公开(公告)号：US4759951A

公开(公告)日：1988-07-26

申请号：US910875

申请日：1986-09-23

申请人： Masataka Itoh ,  Masaya Nagata ,  Shuhei Tsuchimoto ,  Atsushi Yoshinouchi ,  Hiroshi Wada ,  Katsushi Okibayashi ,  Soji Ohhara

发明人： Masataka Itoh ,  Masaya Nagata ,  Shuhei Tsuchimoto ,  Atsushi Yoshinouchi ,  Hiroshi Wada ,  Katsushi Okibayashi ,  Soji Ohhara

IPC分类号： H01L31/09 ,  H01L31/18 ,  B05D5/12 ,  H01L31/00

CPC分类号： H01L31/1832 ,  H01L31/09 ,  H01L31/1828 ,  Y02E10/543

摘要： A process for producing a photoelectric conversion film comprising heat-treating a coating (A) of a photoconductive material composed chiefly of at least one of CdSe, CdS, CdTe, CdS.sub.x Se.sub.1-x and CdS.sub.x Te.sub.1-x wherein x is a real number of less than 1, opposite from a coating (B) in proximity thereto, the coating (B) being made of a material composed chiefly of CdS and a Cd halide.

摘要翻译： 一种制造光电转换膜的方法，包括热处理主要由CdSe，CdS，CdTe，CdSxSe1-x和CdSxTe1-x中的至少一种组成的光电导材料的涂层（A），其中x是小于 如图1所示，与其附近的涂层（B）相反，涂层（B）由主要由CdS和Cd卤化物组成的材料制成。

公开(公告)号：US07645677B2

公开(公告)日：2010-01-12

申请号：US10598961

申请日：2004-05-28

申请人： Tomoyuki Watanabe ,  Atsushi Yoshinouchi

发明人： Tomoyuki Watanabe ,  Atsushi Yoshinouchi

IPC分类号： H01L21/76

CPC分类号： H01L21/02129 ,  H01L21/02131 ,  H01L21/3165 ,  H01L21/76232 ,  H01L21/76801 ,  H01L21/76837 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing semiconductor device according to the present invention comprises a first film forming step of forming, on a concave and convex portion formed by an element on a semiconductor substrate, an oxidation preventive layer which prevents permeation of moisture into the element; a second film forming step of forming, on this oxidation preventive layer, an expansion layer which can be oxidized and expanded by a heat treatment in an oxidation atmosphere; a third film forming step of forming, on this expansion layer, an insulating film which can be fluidized by the heat treatment in the oxidation atmosphere; and an expansion step of subjecting, to the heat treatment in the oxidation atmosphere, the semiconductor substrate on which the oxidation preventive layer, the expansion layer and the insulating film have been formed, to fluidize the insulating film and to oxidize and expand the expansion layer, thereby eliminating bubbles generated in the insulating film.

摘要翻译： 根据本发明的制造半导体器件的方法包括：第一膜形成步骤，在由半导体衬底上的元件形成的凹凸部上形成防止水分渗透到元件中的防氧化层; 在该氧化防止层上形成能够在氧化气氛中进行热处理而被氧化膨胀的膨胀层的第二成膜工序; 在该膨胀层上形成能够在氧化气氛中通过热处理而流化的绝缘膜的第三成膜工序; 以及在氧化气氛中对其上形成有氧化层，膨胀层和绝缘膜的半导体衬底进行热处理以使绝缘膜流化并使膨胀层氧化和膨胀的膨胀步骤 从而消除在绝缘膜中产生的气泡。

公开(公告)号：US06599790B1

公开(公告)日：2003-07-29

申请号：US08799202

申请日：1997-02-13

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

IPC分类号： H01L2100

CPC分类号： G10L17/22 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H04M3/2281 ,  H04M3/229 ,  H04M3/382 ,  H04M3/385 ,  H04M2201/40 ,  H04Q3/0016

摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

公开(公告)号：US06455359B1

公开(公告)日：2002-09-24

申请号：US09298517

申请日：1999-04-22

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

IPC分类号： H01L2100

CPC分类号： H01L27/1285 ,  H01L27/1214 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

摘要翻译： 一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。 还要求保护的是实现上述方法的激光照射装置。

公开(公告)号：US5937304A

公开(公告)日：1999-08-10

申请号：US665978

申请日：1996-06-19

申请人： Atsushi Yoshinouchi ,  Takeshi Hosoda ,  Tomohiko Yamamoto

发明人： Atsushi Yoshinouchi ,  Takeshi Hosoda ,  Tomohiko Yamamoto

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/223 ,  H01L21/336 ,  H01L29/786 ,  H01L21/26

