公开(公告)号：US20220059266A1

公开(公告)日：2022-02-24

申请号：US17438868

申请日：2020-03-12

Applicant: ROHM CO., LTD.

Inventor： Akihito SAITO ,  Isamu NISHIMURA ,  Yoshihiro SEKIMOTO

IPC: H01F5/06 ,  H01F5/00 ,  H01F41/04 ,  H01F41/12

Abstract: A coil module includes a conductor layer, at least one element, and a sealing resin. The conductor layer is formed along a predetermined plane and includes a wiring portion and a helical-shaped coil portion. The at least one element is mounted on the wiring portion. The sealing resin covers the conductor layer and the at least one element. The sealing resin is integrally formed of a single type of resin material and has a predetermined thickness in a first direction perpendicular to the plane.

公开(公告)号：US20170287624A1

公开(公告)日：2017-10-05

申请号：US15624205

申请日：2017-06-15

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495 ,  H01L23/64

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20160187433A1

公开(公告)日：2016-06-30

申请号：US14965312

申请日：2015-12-10

Applicant: ROHM CO., LTD.

Inventor： Isamu NISHIMURA ,  Yasuhiro FUWA

IPC: G01R33/06 ,  G01R33/00

CPC classification number: G01R33/063 ,  G01R33/0052 ,  G01R33/0354

Abstract: Provided is a magnetism detection device by which it is possible to achieve a reduction in size and an increase in accuracy. A magnetism detection device includes: a magneto-impedance element; a magnetic field direction changing body; and a substrate that is formed of a semiconductor material and has an element arrangement recessed portion bottom surface and a back surface that face mutually opposite sides in a thickness direction, and a through-hole that reaches the element arrangement recessed portion bottom surface and the back surface and has a cross-sectional dimension that increases toward the main surface starting from the element arrangement recessed portion bottom surface. The magneto-impedance element is mounted on the element arrangement recessed portion bottom surface, and the magnetic field direction changing body is accommodated in the through-hole.

Abstract translation: 提供一种能够实现尺寸减小和精度提高的磁检测装置。 磁检测装置包括：磁阻元件; 磁场方向变换体; 以及由半导体材料形成的基板，具有在厚度方向上彼此相对的两侧面的元件排列凹部底面和背面，以及到达元件排列凹部底面和背面的贯通孔 并且具有从元件布置凹部底面开始朝向主表面增大的横截面尺寸。 磁阻抗元件安装在元件布置凹部底面上，磁场方向改变体容纳在通孔中。

公开(公告)号：US20150137314A1

公开(公告)日：2015-05-21

申请号：US14537234

申请日：2014-11-10

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01L49/02 ,  H01L23/552 ,  H01F27/28 ,  H01L23/31

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Abstract translation: 本发明的半导体器件包括绝缘层，高压线圈和低压线圈，其在垂直方向上以间隔设置在绝缘层中;低电位部分设置在设置在低电压区域周围的低电压区域 高压线圈的平面图的高电压区域，并且与低于高压线圈的电位相连接;以及电场屏蔽部，其设置在高电压线圈与低电压区域之间，并且具有电浮极金属部件 。

公开(公告)号：US20140299990A1

公开(公告)日：2014-10-09

申请号：US14243245

申请日：2014-04-02

Applicant: ROHM CO., LTD.

Inventor： Satoshi KAGEYAMA ,  Isamu NISHIMURA

IPC: H01L23/00

CPC classification number: H01L24/45 ,  H01L23/3121 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/0382 ,  H01L2224/03906 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2924/181 ,  H01L2924/01204 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The semiconductor device of the present invention includes an insulating layer, a copper wiring for wire connection formed on the insulating layer, a shock absorbing layer formed on an upper surface of the copper wiring, the shock absorbing layer being made of a metallic material with a hardness higher than copper, a bonding layer formed on the shock absorbing layer, the bonding layer having a connection surface for a wire, and a side protecting layer covering a side surface of the copper wiring, wherein the side protecting layer has a thickness thinner than a distance from the upper surface of the copper wiring to the connection surface of the bonding layer.

Abstract translation: 本发明的半导体器件包括绝缘层，形成在绝缘层上的用于电线连接的铜布线，形成在铜布线的上表面上的减震层，该冲击吸收层由金属材料制成，具有 形成在冲击吸收层上的接合层，具有线的连接面的接合层和覆盖铜布的侧面的侧保护层，其中侧保护层的厚度比 从铜布线的上表面到接合层的连接表面的距离。

公开(公告)号：US20240234402A9

公开(公告)日：2024-07-11

申请号：US18404516

申请日：2024-01-04

Applicant: ROHM CO., LTD.

Inventor： Isamu NISHIMURA

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L25/18 ,  H01L23/5386 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08235 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48108 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/49175

Abstract: A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element including a first coil; a second coil magnetically coupled to the first coil; and a support substrate on which the first semiconductor element and the second semiconductor element are mounted. The support substrate includes an insulating base member, and a substrate wiring formed on the base member. The substrate wiring includes a first wiring member electrically interposed between the first semiconductor element and the first coil, and a second wiring member electrically interposed between the second semiconductor element and the second coil. The second coil is arranged between the first coil and the base member. The insulating element is supported by the support substrate.

公开(公告)号：US20240136347A1

公开(公告)日：2024-04-25

申请号：US18404516

申请日：2024-01-04

Applicant: ROHM CO., LTD.

Inventor： Isamu NISHIMURA

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L25/18 ,  H01L23/5386 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08235 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48108 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/49175

Abstract: A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element including a first coil; a second coil magnetically coupled to the first coil; and a support substrate on which the first semiconductor element and the second semiconductor element are mounted. The support substrate includes an insulating base member, and a substrate wiring formed on the base member. The substrate wiring includes a first wiring member electrically interposed between the first semiconductor element and the first coil, and a second wiring member electrically interposed between the second semiconductor element and the second coil. The second coil is arranged between the first coil and the base member. The insulating element is supported by the support substrate.

公开(公告)号：US20220352105A1

公开(公告)日：2022-11-03

申请号：US17765265

申请日：2020-09-29

Applicant: ROHM CO., LTD.

Inventor： Isamu NISHIMURA ,  Hiroyuki SHINKAI ,  Yoshihisa TAKADA ,  Hideaki YANAGIDA ,  Hirofumi TAKEDA

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L25/16

Abstract: A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.

公开(公告)号：US20210233700A1

公开(公告)日：2021-07-29

申请号：US17230356

申请日：2021-04-14

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/64 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20200176428A1

公开(公告)日：2020-06-04

申请号：US16695549

申请日：2019-11-26

Applicant: ROHM CO., LTD.

Inventor： Isamu NISHIMURA ,  Mamoru YAMAGAMI

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L49/02

Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.