公开(公告)号：US06566654B1

公开(公告)日：2003-05-20

申请号：US09697773

申请日：2000-10-27

申请人： Ryuichi Funatsu ,  Shigeto Isakozawa ,  Hidemi Koike

发明人： Ryuichi Funatsu ,  Shigeto Isakozawa ,  Hidemi Koike

IPC分类号： G03F900

CPC分类号： H01J37/28 ,  H01J2237/2817 ,  H01J2237/3174

摘要： The present invention is intended to detect defects in a circuit pattern formed on a semiconductor wafer by a circuit pattern forming process, to facilitates the extraction and observation of the defects, to improve the accuracy of analysis of the causes of the defects, and to determine the causes of the defects and to take measures to eliminate the causes of the defects in a greatly reduced time after the formation of the defects. A method of inspecting a circuit pattern for defects and analyzing defects, comprising locating a defect in a circuit pattern formed on a wafer by using an electron beam, specifying a chip having the defect on the basis of position data on the defect, cutting out the chip from the semiconductor wafer, thinning a portion of the chip to form a thin portion, and observing the thin portion of the chip under a transmission electron microscope to determine the causes of the defect.

摘要翻译： 本发明旨在通过电路图案形成处理来检测在半导体晶片上形成的电路图案中的缺陷，以便于提取和观察缺陷，提高对缺陷原因的分析准确性，并确定 造成缺陷的原因，并在形成缺陷后大幅度缩短的时间内采取措施消除缺陷的原因。 一种用于检查缺陷的电路图案和分析缺陷的方法，包括通过使用电子束将形成在晶片上的电路图案中的缺陷定位在缺陷上，根据缺陷的位置数据指定具有缺陷的芯片， 从半导体晶片切片，使芯片的一部分变薄以形成薄的部分，并且在透射电子显微镜下观察芯片的薄部分以确定缺陷的原因。

公开(公告)号：US06476387B1

公开(公告)日：2002-11-05

申请号：US09311268

申请日：1999-05-14

申请人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Yuichi Hamamura ,  Michinobu Mizumura ,  Yasuhiro Koizumi ,  Hidemi Koike

发明人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Yuichi Hamamura ,  Michinobu Mizumura ,  Yasuhiro Koizumi ,  Hidemi Koike

IPC分类号： H01J3730

CPC分类号： H01J37/28 ,  H01J2237/0047 ,  H01J2237/2482

摘要： In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

摘要翻译： 在通过在至少部分地被绝缘体膜覆盖的样品上照射带电束的样品的表面的方法中，紫外光可能作为脉冲照射在样品（衬底）上，从而将绝缘体 由于光电导效应而成为导电材料，从而将样品（基板）的表面转变为导电材料，使得带电粒子从接地部分接地，以防止带电粒子由于带电粒子而被斥力 被照射的带电光束积聚在形成在样品（基板）表面上的绝缘体中。

公开(公告)号：US5216253A

公开(公告)日：1993-06-01

申请号：US780198

申请日：1991-10-22

申请人： Hidemi Koike

发明人： Hidemi Koike

IPC分类号： C23C14/48 ,  H01J37/05 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/30472

摘要： In an ion implantation apparatus, a first slit for limiting an ion beam width is provided between an ion source and a mass separation electromagnet. An accelerator is provided behind the mass separation electromagnet. A second slit for separating the ion beam is provided between a deflector provided behind the accelerator and a wafer. The slit widths of the first and second slits are controlled by a controller which monitors an ion source acceleration voltage, a magnetic field intensity of the mass separation electromagnet, an accelerator voltage, and a magnetic field intensity of the deflector, and control the slit widths of the first and second slits based on the monitored information.

摘要翻译： 在离子注入装置中，在离子源和质量分离电磁体之间设置用于限制离子束宽度的第一狭缝。 在质量分离电磁体之后设置加速器。 用于分离离子束的第二狭缝设置在设置在加速器后面的偏转器和晶片之间。 第一和第二狭缝的狭缝宽度由监视离子源加速电压，质量分离电磁体的磁场强度，加速器电压和偏转器的磁场强度的控制器控制，并且控制狭缝宽度 的第一和第二狭缝基于所监视的信息。

公开(公告)号：US08156852B2

公开(公告)日：2012-04-17

申请号：US11036047

申请日：2005-01-18

申请人： Takeya Shibata ,  Yuzuru Sekiguchi ,  Michiharu Nishijima ,  Tsutomu Tsuji ,  Hidemi Koike ,  Yutaka Saegusa ,  Kousuke Watanabe ,  Takayuki Tanigawa ,  Toshihiro Houhara ,  Shinichi Mukasa ,  Kenji Yamamoto

发明人： Takeya Shibata ,  Yuzuru Sekiguchi ,  Michiharu Nishijima ,  Tsutomu Tsuji ,  Hidemi Koike ,  Yutaka Saegusa ,  Kousuke Watanabe ,  Takayuki Tanigawa ,  Toshihiro Houhara ,  Shinichi Mukasa ,  Kenji Yamamoto