CPC分类号： H01L29/66757 ,  H01L21/2236

摘要： A method for fabricating a semiconductor device includes the steps of forming a semiconductor film containing silicon, implanting impurity elements to the semiconductor film, performing a dehydrogenation treatment to the semiconductor film, and activating the impurity elements in the dehydrogenated semiconductor film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：形成含硅的半导体膜，向半导体膜注入杂质元素，对半导体膜进行脱氢处理，以及激活脱氢半导体膜中的杂质元素。

公开(公告)号：US5767531A

公开(公告)日：1998-06-16

申请号：US946408

申请日：1997-10-07

申请人： Atsushi Yoshinouchi

发明人： Atsushi Yoshinouchi

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04 ,  H01L31/0368

CPC分类号： H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  G02F1/1368

摘要： A thin-film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film formed on the semiconductor layer, and a gate electrode formed on the gate insulating film, wherein a portion of the gate insulating film disposed above a portion of the semiconductor layer sandwiched by the source region and the drain region includes of a first portion with a first thickness and a second portion with a second thickness which is different from the first thickness.

摘要翻译： 薄膜晶体管包括具有源极区和漏极区的半导体层，形成在半导体层上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜的位于 由源极区域和漏极区域夹持的半导体层的部分包括具有第一厚度的第一部分和具有与第一厚度不同的第二厚度的第二部分。

公开(公告)号：US5504020A

公开(公告)日：1996-04-02

申请号：US307068

申请日：1994-09-16

申请人： Shigeru Aomori ,  Atsushi Yoshinouchi ,  Keiji Tarui ,  Tatsuo Morita

发明人： Shigeru Aomori ,  Atsushi Yoshinouchi ,  Keiji Tarui ,  Tatsuo Morita

IPC分类号： H01L21/266 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78675 ,  H01L21/2236 ,  H01L21/3003 ,  H01L27/1214 ,  H01L29/66757 ,  H01J2237/31701

摘要： A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1.times.10.sup.19 ions/cm.sup.3 to 1.times.10.sup.20 ions/cm.sup.3.

摘要翻译： 一种制造薄膜晶体管的方法包括以下步骤：在绝缘基板上形成半导体层和栅电极，其间插有栅绝缘膜; 以及通过使用用于形成栅极的栅电极和抗蚀剂掩模中的至少一个来加速元素周期表中第III族元素或第V族元素的氢离子和离子，将杂质元素注入到半导体层的表面中 电极作为掩模，以便同时进行源区和漏区的形成和沟道区的氢化，其中半导体层的沟道区中的氢离子的浓度在1×1019离子/ cm 3至1×1020离子的范围内 / cm3。

公开(公告)号：US5393986A

公开(公告)日：1995-02-28

申请号：US942663

申请日：1992-09-09

申请人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto

发明人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto

IPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/05 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24507 ,  H01J2237/24585

摘要： An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.

摘要翻译： 具有用于产生离子的等离子体源的离子注入装置，用于加速产生的离子的离子加速器以及设置在加速离子照射的位置上的基板保持器，其中通过电磁测量所需种类的离子的电流密度 离子能量分析仪具有电场和磁场，从而控制离子的剂量。

公开(公告)号：US4939591A

公开(公告)日：1990-07-03

申请号：US209882

申请日：1988-06-22

申请人： Masataka Itoh ,  Atsushi Yoshinouchi ,  Satoshi Nishigaki ,  Takashi Nukii ,  Shuhei Tsuchimoto

发明人： Masataka Itoh ,  Atsushi Yoshinouchi ,  Satoshi Nishigaki ,  Takashi Nukii ,  Shuhei Tsuchimoto

IPC分类号： H04N1/028 ,  H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0312 ,  H04N1/0311 ,  H04N1/0316

摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript, a bundle of optical fibers being buried in the substrate; and wiring electrodes that are disposed on the top surface of the substrate corresponding to the light-emitting face of the bundle of optical fibers and that are disposed on the light-receiving surfaces of the photodetectors, wherein the photodetectors are disposed in such a manner that the light-receiving surfaces of the photodetectors face the light-emitting face of the bundle of optical fibers, the wiring electrodes disposed on the photodetectors being electrically bonded to the wiring electrodes disposed on the substrate.