公开(公告)号：US09799699B2

公开(公告)日：2017-10-24

申请号：US14494960

申请日：2014-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

公开(公告)号：US09484370B2

公开(公告)日：2016-11-01

申请号：US14524791

申请日：2014-10-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Kevin Ka Kei Leung ,  Dajiang Yang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/378

Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.

Abstract translation: 像素单元包括设置在半导体材料中的光电二极管，以响应于被引导到光电二极管的入射光而累积图像电荷。 设置在半导体材料中的全局快门栅极晶体管，并耦合到光电二极管以选择性地从光电二极管中消耗图像电荷。 存储晶体管设置在半导体材料中以存储图像电荷。 光学隔离结构设置在靠近存储晶体管的半导体材料中，以将存储晶体管的侧壁与存储晶体管外部的半导体材料中的杂散光和杂散电荷隔离。 光隔离结构用钨填充。

公开(公告)号：US20160118438A1

公开(公告)日：2016-04-28

申请号：US14524791

申请日：2014-10-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Kevin Ka Kei Leung ,  Dajiang Yang

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/378

Abstract: A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.

Abstract translation: 像素单元包括设置在半导体材料中的光电二极管，以响应于被引导到光电二极管的入射光而累积图像电荷。 设置在半导体材料中的全局快门栅极晶体管，并耦合到光电二极管以选择性地从光电二极管中消耗图像电荷。 存储晶体管设置在半导体材料中以存储图像电荷。 光学隔离结构设置在靠近存储晶体管的半导体材料中，以将存储晶体管的侧壁与存储晶体管外部的半导体材料中的杂散光和杂散电荷隔离。 光隔离结构用钨填充。

公开(公告)号：US09287308B2

公开(公告)日：2016-03-15

申请号：US13858754

申请日：2013-04-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

公开(公告)号：US20150295007A1

公开(公告)日：2015-10-15

申请号：US14250192

申请日：2014-04-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

IPC: H01L27/146 ,  H01L31/167

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

公开(公告)号：US20140319639A1

公开(公告)日：2014-10-30

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US10334191B1

公开(公告)日：2019-06-25

申请号：US15910883

申请日：2018-03-02

Applicant: OmniVision Technologies, Inc.

Inventor： Dajiang Yang ,  Zhiyong Zhan ,  Chen-wei Lu ,  Duli Mao ,  Xin Wang ,  Keiji Mabuchi

IPC: H04N5/335 ,  H04N5/355 ,  H01L27/146 ,  H04N5/378

Abstract: A pixel cell includes a second photodiode laterally surrounding a first photodiode in semiconductor material. The first and second photodiodes are adapted to photogenerate image charge in response to incident light. A floating diffusion is disposed in the semiconductor material proximate to an outer perimeter of the second photodiode. A first transfer gate is disposed proximate to the semiconductor material over a first channel region between the first and second photodiodes. The first transfer gate is coupled to transfer the image charge from the first photodiode to the second photodiode. A second transfer gate is disposed proximate to the semiconductor material over a second channel region between the second photodiode and the floating diffusion. The second transfer gate is coupled to transfer the image charge from the second photodiode to the floating diffusion.

公开(公告)号：US20190013348A1

公开(公告)日：2019-01-10

申请号：US16130309

申请日：2018-09-13

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14629

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US09881955B2

公开(公告)日：2018-01-30

申请号：US14882832

申请日：2015-10-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1461 ,  H01L27/14627 ,  H01L27/1463

Abstract: A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.