公开(公告)号：US4737828A

公开(公告)日：1988-04-12

申请号：US840635

申请日：1986-03-17

申请人： Dale M. Brown

发明人： Dale M. Brown

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/78 ,  B44C1/22 ,  C23F1/02 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L29/6659 ,  H01L21/2815 ,  H01L29/41783 ,  H01L29/66659 ,  H01L29/7834 ,  Y10S257/90

摘要： An edge defining method is employed in the fabrication of narrow electrical patterns for VLSI circuits. The method is particularly employable in the formation of inlay MOSFET transistors having extremely narrow gate widths. The method is also particularly amenable to the fabrication of both symmetrical and non-symmetrical MOSFET devices on the same VLSI circuit chip. The inlay transistor structure is also employed to fabricate NOR and NAND type "ladder" networks and to join vertically and horizontally adjacent semiconductor devices.

摘要翻译： 在制造用于VLSI电路的窄电气图案中采用边缘限定方法。 该方法特别可用于形成具有极窄栅极宽度的嵌入式MOSFET晶体管。 该方法还特别适用于在同一VLSI电路芯片上制造对称和非对称MOSFET器件。 嵌入式晶体管结构也用于制造NOR和NAND型“梯形”网络并且连接垂直和水平相邻的半导体器件。

公开(公告)号：US4677736A

公开(公告)日：1987-07-07

申请号：US853108

申请日：1986-04-17

申请人： Dale M. Brown

发明人： Dale M. Brown

IPC分类号： H01L21/266 ,  H01L21/336 ,  H01L29/78 ,  H01L21/283

CPC分类号： H01L29/66606 ,  H01L21/266 ,  H01L29/78 ,  Y10S438/945

摘要： A self-aligned process is described for depositing gate electrode material in an inlay field effect transistor. The process particularly provides means for inclusion of lightly doped source and drain extensions to minimize high field effects in the channel region. The process described herein is also particularly useful for providing source and drain contact metal which also acts as an ion implantation mask layer during several of the process steps. The method described herein is usable in conventional VLSI fabrication production facilities.

摘要翻译： 描述了用于在栅极场效应晶体管中沉积栅电极材料的自对准工艺。 该方法特别提供了用于包含轻掺杂的源极和漏极延伸部以最小化沟道区域中的高场效应的装置。 本文描述的方法对于提供在几个工艺步骤中也用作离子注入掩模层的源极和漏极接触金属也是特别有用的。 本文描述的方法可用于常规VLSI制造生产设备。

公开(公告)号：US5514604A

公开(公告)日：1996-05-07

申请号：US405618

申请日：1995-03-15

申请人： Dale M. Brown

发明人： Dale M. Brown

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L21/265 ,  H01L21/20

CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/1608 ,  Y10S438/931

摘要： A MOSFET includes a first SiC semiconductor contact layer, a SiC semiconductor channel layer supported by the first SiC contact layer, and a second SiC semiconductor contact layer supported by the channel layer. The second contact and channel layers are patterned to form a plurality of gate region grooves therethrough. Each of the gate region grooves includes a base surface and side surfaces which are covered with groove oxide material. A plurality of metal gate layers are provided, each being supported in a respective one of the plurality of grooves. A plurality of deposited oxide layers are provided, each in a respective one of the grooves so as to be supported by a respective one of the plurality of metal gate layers. A first metal contact layer is applied to the surface of the first SiC contact layer, and a second metal contact layer is applied to a portion of the surface of the second SiC contact layer.

摘要翻译： MOSFET包括第一SiC半导体接触层，由第一SiC接触层支撑的SiC半导体沟道层和由沟道层支撑的第二SiC半导体接触层。 图案化第二接触和沟道层以形成通过其中的多个栅极区沟槽。 每个栅极区域槽包括基面和被沟槽氧化物材料覆盖的侧表面。 设置多个金属栅极层，每个金属栅极层被支撑在多个槽中的相应一个槽中。 多个沉积的氧化物层分别设置在相应的一个槽中，以便被多个金属栅极层中的相应一个支撑。 将第一金属接触层施加到第一SiC接触层的表面，并且将第二金属接触层施加到第二SiC接触层的表面的一部分。

公开(公告)号：US5487266A

公开(公告)日：1996-01-30

申请号：US226528

申请日：1994-04-12

申请人： Dale M. Brown

发明人： Dale M. Brown

IPC分类号： G01J3/443 ,  F01D21/00 ,  F02C9/00 ,  F02C9/28 ,  F23N1/02 ,  F23N5/00 ,  F23N5/08 ,  F23R3/00 ,  F23R3/28 ,  G01N21/33