IPC分类号： B26D5/20 ,  B26F1/38

CPC分类号： B26F1/3813 ,  B26D5/00 ,  B26D7/015 ,  B26D7/2628 ,  B26D2007/0087 ,  B26D2007/2678 ,  Y10T83/0348 ,  Y10T83/162 ,  Y10T83/538

摘要： A cut target medium driving type cutting plotter, where a cut target medium to be cut is driven in a first direction and a cutting unit is driven in a second direction perpendicular to the first direction, thereby moving the cutting unit in a two-dimensional direction relative to the cut target medium to make the cutting unit to be selectively brought into press contact with and separated from the cut target medium to cut the cut target medium in a desired shape, the cut target medium driving type cutting plotter includes a cut target medium supporting sheet to removably support the cut target medium on a surface opposite to the cutting unit. Preferably, the cut target medium is driven in the first direction together with the cut target medium supporting sheet, and the cut target medium supported on the cut target medium supporting sheet is cut by the cutting unit.

摘要翻译： 一种切割目标介质驱动型切割机，其中待切割的切割目标介质沿第一方向被驱动，并且切割单元沿与第一方向垂直的第二方向被驱动，从而沿着二维方向移动切割单元 相对于切割目标介质，切割单元选择性地与切割的目标介质压接并分离，以将切割的目标介质切割成期望的形状，切割目标介质驱动型切割机包括切割目标介质 支撑片可拆卸地支撑与切割单元相对的表面上的切割目标介质。 优选地，切割目标介质与切割的目标介质支撑片材一起沿第一方向被驱动，并且被切割的目标介质支撑片材上支撑的切割目标介质被切割单元切割。

公开(公告)号：US07897936B2

公开(公告)日：2011-03-01

申请号：US11822386

申请日：2007-07-05

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21K1/00

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US07888639B2

公开(公告)日：2011-02-15

申请号：US11980654

申请日：2007-10-31

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G01N23/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US07205554B2

公开(公告)日：2007-04-17

申请号：US11127213

申请日：2005-05-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： H01J37/256 ,  G21N23/225

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US06970004B2

公开(公告)日：2005-11-29

申请号：US10803932

申请日：2004-03-19

申请人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

发明人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

IPC分类号： G01R31/265 ,  G01R31/28 ,  G01R31/302 ,  G01R31/303 ,  G01R31/305 ,  G01R31/307 ,  G01R31/311 ,  H01J37/20 ,  H01J37/28 ,  G01R31/00 ,  G01R31/26 ,  H01L27/00

CPC分类号： G01R31/311 ,  G01R31/2851 ,  G01R31/303

摘要： Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

摘要翻译： 可以在大芯片（20〜25mm的正方形）内大量排列的TEG（每个为1〜2.5mm的方形）内的亚微米尺寸的布线图案中的断路缺陷，短路缺陷等相对于 所有的TEG，具有良好的可操作性，高可靠性和高效率。 用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。 探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

公开(公告)号：US06927391B2

公开(公告)日：2005-08-09

申请号：US10878528

申请日：2004-06-29

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G01N1/32 ,  G01N1/28 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/16 ,  G01Q30/20 ,  H01J37/20 ,  H01J37/256 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66 ,  H04L29/06 ,  H04L29/08

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US06627889B2

公开(公告)日：2003-09-30

申请号：US10152000

申请日：2002-05-22

申请人： Isao Ochiai ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Muneyuki Fukuda ,  Mitsugu Sato ,  Tohru Ishitani

发明人： Isao Ochiai ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Muneyuki Fukuda ,  Mitsugu Sato ,  Tohru Ishitani

IPC分类号： G01N2300

CPC分类号： H01J37/256 ,  H01J2237/2561 ,  H01J2237/31745

摘要： An apparatus and method for observing a sample that is capable of making observations by irradiating an electron beam to a sample in the form of a thin film, and making elemental analysis accurately and with increased resolution while reducing background noise. A particular portion of the sample is observed by the electron beam by disposing a light element piece having a hole provided immediately behind the thin film sample. According to the present invention, it is possible to reduce the x-rays generated from portions other than the sample and electron beam incident on the sample after being scattered to portions other than the sample when observing the thin film sample by irradiating the electron beam. It is therefore possible to make secondary electron observation and elemental analysis with increased accuracy and sensitivity. Thus, an apparatus and a method for observing samples is provided that allows for the accurate and high-resolution internal observation of LSI devices.

摘要翻译： 一种用于观察能够通过以薄膜形式向样品照射电子束而进行观察的样品的装置和方法，并且在降低背景噪声的同时精确地并且以更高的分辨率进行元素分析。 通过设置具有设置在薄膜样品后面的孔的光元件片，通过电子束观察样品的特定部分。 根据本发明，通过照射电子束来观察薄膜样品时，可以减少在样品和入射到样品上的部分之后产生的X射线在散射到除了样品之外的部分之外的部分。 因此，可以以更高的精度和灵敏度进行二次电子观察和元素分析。 因此，提供了用于观察样本的装置和方法，其允许LSI器件的精确和高分辨率的内部观察。