for storing charges extends in a DRAM having word lines, bit lines and memory cells comprising one transistor and one stacked capacitor for charge storage. This increases the surface area of the storage node electrode. This also increases the opposing areas of the storage node electrode and the cell plate electrode of the capacitor for storing charges. This invention realizes the increase in the surface area of the storage node electrode without imposing additional burden on processibility.

    Method of sample valuation based on the measurement of photothermal displacement
    29.
    发明授权
    Method of sample valuation based on the measurement of photothermal displacement 失效
    基于光热位移测量的样本估值方法

    公开(公告)号：US5619326A

    公开(公告)日：1997-04-08

    申请号：US409670

    申请日：1995-03-24

    申请人： Hiroyuki Takamatsu ,  Tsutomu Morimoto ,  Shingo Sumie ,  Naoyuki Yoshida

    发明人： Hiroyuki Takamatsu ,  Tsutomu Morimoto ,  Shingo Sumie ,  Naoyuki Yoshida

    IPC分类号： G01N29/00 ,  G01N21/00 ,  G01N21/17 ,  G01N21/45 ,  G01B9/02

    CPC分类号： G01N21/171

    摘要： A sample evaluation method based on the measurement of photothermal displacement in which two exciting light beams and two measuring light beams are produced by a laser source, the exciting beams are rendered intensity modulation in opposite phase relationship by an acoustic-optic modulator and illuminated to different positions of a sample, the measuring beams are provided with different oscillation frequencies by acoustic-optic modulators and illuminated to the irradiation positions of the exciting beams correspondingly, the reflected lights of measuring beams from the sample are merged so as to interfere with each other, and the sample is evaluated based on the phase of the interference light. The method is capable of measuring the photothermal displacement accurately and stably without implementing intricate signal processings.

    摘要翻译： 基于通过激光源产生两个激发光束和两个测量光束的光热位移测量的样本评估方法，激发光束通过声光调制器呈相反相位关系的强度调制，并被照射到不同的 样品的位置，测量光束通过声光调制器被提供有不同的振荡频率，并相应地照射到激发光束的照射位置，来自样品的测量光束的反射光被合并以相互干扰， 并且基于干涉光的相位来评估样品。 该方法能够精确稳定地测量光热位移，而不需要执行复杂的信号处理。