CPC分类号： F23N5/003 ,  F01D21/003 ,  F23N5/082 ,  F23N1/02 ,  F23N2041/20 ,  Y02T50/677

摘要： Combustion in a gas turbine is controlled through use of flame spectroscopy in order to achieve low NO.sub.x emissions in the exhaust. By detecting and monitoring the combustion flame in the turbine to determine intensity of ultraviolet spectral lines, and dynamically adjusting the fuel/air ratio of the fuel mixture such that this intensity remains below a predetermined level associated with a desired low level of NO.sub.x emissions, the engine produces significantly reduced NO.sub.x emissions in its exhaust but at a sufficiently high combustion flame temperature to avoid any undue risk of flame-out, thereby assuring stable, safe and reliable operation.

摘要翻译： 通过使用火焰光谱法来控制燃气轮机中的燃烧，以便在排气中实现低NOx排放。 通过检测和监测涡轮机中的燃烧火焰以确定紫外光谱线的强度，并且动态地调节燃料混合物的燃料/空气比，使得该强度保持低于与期望的低水平的NOx排放相关联的预定水平， 发动机在其排气中产生显着减少的NOx排放，但是在足够高的燃烧火焰温度下，以避免任何不适当的熄火风险，从而确保稳定，安全和可靠的操作。

公开(公告)号：US5059800A

公开(公告)日：1991-10-22

申请号：US687100

申请日：1991-04-19

申请人： Michael K. Cueman ,  Gregory A. Mohr ,  Dale M. Brown

发明人： Michael K. Cueman ,  Gregory A. Mohr ,  Dale M. Brown

IPC分类号： G01T1/20 ,  G01T1/202

CPC分类号： G01T1/202 ,  G01T1/2018

摘要： A two dimensional mosaic scintillation X-ray or Gamma ray detector has many mosaic elements. A reflecting means, e.g., an epoxy with TiO.sub.2, is disposed between the elements to reduce optical cross-talk. The elements have wide narrow ends and either the wide ends or the narrow ends can receive the incident X-rays. A photodetector is optically coupled to the remaining ends either by being directly secured thereto or by way of a lens or optical fibers. The detector has communicating wide and narrow grooves and can be made by first forming the wide grooves from a first side and then forming the narrow grooves from the second side.

摘要翻译： 二维马赛克闪烁X射线或伽马射线检测器具有许多镶嵌元件。 在这些元件之间设置反射装置，例如具有TiO 2的环氧树脂，以减少光学串扰。 这些元件具有宽的窄端，宽端或窄端可以接收入射的X射线。 光电检测器通过直接固定到其上或通过透镜或光纤光学耦合到剩余端。 检测器具有沟通的宽而窄的沟槽，并且可以通过首先从第一侧形成宽槽，然后从第二侧形成窄槽来制造。

公开(公告)号：US4981816A

公开(公告)日：1991-01-01

申请号：US445130

申请日：1989-11-30

申请人： Manjin J. Kim ,  Dale M. Brown

发明人： Manjin J. Kim ,  Dale M. Brown

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76855 ,  H01L21/28512 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S148/02

摘要： A metal for fabricating contact structures through via openings in VLSI circuits employs a dual layer of refractory metal. A thin titanium layer is deposited, over which a molybdenum layer is formed. An annealing treatment further improves contact resistance characteristics. The method results in a contact structure which exhibits desirable properties of thermal compatibility, step coverage, contact resistance and improved processing characteristics.

摘要翻译： 用于通过VLSI电路中的通孔开口制造接触结构的金属采用双层难熔金属。 沉积薄的钛层，在其上形成钼层。 退火处理进一步提高了接触电阻特性。 该方法产生显示出所需性质的热相容性，台阶覆盖率，接触电阻和改进的加工特性的接触结构。

公开(公告)号：US4412868A

公开(公告)日：1983-11-01

申请号：US333596

申请日：1981-12-23

申请人： Dale M. Brown ,  Kirby G. Vosburgh

发明人： Dale M. Brown ,  Kirby G. Vosburgh

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/26533 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76264 ,  H01L21/76294 ,  H01L21/76267 ,  H01L21/76283

摘要： A method of making an integrated circuit is described. The method includes providing a substrate of single crystal silicon semiconductor material having low minority carrier lifetime, forming an insulating layer of silicon dioxide overlying a major surface of the substrate, forming a plurality of apertures in the insulating layer which expose a plurality of selected portions of the major surface of the substrate, and epitaxially growing a layer of silicon on each of the selected portions of the major surfaces of the substrate.

摘要翻译： 描述制造集成电路的方法。 该方法包括提供具有低少数载流子寿命的单晶硅半导体材料的衬底，在衬底的主表面上形成覆盖二氧化硅的绝缘层，在绝缘层中形成多个孔，该多个孔暴露多个选定部分 衬底的主表面，并且在衬底的主表面的每个选定部分上外延生长一层硅层。

公开(公告)号：US4361600A

公开(公告)日：1982-11-30

申请号：US320255

申请日：1981-11-12

申请人： Dale M. Brown

发明人： Dale M. Brown

IPC分类号： H01L21/32 ,  H01L21/762 ,  H01L21/316 ,  H01L21/76

CPC分类号： H01L21/76264 ,  H01L21/32 ,  H01L21/76281 ,  Y10S148/085 ,  Y10S148/117

摘要： A method of forming in a substrate of monocrystalline silicon semiconductor material having a major surface, a plurality of islands of silicon each including an active region of the substrate adjacent the major surface and surrounded by a body of silicon dioxide separating the islands from the substrate is described.

摘要翻译： 在具有主表面的单晶硅半导体材料的衬底中形成多个硅岛，其方法包括邻近主表面的衬底的有源区并且被分离岛与衬底的二氧化硅体包围， 描述。

公开(公告)号：US07002156B2

公开(公告)日：2006-02-21

申请号：US10994980

申请日：2004-11-19

申请人： Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

发明人： Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

IPC分类号： G01J1/24

CPC分类号： H01L31/02322 ,  H01L31/02161 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/115

摘要： A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.

摘要翻译： 一种用于检测伽马射线的检测系统，包括用于接收至少一个伽马射线并产生至少一个紫外线的闪烁体晶体和用于检测紫外线的雪崩光电二极管。 雪崩光电二极管包括：具有第一掺杂剂的衬底; 具有位于所述基板顶部上的具有第二掺杂剂的第一层; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第一层之上; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第一层之上。 雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁。

公开(公告)号：US5578828A

公开(公告)日：1996-11-26

申请号：US339845

申请日：1994-11-15

申请人： Dale M. Brown ,  Gerald J. Michon

发明人： Dale M. Brown ,  Gerald J. Michon

IPC分类号： F01D21/00 ,  F23N5/08 ,  G01N21/72 ,  G01J1/42 ,  F02C9/28 ,  G01J5/10

CPC分类号： F23N5/08 ,  F01D21/003 ,  G01N21/72 ,  F23N2023/48 ,  F23N2029/22 ,  Y02T50/677

摘要： Intensity of optical emission from a combustion flame within a gas turbine combustor is monitored through an optical window in the combustor wall by a primary detector. Because the window is susceptible to becoming coated with deposits during combustor operation, compensation for presence of a coating is achieved by directing illumination from an optical signal source, such as a silicon carbide light-emitting diode, into the window for internal reflection at an optical interface defined by the combustion side surface. A compensation detector, such as a silicon carbide photodiode, detects intensity of the internally reflected illumination as an indicator of the window coating thickness. The compensation detector is located at a non-combustion side of the window, along with a reference detector that responds to intensity of optical signal source illumination reflected from the non-combustion side surface of the window. An AC coupled differential synchronous detector circuit processes the compensation detector and reference detector output signals to compensate the primary detector output signals for the coating.

摘要翻译： 燃气轮机燃烧器内的燃烧火焰的光发射强度通过主探测器通过燃烧器壁中的光学窗口进行监测。 因为窗口在燃烧器运行期间容易被沉积物涂覆，所以通过将来自诸如碳化硅发光二极管的光信号源的照明引导到用于内部反射的光学窗口中来实现对涂层的存在的补偿 接口由燃烧侧表面限定。 诸如碳化硅光电二极管的补偿检测器检测内部反射照明的强度作为窗口涂层厚度的指示。 补偿检测器位于窗口的非燃烧侧，以及响应于从窗口的非燃烧侧表面反射的光信号源照射的强度的参考检测器。 AC耦合差分同步检测器电路处理补偿检测器和参考检测器输出信号，以补偿涂层的主要检测器输出信号。